本文選題：模型　切入點：波長　出處：《農(nóng)業(yè)工程學報》2017年18期

【摘要】：電勢誘導衰減(potential induced degradation,PID)效應是導致光伏組件輸出效率下降的主要原因之一。為了研究PID太陽電池前表面非平衡載流子復合特性,該論文首先分析PID太陽電池表面能帶及電場變化情況,利用連續(xù)性方程以及電流密度方程建立PID太陽電池表面復合速度S_(pPID)與短波內(nèi)量子效率(internal quantum efficiency,IQE(λ))之間的數(shù)學模型。其次,通過利用太陽電池常用計算模擬軟件PC1D模擬在不同工藝條件下晶體硅太陽電池IQE(λ),并且采用所構(gòu)建的數(shù)學模型計算PID效應太陽電池前表面復合速度S_(pPID),與未發(fā)生PID效應時前表面復合速度S_p以及I-V特性曲線進行對比。結(jié)果表明,利用短波IQE(λ)測量PID太陽電池前表面復合速度S_(pPID)時,波長選擇范圍在310~360 nm之間誤差較小;當太陽電池發(fā)生PID效應,前表面復合速度增大,前表面雜質(zhì)濃度低、鈍化效果好的太陽電池輸出I-V特性下降,對鈍化效果差、表面摻雜濃度高的太陽電池輸出I-V特性影響較小。論文的研究結(jié)果為制備抗PID效應組件提供理論基礎。
[Abstract]:The potential attenuated potential (induced) effect is one of the main reasons for the decrease of the output efficiency of photovoltaic modules. In order to study the nonequilibrium carrier recombination characteristics of the front surface of PID solar cells, the potential attenuation potential (induced) effect is one of the main reasons for the decrease of output efficiency of photovoltaic modules. In this paper, the surface energy band and electric field change of PID solar cell are analyzed, and the mathematical model between PID solar cell surface recombination velocity and internal quantum efficiency iQE (位) is established by using continuity equation and current density equation. In this paper, we simulate the crystal silicon solar cell IQE (位 _ (位)) under different technological conditions by using the solar cell simulation software PC1D, and use the mathematical model constructed to calculate the PID effect solar cell's front surface compound velocity, and compare with the PID effect of the crystal silicon solar cell. The surface recombination velocities (SSP) and I-V characteristic curves are compared. The results show that, When using short-wave IQE (位) to measure the composite velocity of front surface of PID solar cell, the wavelength selection range is 310 ~ 360nm and the error is small. When the PID effect occurs in the solar cell, the recombination velocity of the front surface increases and the concentration of impurity on the front surface is low. The output I-V characteristics of solar cells with good passivation effect are decreased, and the I-V characteristics of solar cells with high surface doping concentration and poor passivation effect are decreased. The results of this paper provide a theoretical basis for the fabrication of anti-#en0# effect modules.
【作者單位】： 云南師范大學太陽能研究所;
【基金】：云南省科技計劃面上項目“光伏組件PID效應與熱斑效應機理研究”(2017FB089)
【分類號】：TM914.4

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本文編號：1679112