【摘要】：柔性直流輸電是堅(jiān)強(qiáng)智能電網(wǎng)的核心裝備,與傳統(tǒng)直流輸電相比,柔性直流輸電在孤島供電、城市配電網(wǎng)的增容改造、交流系統(tǒng)互聯(lián)、大規(guī)模風(fēng)電場并網(wǎng)等方面具有明顯技術(shù)優(yōu)勢,是我國大電網(wǎng)發(fā)展格局的戰(zhàn)略選擇。目前最受關(guān)注的柔性直流輸電拓?fù)錇槟K化多電平換流器(Modular Multilevel Converter,MMC),該拓?fù)鋼Q流閥中的核心設(shè)備是MMC子模塊。因此,針對MMC子模塊的寬頻建模和瞬態(tài)分析有著重要意義。本文針對工程用MMC子模塊,首先搭建了子模塊的瞬態(tài)特性測試平臺,該平臺可對MMC子模塊進(jìn)行不同電壓電流和開關(guān)時(shí)間下的動(dòng)態(tài)特性測試,從而得到了多種工況下的動(dòng)態(tài)特性曲線。然后針對子模塊內(nèi)部的各種元器件,分別搭建了詳細(xì)的電路仿真模型。包括高壓IGBT器件的解析模型,快速續(xù)流二極管的行為模型和旁路晶閘管的截止?fàn)顟B(tài)模型。同時(shí)針對測試回路整體和局部的雜散電感進(jìn)行了提取。最后,通過對兩種不同電壓功率等級的IGBT模塊的試驗(yàn)和仿真,驗(yàn)證了模型和參數(shù)提取的正確性,并且針對有無旁路晶閘管時(shí)的子模塊瞬態(tài)特性進(jìn)行了測試仿真,并從機(jī)理上解釋了晶閘管如何影響開關(guān)過程,以及其對子模塊總體損耗的影響。本文提取了MMC子模塊的核心器件參數(shù)及回路雜散參數(shù),建立了子模塊的寬頻模型,對于后續(xù)子模塊不同工況損耗計(jì)算,子模塊的優(yōu)化設(shè)計(jì)和子模塊電磁騷擾分析有著巨大幫助。
[Abstract]:Flexible direct current transmission is the core equipment of strong smart grid. Compared with traditional direct current transmission, flexible direct current transmission supplies power in isolated islands, increases the capacity of urban distribution network, and interconnects the AC system. The large scale wind farm has obvious technical advantages and is the strategic choice of the development pattern of large power grid in China. At present, the most concerned flexible DC transmission topology is modularized multilevel converter (Modular Multilevel Converter,MMC). The core device in this topology converter valve is the MMC submodule. Therefore, broadband modeling and transient analysis for MMC submodules are of great significance. In this paper, the transient characteristic test platform of the submodule is built for the engineering MMC submodule. The platform can test the dynamic characteristics of the MMC submodule under different voltage, current and switching time. The dynamic characteristic curves under various working conditions are obtained. Then the detailed circuit simulation model is built for various components in the sub-module. It includes the analytical model of high voltage IGBT device, the behavior model of fast recurrent diode and the cutoff state model of bypass thyristor. At the same time, the whole and local stray inductors of the test circuit are extracted. Finally, two kinds of IGBT modules with different voltage power levels are tested and simulated to verify the correctness of the model and parameter extraction, and the transient characteristics of sub-modules with or without bypass thyristors are tested and simulated. It also explains how the thyristor affects the switching process and how it affects the overall loss of the sub-module. In this paper, the core device parameters and the stray loop parameters of the MMC submodule are extracted, and the broadband model of the sub-module is established, which is of great help to the calculation of the loss under different working conditions, the optimization design of the sub-module and the analysis of the electromagnetic disturbance of the sub-module.
【學(xué)位授予單位】：華北電力大學(xué)(北京)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TM721.1;TM46

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相關(guān)期刊論文 前10條

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本文編號：2407705