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  本文選題：氧化鋅 + β輻射伏特效應(yīng)　； 參考：《吉林大學(xué)》2017年碩士論文

【摘要】：ZnO是材料學(xué)研究的熱點(diǎn)之一,它是一種寬禁帶半導(dǎo)體材料,具有高的擊穿強(qiáng)度、飽和漂移速度以及極強(qiáng)的抗輻射性能,在高速器件和空間器件方面具有應(yīng)用潛能。本文匯總了ZnO的n型及p型摻雜研究進(jìn)展情況,使用ZnO作為β輻射伏特效應(yīng)核電池?fù)Q能材料,~(63)Ni及~(147)Pm作為β源,利用MCNP5程序進(jìn)行模擬計(jì)算,獲得了ZnO基β輻射伏特效應(yīng)核電池的理論電學(xué)特性數(shù)據(jù),計(jì)算結(jié)果可為進(jìn)一步優(yōu)化電學(xué)性能提供依據(jù)。本文主要研究以下內(nèi)容:1.對單能電子在材料中的的輸運(yùn)情況進(jìn)行研究,模擬單能準(zhǔn)直電子、4π電子在換能材料ZnO、電極材料Al、Ag、Cu、Au中,定義能量減少為入射能量的1/10時的射程R1和能量減少為入射能量的1/100時的射程R2分別作為耗盡層寬度的參考值和防護(hù)材料厚度參考值,尋找兩種射程與模擬材料特性參數(shù)的關(guān)系,并與較常用的電子射程經(jīng)驗(yàn)公式進(jìn)行比較,間接證明兩種射程模擬的可靠性,為換能材料及防護(hù)材料的厚度選擇提供依據(jù)。2.研究單能電子在換能材料和電極材料中的反散射問題,包括兩部分:一是在換能材料中,電子束能量確定,反散射情況隨入射角度的變化關(guān)系;二是在換能材料和電極材料中,給定入射角度(垂直于材料表面),反散射情況與入射電子能量的變化關(guān)系。由于反散射過程的實(shí)質(zhì)是入射電子與靶物質(zhì)原子核庫侖場的相互作用,可得出反散射率與材料等效原子序數(shù)呈正相關(guān)。3.研究單能電子在換能材料和電極材料中的能量沉積情況,包括不同能量段的電子在換能材料ZnO中的能量沉積情況,以及20 ke V和60 ke V電子在不同材料中的能量沉積情況。由于放射源出射能譜可看做疊加的多種單能電子,此結(jié)果對于放射源的能量沉積區(qū)域的確定具有指導(dǎo)意義。4.模擬計(jì)算不同活度的~(63)Ni及~(147)Pm放射源自吸收情況,通過自吸收率與表面出射活度的比較選取合適活度的放射源。對于100%純度的~(63)Ni放射源,選取總活度為0.02231 Ci;對于100%純度的~(147)Pm源,選取總活度為3.34965 Ci。5.使用P區(qū)摻雜濃度為1.45×10~(18) cm~(-3),N區(qū)摻雜濃度為1.97×1020 cm~(-3)的ZnO同質(zhì)PN結(jié),內(nèi)建電場為1.58 V,耗盡層寬度為32.6μm,短路電流為:~(63)Ni源為0.00391μA,~(147)Pm源為26.18μA;填充因子均為91.74%,最大輸出功率分別為0.0567μW和37.95μW,轉(zhuǎn)化效率分別為4.12%和4.59%。6.選取ND在2×10~(18)~1×10~(23) cm~(-3)之間,NA在1×10~(18)~1×1020 cm~(-3)的ZnO薄膜,初步討論了摻雜濃度與內(nèi)建電勢和耗盡層寬度的關(guān)系。為更好地與~(63)Ni源能量沉積區(qū)(約6μm)匹配,可對摻雜濃度進(jìn)一步優(yōu)化:p區(qū)摻雜濃度應(yīng)大于5×1019 cm~(-3),n區(qū)摻雜濃度不需過大。
[Abstract]:ZnO is one of the hot research fields in materials science. It is a wide band gap semiconductor material with high breakdown strength, high saturation drift velocity and strong radiation resistance. It has potential applications in high speed devices and space devices. In this paper, the research progress of n-type and p-type doping of ZnO is summarized. Using ZnO as the transfer materials of 尾 -radiative Voltage-effecting nuclear cell, and Pm as 尾 source, the simulation calculation is carried out by using MCNP5 program. The theoretical data of electrical properties of ZnO based 尾 -radiation effect nuclear cells are obtained. The calculated results can provide a basis for further optimization of electrical performance. This paper mainly studies the following contents: 1. The transport of single energy electrons in materials is studied. The range R 1 when the energy is reduced to 1 / 10 of the incident energy and the range R2 when the energy is reduced to 1 / 100 of the incident energy are used as the reference values of the depletion layer width and the thickness of the protective material, respectively. The relationship between the two kinds of range and the characteristic parameters of simulated materials is found, and compared with the empirical formula of electronic range, the reliability of the simulation of the two ranges is proved indirectly, which provides a basis for the thickness selection of the energy transfer material and the protective material. In this paper, the inverse scattering of single energy electrons in energy transfer materials and electrode materials is studied, which includes two parts: one is that the energy of the electron beam is determined in the transfer materials, the other is the relationship between the backscattering and the incident angle, and the second is in the energy transfer materials and the electrode materials. The relation between the incident angle (perpendicular to the surface of the material) and the incident electron energy is obtained. Since the essence of the backscattering process is the interaction between the incident electron and the Coulomb field of the target nucleus, it can be concluded that the backscattering rate is positively correlated with the equivalent atomic number of the material. The energy deposition of single energy electrons in energy transfer materials and electrode materials was studied, including the energy deposition of electrons of different energy segments in ZnO, and the energy deposition of 20ke V and 60ke V electrons in different materials. Since the emission spectra of radioactive sources can be regarded as superimposed single energy electrons, this result is of guiding significance for the determination of energy deposition regions of radioactive sources. The self-absorption of the radioactive sources with different activities, such as Ni and 147Pm, was simulated, and the suitable radioactive sources were selected by comparing the self-absorption rate with the surface exhalation activity. The total activity was 0.02231 Cii for the 100% pure Ni source and 3.34965 Ci.5for the 100% pure Pm source. ZnO homogenous PN junctions with P doping concentration of 1.45 脳 10 ~ (18) cm ~ (3) and N ~ (1. 97 脳 1020 cm ~ (-1) ~ (-1) were used. The internal electric field is 1.58 V, the width of depletion layer is 32.6 渭 m, the short-circuit current is 0.00391 渭 A ~ (63) Ni source is 0.00391 渭 A, the filling factor is 91.74 渭 A, the maximum output power is 0.0567 渭 W and 37.95 渭 W, and the conversion efficiency is 4.12% and 4.59 路6, respectively. The ZnO films with ND between 2 脳 10 ~ (18) ~ 1 脳 10 ~ (3) cm ~ (-3) and na ~ (1 脳 10 ~ (18) ~ (18) ~ (1 脳 1020) cm ~ (-3) were selected. The relationship between the doping concentration and the potential and the width of the depletion layer was preliminarily discussed. In order to better match with the energy deposition area (about 6 渭 m) of the Ni source, the doping concentration in the w ~ p region should be more than 5 脳 1019 cm ~ (-1) ~ (-3) ~ (-1), and the doping concentration should not be too large.
【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TM918

