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微晶硅鍺太陽(yáng)電池的仿真與優(yōu)化

發(fā)布時(shí)間:2018-06-17 02:41

  本文選題:光伏發(fā)電 + 微晶硅鍺薄膜 ; 參考:《東北電力大學(xué)》2017年碩士論文


【摘要】:現(xiàn)如今,電力系統(tǒng)中的主要光伏電源是晶體硅太陽(yáng)電池。由于晶體硅太陽(yáng)電池在繼續(xù)提高轉(zhuǎn)換效率和降低成本方面都遇到了困難,這使其上網(wǎng)電價(jià)遠(yuǎn)高于傳統(tǒng)能源的上網(wǎng)電價(jià)。相比之下,硅基薄膜太陽(yáng)電池具有成本低,弱光響應(yīng)好等優(yōu)點(diǎn),將其用于光伏發(fā)電有望進(jìn)一步節(jié)省成本,降低光伏并網(wǎng)電價(jià)。目前,影響其競(jìng)爭(zhēng)力的主要因素是轉(zhuǎn)換效率較低。微晶硅鍺是近幾年被提出應(yīng)用于薄膜太陽(yáng)電池中的新型窄帶隙材料,具有吸收系數(shù)高,紅外光響應(yīng)好等特點(diǎn),將其應(yīng)用于疊層硅基薄膜太陽(yáng)電池的底電池中,可以有效提高電池的光電轉(zhuǎn)換效率。本文采用計(jì)算機(jī)仿真的方式對(duì)微晶硅鍺太陽(yáng)電池進(jìn)行研究,通過(guò)新結(jié)構(gòu)的提出以優(yōu)化其光電性能。首先,應(yīng)用太陽(yáng)電池仿真軟件wxAMPS建立并優(yōu)化了本征層具有漸變帶隙結(jié)構(gòu)的微晶硅鍺太陽(yáng)電池,與具有相同鍺含量非漸變電池相比,其轉(zhuǎn)換效率提高了36%。并且在傳統(tǒng)線性漸變結(jié)構(gòu)的基礎(chǔ)上,優(yōu)化出了一種沿曲線漸變的新型電池結(jié)構(gòu),使得優(yōu)化后的曲線漸變微晶硅鍺太陽(yáng)電池轉(zhuǎn)換效率達(dá)到13.82%。然后,在微晶硅鍺太陽(yáng)電池的p/i界面添加了非晶硅鍺緩沖層,并從鍺含量和厚度兩個(gè)方面對(duì)緩沖層進(jìn)行優(yōu)化,使電池的短路電流和開(kāi)路電壓進(jìn)一步得到提高,轉(zhuǎn)換效率提升4.5%。最后,建立了非晶硅/非晶硅鍺/微晶硅/微晶硅鍺四結(jié)疊層太陽(yáng)電池,并將優(yōu)化后的曲線漸變微晶硅鍺電池用于四結(jié)電池的底電池,使得疊層電池的轉(zhuǎn)換效率達(dá)24.8%。同具有相同鍺含量的非漸變微晶硅鍺電池以及微晶硅電池作為底電池時(shí)相比,四結(jié)電池的效率分別提高8.7%和16.7%。研究結(jié)果顯示了微晶硅鍺在硅基薄膜太陽(yáng)電池中的應(yīng)用潛力。
[Abstract]:Nowadays, the main photovoltaic power in the power system is crystal silicon solar cell. Because of the difficulty in improving the conversion efficiency and reducing the cost, the crystal silicon solar cell is much more expensive than the traditional energy. In contrast, the silicon based thin film solar cell has a low cost and a good weak light response. At present, the main factor affecting its competitiveness is the low conversion efficiency. Microcrystalline silicon germanium is a new type of narrow gap material used in thin film solar cells in recent years, which has the characteristics of high absorption system and good response to infrared light, and applied it to superposition. In the bottom cell of the layer silicon based thin film solar cell, the photoelectric conversion efficiency of the battery can be effectively improved. In this paper, the microcrystalline silicon germanium solar cell is studied by computer simulation, and the photoelectric performance is optimized by the new structure. First, the application of the solar cell simulation soft wxAMPS is used to establish and optimize the eigenlayer with the tapered zone. The microcrystalline silicon germanium solar cell with the gap structure has improved the conversion efficiency by 36%. compared with the non graded cell with the same germanium content. On the basis of the traditional linear gradient structure, a new type of battery structure along the curve gradient is optimized, which makes the conversion efficiency of the optimized curve gradient microcrystalline silicon germanium solar cell reach 13.82%. and then, The amorphous silicon germanium buffer layer was added to the p/i interface of the microcrystalline silicon germanium solar cell, and the buffer layer was optimized from two aspects of the germanium content and thickness. The short circuit current and the open circuit voltage of the battery were further improved and the conversion efficiency was enhanced by 4.5%.. Finally, the amorphous silicon / amorphous silicon germanium / microcrystalline silicon / microcrystalline silicon germanium and four layers of laminated solar electricity were established. The optimized curve gradient microcrystalline silicon germanium battery is used in the bottom battery of four junction batteries, which makes the conversion efficiency of the laminated battery up to 24.8%. and the non graded microcrystalline silicon germanium battery with the same germanium content as well as the microcrystalline silicon battery as the bottom battery. The efficiency of the four junction battery increases by 8.7% and the 16.7%. study results show microcrystalline. Application potential of SiGe in silicon based thin film solar cells.
【學(xué)位授予單位】:東北電力大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2017
【分類號(hào)】:TM914.4

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