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透明電極在有機(jī)太陽能電池中的優(yōu)化與研究

發(fā)布時間:2019-06-28 10:37
【摘要】:傳統(tǒng)半導(dǎo)體硅太陽能電池由于制備成本高昂且制備過程造成環(huán)境污染,促使科研人員把目光瞄準(zhǔn)有機(jī)太陽能電池(OSCs)領(lǐng)域。有機(jī)太陽能電池的原材料豐富、制備工藝簡單、卷對卷、可大面積制備等,與傳統(tǒng)的硅太陽能電池相比,有難以比擬的優(yōu)勢。但是,與無機(jī)太陽能電池相比,OSCs的光電轉(zhuǎn)化效率依然偏低。為了提高器件的光電轉(zhuǎn)化效率(PCE),通常把研究重點(diǎn)放在太陽能光子的吸收效率方面。一種方法是增加活性層的厚度。另外的解決辦法是通過制造一個半透明的OSCs器件和有不同光譜響應(yīng)的其他太陽能電池組裝。在此種情況下,我們可以最大化的利用入射的太陽光。同時,半透明的有機(jī)太陽能電池(OSCs)可以應(yīng)用于特定的生活化場景,例如具有光電轉(zhuǎn)化功能的窗戶等;诖讼敕,本文通過采用陰陽極都為透明電極的結(jié)構(gòu),制備高效的基于PTB7:PC_(70)BM結(jié)構(gòu)的半透明有機(jī)太陽能電池器件。本論文的主要研究內(nèi)容如下:1、為了制備出高效的有機(jī)太陽能電池,首先在玻璃基底上優(yōu)化銀透明電極的性能與制備參數(shù)之間的關(guān)系,包括:引入成核誘導(dǎo)物、采用鉭舟熱蒸發(fā)沉積薄膜、改變銀沉積速率以及銀薄膜的厚度。結(jié)果表面,通過引入成核誘導(dǎo)物MoO_3后,銀薄膜的導(dǎo)通臨界值從11 nm以上下降到7 nm,此時沉積速率為0.9 nm/s,對應(yīng)的表面電阻為39.41±8.51 ohm/sq。此外,隨著銀的沉積速率的逐漸增加,銀薄膜的光學(xué)和電學(xué)性能逐步趨于良好,當(dāng)蒸鍍速率達(dá)到0.7 nm/s以上,薄膜性能趨于穩(wěn)定,性能提升不大。當(dāng)銀薄膜的厚度達(dá)到9nm時,薄膜可見光波譜范圍內(nèi)(400-760nm)的平均透光率為74.22%±2%,高于其他薄膜厚度在此光波譜范圍內(nèi)的平均透光率,此時對應(yīng)的表面電阻為19.68±1.77ohm/sq。2、在半透明器件中,首先優(yōu)化透明陽極銀薄膜的厚度。結(jié)果表明,當(dāng)銀薄膜的厚度為9nm時,其光學(xué)和電學(xué)性質(zhì)達(dá)到最佳妥協(xié)結(jié)果。此時,光從銀透明電極入射時,效率可到2.76%(V_(oc)=0.72v,J_(sc)=7.47ma/cm~2,ff=51%,R_s=23.42Ω*cm~2,R_(sh)=873.40Ω*cm~2);光從ito入射時,效率可達(dá)3.94%(V_(oc)=0.74v,J_(sc)=8.67ma/cm~2,FF=62%,R_s=11.11Ω*cm~2,R_(sh)=904.65Ω*cm~2);光從銀薄膜電極入射的效率低于從ito入射的效率,這是由于二者的透光性不同導(dǎo)致的結(jié)果。3、為了進(jìn)一步改善薄膜的透射率,在透明電極的最外層覆蓋上不同厚度的MoO_3,形成MoO_3/ag/MoO_3多層結(jié)構(gòu)的透明電極,其中內(nèi)層較薄MoO_3(2nm)作為空穴緩沖層和成核誘導(dǎo)物,外層較厚MoO_3(≥10nm)作為光耦合層提高透明電極的透射。另外,電極最外層覆蓋一定厚度的MoO_3可避免超薄銀層的氧化,避免電極氧化導(dǎo)致器件效率的衰減。通過優(yōu)化9nm銀薄膜的PTB7:Pc_(70)bm電池器件,當(dāng)覆蓋層MoO_3的厚度為20nm時,器件的效率最優(yōu)。此時,光從MoO_3/ag/MoO_3多層結(jié)構(gòu)的透明電極入射時,效率可達(dá)3.62%(V_(oc)=0.73v,J_(sc)=8.00ma/cm~2,ff=62%,R_s=10.74Ω*cm~2,R_(sh)=1254.55Ω*cm~2);光從ito入射時,效率可達(dá)3.95%(V_(oc)=0.72v,J_(sc)=8.53ma/cm~2,FF=64%,R_s=10.20Ω*cm~2,R_(sh)=1246.11Ω*cm~2)。結(jié)果表明,用MoO_3/ag/MoO_3作透明電極應(yīng)用于器件中,有效的改善了器件的效率和穩(wěn)定性。
[Abstract]:In that traditional semiconductor silicon solar cell, due to the high preparation cost and environmental pollution caused by the preparation process, the scientific researcher is promote to aim at the field of organic solar cell (OSCs). The organic solar cell has the advantages of rich raw material, simple preparation process, volume-to-volume, large-area preparation and the like, and has the advantages of being difficult to compare with the traditional silicon solar cell. However, the photoelectric conversion efficiency of the OSCs is still low as compared to the inorganic solar cell. In order to improve the photoelectric conversion efficiency (PCE) of the device, the focus of the study is focused on the absorption efficiency of the solar photons. One method is to increase the thickness of the active layer. A further solution is by the manufacture of a semi-transparent osss device and other solar cell assemblies with different spectral responses. In this case, we can maximize the use of incident sunlight. At the same time, a translucent organic solar cell (OSCs) can be applied to a particular raw activation scene, such as a window with a photoelectric conversion function, and the like. Based on this idea, a transparent organic solar cell device based on PTB7: PC _ (70) BM is prepared by using the structure of both the anode and the cathode as the transparent electrode. The main research contents of this thesis are as follows:1. In order to prepare an efficient organic solar cell, the relationship between the performance of the