發(fā)布時間：2018-04-12 13:48

  本文選題：鈣鈦礦太陽能電池 + 成膜工藝　； 參考：《深圳大學(xué)》2017年碩士論文

【摘要】：有機(jī)-無機(jī)鹵化物鈣鈦礦太陽能電池具有低成本、制備工藝簡單、高效率等特點(diǎn),在最近的幾年時間里得到廣泛的研究與快速的發(fā)展,目前光電轉(zhuǎn)換效率已經(jīng)突破22%。器件能量轉(zhuǎn)換效率的快速攀升,本質(zhì)上是鈣鈦礦薄膜質(zhì)量不斷提高和器件結(jié)構(gòu)持續(xù)優(yōu)化的結(jié)果。本文使用倒裝p-i-n平面異質(zhì)結(jié)結(jié)構(gòu)為模型(如圖1-14所示),分別探索空穴傳輸層、鈣鈦礦薄膜和電子傳輸層的制備工藝,期望調(diào)控各功能層的結(jié)構(gòu)屬性,提高器件光伏性能。主要內(nèi)容具體如下:1、改進(jìn)MAPb I3在空氣環(huán)境下的制備工藝。通過在烘烤過程增加DMSO的溶劑氛圍,并系統(tǒng)研究DMSO氛圍的濃度、DMSO氛圍退火時間長度與時間點(diǎn)對成膜質(zhì)量的影響。結(jié)果表明:在晶體生長的前10分鐘使用1.5 mg/cm3 DMSO氛圍濃度進(jìn)行氛圍退火處理,然后在空氣中再退火20分鐘使鈣鈦礦晶體進(jìn)行重結(jié)晶生長,可控制備致密無針孔、平整度高、結(jié)晶性好的高質(zhì)量MAPb I3多晶薄膜,器件轉(zhuǎn)換效率從11.9%提升為15.7%。另外,我們研究了鈣鈦礦薄膜的結(jié)晶機(jī)理,證實溶劑氛圍對薄膜表面的破壞性,從而提出在結(jié)晶末段無溶劑氛圍烘烤處理的必要性。2、空穴收集層poly-TPD的成膜工藝探索與機(jī)理研究。鑒于poly-TPD導(dǎo)電率不高,器件性能對其厚度敏感的情況,我們研究了poly-TPD溶液濃度對器件性能的影響。研究發(fā)現(xiàn),現(xiàn)有方法制備的poly-TPD薄膜平整度差,器件性能重復(fù)性不強(qiáng)。本論文提出在熱基底上旋涂poly-TPD薄膜的制備工藝,通過增大基底表面能,極大改善poly-TPD薄膜質(zhì)量,提高了poly-TPD薄膜有效覆蓋率,并明顯提高薄膜的平整度,因此器件光電轉(zhuǎn)換效率由14.87%提高到18.60%,并且性能重復(fù)性大大提高。3、改進(jìn)電子傳輸層PC_(61)BM的制備工藝。我們將熱基底制備工藝也運(yùn)用到電子傳輸層PC_(61)BM,解決其粘附性差導(dǎo)致薄膜覆蓋率低、平整度差的問題。結(jié)果表明,制備PC_(61)BM的基底溫度為60℃時可以得到得到均勻平整、無孔洞的表面形貌,最終器件的轉(zhuǎn)換效率可以達(dá)到19.16%。這是因為,提高電子傳輸層的薄膜質(zhì)量,能有效的降低鈣鈦礦的表面缺陷、阻止載流子在鈣鈦礦與電極界面處的復(fù)合,因此可以提高載流子的抽取與傳輸效率。
[Abstract]:The organic-inorganic halide perovskite solar cells have the characteristics of low cost, simple preparation process and high efficiency. They have been widely studied and developed rapidly in recent years. At present, the photoelectric conversion efficiency has exceeded 22%.The rapid increase of energy conversion efficiency is essentially the result of continuous improvement of perovskite film quality and continuous optimization of device structure.In this paper, the inverted p-i-n plane heterojunction structure is used as a model (as shown in figure 1-14) to explore the fabrication process of hole transport layer, perovskite film and electron transport layer, respectively, in order to regulate the structural properties of each functional layer and improve the photovoltaic performance of the device.The main contents are as follows: 1: 1, improving the preparation process of MAPb I 3 in air environment.By increasing the solvent atmosphere of DMSO during baking, the effects of the concentration of DMSO atmosphere and the annealing time and time point on the film forming quality were studied systematically.The results show that the perovskite crystal is recrystallized by annealing in the first 10 minutes of the crystal growth at the concentration of 1.5 mg/cm3 DMSO, and then recrystallized in the air for 20 minutes.The conversion efficiency of high quality MAPb I _ 3 polycrystalline films with good crystallinity is increased from 11.9% to 15.7%.In addition, we have studied the crystallization mechanism of perovskite film and confirmed the destruction of solvent atmosphere on the surface of the film. Therefore, the necessity of baking in solvent-free atmosphere at the end of crystallization, and the study of film forming process and mechanism of hole collection layer (poly-TPD) were put forward.In view of the fact that the conductivity of poly-TPD is not high and the device performance is sensitive to its thickness, we have studied the effect of the concentration of poly-TPD solution on the performance of the device.It is found that the poly-TPD films prepared by the existing methods have poor smoothness and low repeatability.In this paper, the preparation process of poly-TPD thin films on hot substrates is proposed. By increasing the surface energy of poly-TPD films, the quality of poly-TPD films is greatly improved, the effective coverage of poly-TPD films is increased, and the smoothness of poly-TPD thin films is obviously improved.Therefore, the photoelectric conversion efficiency of the device is increased from 14.87% to 18.60%, and the repeatability of the device is greatly improved. 3. The fabrication process of PC_(61)BM is improved.We also apply the thermal substrate preparation process to the electronic transport layer PCS 61BMM to solve the problem of low film coverage and poor flatness due to its poor adhesion.The results show that when the substrate temperature of PC_(61)BM is 60 鈩，

本文編號：1740004