【參考文獻(xiàn)】

相關(guān)期刊論文 前6條

1 湯曉斌;劉云鵬;丁丁;陳達(dá);;GaN基β輻射伏特效應(yīng)微電池的優(yōu)化設(shè)計(jì)研究[J];中國科學(xué):技術(shù)科學(xué);2012年04期

2 ;Optimization design of GaN betavoltaic microbattery[J];Science China(Technological Sciences);2012年03期

3 羅順忠;王關(guān)全;張華明;;輻射伏特效應(yīng)同位素電池研究進(jìn)展[J];同位素;2011年01期

4 王關(guān)全;張華明;羅順忠;胡睿;高暉;楊玉青;魏洪源;宋宏濤;;半導(dǎo)體器件在輻射作用下的電學(xué)輸出性能[J];同位素;2008年04期

5 賀永寧;朱長純;侯洵;;ZnO寬帶隙半導(dǎo)體及其基本特性[J];功能材料與器件學(xué)報;2008年03期

6 楊麗萍;劉鋒; 韓煥鵬;;氧化鋅材料的研究與進(jìn)展[J];微納電子技術(shù);2007年02期

相關(guān)碩士學(xué)位論文 前2條

1 石彥強(qiáng);4H-SiC PiN結(jié)同位素電池的研究[D];西安電子科技大學(xué);2011年

2 楊康;GaN-~(147)Pm型β輻射伏特效應(yīng)核電池的粒子輸運(yùn)研究及優(yōu)化設(shè)計(jì)[D];吉林大學(xué);2013年

，

本文編號：1898071