本文選題：直流斷路器 + SiC-MOSFET　； 參考：《華北電力大學(xué)》2017年碩士論文

【摘要】：低壓直流斷路器(LVDC breaker,low voltage direct current breaker)的作用是在低壓直流電路發(fā)生故障、過載或不正常運(yùn)行時(shí)斷開電路。低壓直流斷路器主要應(yīng)用于低壓直流配電網(wǎng)中,近年來,隨著科技的不斷發(fā)展,直流配電可以帶來更高的電能質(zhì)量,使得直流的應(yīng)用范圍更加廣泛,而直流斷路器是支撐直流配電網(wǎng)安全穩(wěn)定運(yùn)行的關(guān)鍵部分,因此直流斷路器一直是近幾年的研究熱點(diǎn)。近些年直流斷路器的性能已逼近Si材料的極限,若要研制出性能更優(yōu)越的斷路器則需要采用新的半導(dǎo)體材料,隨著近幾年碳化硅材料研究的不斷成熟,其具有低導(dǎo)通損耗、耐高溫、高頻和開斷速度快等優(yōu)點(diǎn),將其與硅MOSFET和IGBT比較后發(fā)現(xiàn),碳化硅MOSFET特別適合作為開關(guān)元件用于直流斷路器中。本文的主要工作是研究擊穿電壓為1.2k V的碳化硅MOSFET用于500V直流斷路器的可行性,并在此基礎(chǔ)上嘗試樣機(jī)試制。論文首先介紹了直流斷路器的研究背景和研究現(xiàn)狀,以及碳化硅MOSFET優(yōu)異的性能;其次介紹了當(dāng)前三大主流直流斷路器的工作原理及其優(yōu)缺點(diǎn);然后從材料屬性、直流電壓等級(jí)、絕緣和用電安全等多角度來確定本文設(shè)計(jì)的斷路器的工作電壓500V;接著詳細(xì)介紹了SiC-MOSFET開通和關(guān)斷過程中的電路特性,以及用Saber軟件實(shí)現(xiàn)SiC-MOSFET建模的具體過程;接著搭建了簡易低壓直流電路模型,并估算模型中各元件的參數(shù);然后利用該模型分析了碳化硅MOSFET在開斷電路正常工作和故障時(shí)的過電壓大小,并在此基礎(chǔ)上設(shè)計(jì)了二種過電壓保護(hù)電路保證SiC-MOSFET的安全可靠工作,并對二種過電壓保護(hù)電路優(yōu)缺點(diǎn)進(jìn)行比較;最后完成斷路器中主電路、過電壓保護(hù)電路、電流檢測電路、控制電路和驅(qū)動(dòng)電路五個(gè)部分的設(shè)計(jì),然后依據(jù)電路圖完成樣機(jī)的試制。本文設(shè)計(jì)的斷路器開斷容量較小,體積較大,通過后續(xù)的不斷改進(jìn)和完善有望實(shí)現(xiàn)該斷路器在實(shí)際生活中的應(yīng)用。
[Abstract]:The function of LVDC breaker voltage direct current breaker) is to disconnect the circuit when the low voltage DC circuit has a fault, overload or abnormal operation. Low-voltage DC circuit breakers are mainly used in low-voltage DC distribution networks. In recent years, with the continuous development of science and technology, DC distribution can bring higher power quality, making DC applications more extensive. DC circuit breaker is the key part to support the safe and stable operation of DC distribution network, so DC circuit breaker has been the research hotspot in recent years. In recent years, the performance of DC circuit breaker has approached the limit of Si material. If we want to develop the circuit breaker with better performance, we need to adopt new semiconductor material. With the development of silicon carbide material in recent years, it has low conduction loss. Compared with silicon MOSFET and IGBT, silicon carbide MOSFET is particularly suitable for DC circuit breakers. The main work of this paper is to study the feasibility of using silicon carbide MOSFET with a breakdown voltage of 1.2 kV for 500V DC circuit breakers. This paper first introduces the research background and research status of DC circuit breaker, and the excellent performance of silicon carbide MOSFET; secondly, introduces the working principle, advantages and disadvantages of the three main current DC circuit breakers; and then from the material properties, DC voltage grade, The working voltage of the circuit breaker designed in this paper is determined from many angles, such as insulation and power safety, then the circuit characteristics in the process of SiC-MOSFET turn-on and turn-off are introduced in detail, and the concrete process of modeling SiC-MOSFET with Saber software is introduced in detail. Then a simple low-voltage DC circuit model is built, and the parameters of each component in the model are estimated, and then the overvoltage of silicon carbide MOSFET during the normal operation and failure of the circuit is analyzed. On this basis, two kinds of overvoltage protection circuits are designed to ensure the safety and reliability of SiC-MOSFET, and the advantages and disadvantages of the two overvoltage protection circuits are compared. Finally, the main circuit of circuit breaker, over-voltage protection circuit and current detection circuit are completed. Control circuit and drive circuit design of five parts, and then according to circuit diagram to complete the prototype trial production. The circuit breaker designed in this paper has a small breaking capacity and a large volume. It is expected that the circuit breaker will be used in real life through continuous improvement and improvement.
【學(xué)位授予單位】：華北電力大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TM561

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本文編號(hào)：1930579