silver transparent electrode and the preparation parameters is firstly optimized on the glass substrate, The silver deposition rate and the thickness of the silver film were varied. As a result, after the nucleation inducer MoO _ 3 was introduced, the conduction critical value of the silver film decreased from above 11 nm to 7 nm, at which time the deposition rate was 0.9 nm/ s and the corresponding surface resistance was 39.41 and 8.51 ohm/ sq. In addition, as the deposition rate of the silver gradually increases, the optical and electrical properties of the silver film tend to be good, and when the vapor deposition rate reaches above 0.7 nm/ s, the film performance is stable and the performance is not improved. when the thickness of the silver film reaches 9 nm, the average light transmittance of the thin film visible light spectrum range (400-760 nm) is 74.22% or 2%, and the average light transmittance of the other thin film thickness in the light wave spectrum range is higher than the average light transmittance of the other thin film thickness in the light wave spectrum range, and the corresponding surface resistance is 19.68-1.77 ohm/ sq.2, The thickness of the transparent anode silver film is first optimized. The results show that when the thickness of the silver film is 9 nm, the optical and electrical properties of the silver film reach the best compromise result. At this time, when the light is incident from the silver transparent electrode, the efficiency can be 2.76% (V _ (c) = 0.72v, J _ (sc) = 7.47ma/ cm ~ 2, ff = 51%, R _ s = 23.42 惟 * cm ~ 2, R _ (sh) = 873.40惟 * cm ~ 2); when the light is incident from the ito, the efficiency can reach 3.94% (V _ (c) = 0.74v, J _ (sc) = 8.67ma/ cm ~ 2, FF = 62%, R _ s = 11.11惟 * cm ~ 2, R _ (sh) = 904.65惟 * cm ~ 2); the efficiency of light incident from the silver thin-film electrode is lower than the efficiency from the ITO, in order to further improve the transmittance of the thin film, MoO _ 3 of different thickness is covered on the outermost layer of the transparent electrode to form a transparent electrode of the MoO _ 3/ ag/ MoO _ 3 multilayer structure, wherein the inner layer is thinner MoO _ 3 (2 nm) as a hole buffer layer and a nucleation inducer, The outer layer of thick MoO _ 3 (about 10 nm) is used as the light-coupling layer to improve the transmission of the transparent electrode. In addition, MoO _ 3 with a certain thickness on the outermost layer of the electrode can avoid the oxidation of the ultra-thin silver layer, and avoid the attenuation of the device efficiency due to the oxidation of the electrode. By optimizing the PTB7: Pc _ (70) bm cell device of the 9 nm silver film, the efficiency of the device is optimal when the thickness of the cover layer MoO _ 3 is 20 nm. At this time, the efficiency can reach 3.62% (V _ (c) = 0.73v, J _ (sc) = 8.00 ma/ cm ~ 2, ff = 62%, R _ s = 10.74惟 * cm ~ 2, R _ (sh) = 1254.55 惟 * cm ~ 2) when the transparent electrode of the MoO _ 3/ ag/ MoO _ 3 multi-layer structure is incident; when the light is incident from the ito, the efficiency can reach 3.95% (V _ (c) = 0.72v, J _ (sc) = 8.53 ma/ cm ~ 2, FF = 64%, R _ s = 10.20 惟 * cm ~ 2, R _ (sh) = 1246.11惟 * cm ~ 2). The results show that MoO _ 3/ ag/ MoO _ 3 is used as a transparent electrode to improve the efficiency and stability of the device.
【學(xué)位授予單位】:太原理工大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2017
【分類號】:TM914.4
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本文編號:2507233

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