發(fā)布時(shí)間：2018-04-16 16:38

  本文選題：串聯(lián)功率半導(dǎo)體 + 瞬態(tài)電壓平衡�。� 參考：《哈爾濱工業(yè)大學(xué)》2017年碩士論文

【摘要】：在能源危機(jī)日益嚴(yán)重的今天,交流輸電網(wǎng)絡(luò)已經(jīng)不能滿足電力輸送的要求,因此高壓直流輸電技術(shù)蓬勃發(fā)展。高壓直流斷路器作為直流輸電的核心部件備受關(guān)注。高壓直流斷路器由串聯(lián)半導(dǎo)體構(gòu)成,在半導(dǎo)體開通關(guān)斷過程中半導(dǎo)體之間容易出現(xiàn)電壓不平衡。本課題研究串聯(lián)功率半導(dǎo)體開關(guān)瞬態(tài)均壓技術(shù)。本文分析了功率半導(dǎo)體的開關(guān)過程,串聯(lián)功率半導(dǎo)體的瞬態(tài)可靠性,無源均壓技術(shù)對串聯(lián)功率半導(dǎo)體的瞬態(tài)均壓的作用,針對串聯(lián)半導(dǎo)體的控制所需的輔助電源進(jìn)行了設(shè)計(jì),為解決串聯(lián)半導(dǎo)體的瞬態(tài)電壓不平衡設(shè)計(jì)了有源控制方法,實(shí)現(xiàn)了可以保證串聯(lián)功率半導(dǎo)體開關(guān)瞬態(tài)電壓平衡的低壓等效模型。為分析串聯(lián)半導(dǎo)體開關(guān)瞬態(tài)可靠性,研究了功率半導(dǎo)體的微觀等效模型,建立了串聯(lián)MOSFET微觀等效電路的轉(zhuǎn)移狀態(tài)矩陣,使用轉(zhuǎn)移狀態(tài)矩陣特征根判定的方法,對串聯(lián)MOSFET的開關(guān)可靠性進(jìn)行觀測,并選取合適的門極電阻。以MOSFET 20N60為例進(jìn)行了計(jì)算。同時(shí)分析串聯(lián)半導(dǎo)體無源均壓的原理,研究設(shè)計(jì)了無源均壓電路參數(shù)設(shè)計(jì)方法與無源均壓電路對系統(tǒng)的影響,實(shí)驗(yàn)驗(yàn)證了無源均壓電路抑制瞬態(tài)過電壓的效果。針對串聯(lián)功率半導(dǎo)體門極供電需求,設(shè)計(jì)了一個(gè)具有多路輸出能力,有隔離高電壓能力的輔助電源,輔助源包括前級70 k Hz逆變器和后級5 V輸出的穩(wěn)壓電路。為保證輸出正弦波形,針對逆變器的濾波網(wǎng)絡(luò)進(jìn)行了分析,選擇了兩級Г型濾波網(wǎng)絡(luò),并進(jìn)行推導(dǎo)計(jì)算。為了保證開關(guān)過程中的瞬態(tài)均壓,分析了瞬態(tài)電壓不平衡的原因。設(shè)計(jì)了開關(guān)狀態(tài)高速采樣電路,開關(guān)控制程序,使用狀態(tài)機(jī)的方法,結(jié)合FPGA的高速特性,產(chǎn)生相對延遲的控制信號來消除誤差,最終實(shí)現(xiàn)了串聯(lián)開關(guān)管的瞬態(tài)均壓,在實(shí)驗(yàn)平臺上實(shí)現(xiàn)了1000 V耐壓100 ns開通的串聯(lián)半導(dǎo)體低壓等效模型。實(shí)驗(yàn)結(jié)果表明,本課題所設(shè)計(jì)的均壓策略可保證開關(guān)管電壓瞬態(tài)平衡。
[Abstract]:With the increasingly serious energy crisis, the AC transmission network has been unable to meet the requirements of power transmission, so HVDC technology is booming.As the core components of HVDC transmission, HVDC circuit breakers have attracted much attention.High voltage DC circuit breaker is composed of series semiconductor.In this paper, the transient voltage sharing technology of series power semiconductor switch is studied.In this paper, the switching process of power semiconductors, the transient reliability of series power semiconductors and the effect of passive voltage sharing technology on the transient voltage equalization of series power semiconductors are analyzed. The auxiliary power supply for the control of series semiconductors is designed.In order to solve the transient voltage imbalance of series semiconductor, an active control method is designed, and a low-voltage equivalent model is implemented to guarantee the transient voltage balance of series power semiconductor switch.In order to analyze the transient reliability of series semiconductor switch, the microscopic equivalent model of power semiconductor is studied, and the transfer state matrix of series MOSFET microcosmic equivalent circuit is established. The method of determining the eigenvalue of the transfer state matrix is used.The switching reliability of series MOSFET is observed and the appropriate gate resistance is selected.Taking MOSFET 20N60 as an example, the calculation is carried out.At the same time, the principle of passive voltage sharing in series semiconductor is analyzed, the parameter design method of passive voltage sharing circuit and the influence of passive voltage sharing circuit on the system are studied, and the effect of passive voltage sharing circuit on suppressing transient overvoltage is verified by experiments.In order to meet the demand of series power semiconductor gate power supply, an auxiliary power supply with multiple output capacity and isolation high voltage capability is designed. The auxiliary source includes a 70 kHz inverter with a front stage and a stable circuit with a 5 V output from the rear stage.In order to guarantee the output sinusoidal shape, the filter network of inverter is analyzed, and the two-stage filter network is selected and calculated.In order to ensure the transient voltage balance in the switching process, the cause of the transient voltage imbalance is analyzed.The switching state high-speed sampling circuit, switching control program, using state machine method and combining the high speed characteristic of FPGA are designed to produce the relative delay control signal to eliminate the error. Finally, the transient voltage equalization of the series switch tube is realized.A low voltage equivalent model of 1000 V and 100ns open series semiconductor is realized on the experimental platform.The experimental results show that the voltage balancing strategy designed in this paper can guarantee the transient voltage balance of the switch tube.
【學(xué)位授予單位】：哈爾濱工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TM46;TM561

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