本文選題：反鐵電薄膜 + 離子摻雜��； 參考：《南京郵電大學》2016年碩士論文

【摘要】：反鐵電材料由于其在現(xiàn)代高新技術中起著越來越重要的作用而成為國內外研究的熱點,而具有復合鈣鈦礦結構的PbZrO_3基反鐵電材料是一類最有發(fā)展?jié)摿Φ姆磋F電材料。其中,摻雜離子的PbZrO_3基反鐵電薄膜電容的制備工藝及其儲能性能,具有重要的理論意義和應用價值。本論文采用化學溶液沉積法(CSD)結合快速熱處理工藝(RTA)制備鋯酸鉛(PbZrO_3,PZO)基反鐵電薄膜,研究了這類薄膜材料的摻雜改性、相變、反鐵電、介電、儲能等性能。采用化學溶液沉積法結合快速熱處理工藝在Pt/Ti/SiO_2/Si襯底上制備了不同Pr~(3+)離子含量Pb_(1-1.5x)Pr_xZrO_3(PPrZ)薄膜,研究了Pr~(3+)離子含量對薄膜形貌結構、能量存儲和介電性質的影響。經過600℃快速熱處理后的PPrZ薄膜呈偽立方相鈣鈦礦結構,PPrZ薄膜表面致密,無裂紋。不同濃度的Pr~(3+)離子的摻雜對PbZrO_3反鐵電薄膜的電學性能影響巨大,通過改變離子濃度可以得到不同儲電性能的鋯酸鉛薄膜樣品。研究表明,適量Pr~(3+)離子的摻雜可以有效增強PbZrO_3反鐵電薄膜的電學性能。論文最后主要分析了新型儲能電容器在高密度儲能電容器領域在軍事方面、混合動力車輛、生物醫(yī)學、物聯(lián)網底層傳感網節(jié)點上潛在的應用。重點介紹了PbZrO_3反鐵電薄膜電容器在為物聯(lián)網底層傳感網節(jié)點供電上的應用。論文結尾對全文進行總結,并對進一步實驗提出改進方案。本論文研究工作還有很大的改進空間,可以通過改變實驗條件,得到性能更優(yōu)的鋯酸鉛反鐵電薄膜電容器。
[Abstract]:Antiferroelectric materials have become a hot research topic at home and abroad due to their more and more important role in modern high and new technology. PbZrO_3 based antiferroelectric materials with composite perovskite structure are the most promising antiferroelectric materials.Among them, the preparation process and energy storage performance of the doped PbZrO_3 based antiferroelectric thin film capacitors have important theoretical significance and application value.In this paper, PbZrO3PZO) based antiferroelectric thin films were prepared by chemical solution deposition method (CSD) and rapid heat treatment (RTA). The doping modification, phase transition, antiferroelectricity, dielectric and energy storage properties of PbZrO3PZO) based films were studied.Different Pr~(3) ion contents were prepared on Pt/Ti/SiO_2/Si substrates by chemical solution deposition and rapid heat treatment. The effects of Pr~(3) ion content on the morphology, energy storage and dielectric properties of the films were investigated.After rapid heat treatment at 600 鈩，

本文編號：1739982