發(fā)布時間：2019-01-27 21:11

【摘要】：隨著我國大力推進特高壓直流輸電工程建設,換流站閥廳作為交流系統(tǒng)和直流系統(tǒng)轉(zhuǎn)換的核心部位,對整個直流輸電系統(tǒng)的安全穩(wěn)定運行有著至關重要的作用,其內(nèi)部電磁場分布極其復雜,易出現(xiàn)設備尖端的電場畸變和電暈放電。因此,研究閥廳金具表面電場分布對換流站建設和閥廳設計具有重要的工程意義。本文以±800kV特高壓換流站閥廳金具為主要對象進行了如下研究:依據(jù)高端閥廳電氣設備的連接情況,搭建了閥廳3D實體模型,并進行了剖分處理;通過±800kV特高壓直流換流系統(tǒng)仿真模型獲得了一個工頻周期內(nèi)高端閥廳內(nèi)部金具的瞬態(tài)電位,將其作為加載條件;采用伽遼金邊界元法計算了±800kV特高壓換流站高端閥廳金具表面電場,該方法只需對金具表面進行合理的剖分處理,避免了三維模型的復雜剖分處理,剖分節(jié)點少且計算精度高。計算結果表明,在該設計方案下,閥廳金具表面場強最大位置出現(xiàn)在低壓端B相連接管母處,最大值為14.7kV/cm,低于起暈場強限值。仿真結果為閥廳及金具設計提供了參考依據(jù);通過±800kV特高壓直流輸電系統(tǒng)分層接入方式下的仿真模型,獲得了受端低端閥廳典型金具的電位分布;校核計算了傳統(tǒng)±800kV低端閥廳金具在分層接入電壓激勵下的表面電場分布;結合電場仿真結果,對低端閥廳內(nèi)電場分布惡劣的典型金具進行了結構優(yōu)化,并提出了一種適用于分層接入方式的±800kV閥廳金具設計方案,從而將閥廳金具表面電場強度控制在一個合理的水平。該計算結果為采用分層接入方式的特高壓直流工程設計和建設提供了數(shù)據(jù)支撐。
[Abstract]:With the development of UHVDC transmission project in China, as the core part of AC system and DC system conversion, the converter station valve hall plays an important role in the safe and stable operation of the whole HVDC transmission system. The distribution of electromagnetic field is very complex and the electric field distortion and corona discharge at the tip of the equipment are easy to occur. Therefore, it is of great engineering significance to study the electric field distribution on the surface of valve hall fittings for converter station construction and valve hall design. The main research object of this paper is as follows: according to the connection of the electrical equipment of the high-end valve hall, the 3D solid model of the valve hall is built and divided; Through the simulation model of 鹵800kV UHV DC converter system, the transient potential of the internal hardware of the high-end valve hall in a power frequency cycle is obtained, which is regarded as the loading condition. Galerkin boundary element method is used to calculate the electric field on the surface of the high end valve hall of 鹵800kV UHV converter station. This method only needs to carry out reasonable dissection on the surface of the fittings, thus avoiding the complicated dividing treatment of the 3D model, with less nodes and higher calculation accuracy. The calculation results show that the maximum position of the surface field strength of the valve hall fittings appears at the bottom of the B phase connecting pipe at the low pressure end, and the maximum value is 14.7 kV / cm, which is lower than the limit value of the halo field strength. The simulation results provide a reference for the design of valve halls and fittings, and through the simulation model of 鹵800kV UHV HVDC transmission system layered access mode, the potential distribution of typical hardware at the lower end of the receiving end is obtained. The surface electric field distribution of traditional 鹵800kV low-end valve hall hardware under the excitation of layered access voltage is calculated. Based on the results of electric field simulation, the structure of typical hardware with bad electric field distribution in low-end valve hall is optimized, and a 鹵800kV valve hall hardware design scheme suitable for layered access mode is proposed. Thus, the electric field intensity on the surface of valve hall fittings is controlled at a reasonable level. The results provide data support for the design and construction of UHV DC engineering with layered access.
【學位授予單位】：東北電力大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TM721.1

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本文編號：2416703