本文選題：分析模型　切入點：碳化硅MOSFET　出處：《電工技術學報》2017年01期 　論文類型：期刊論文

【摘要】：為精確估算高頻工作狀態(tài)下SiC MOSFET的開關損耗及分析寄生參數(shù)對其開關特性的影響,提出了一種基于SiC MOSFET的精準分析模型。該模型考慮了寄生電感、SiC MOSFET非線性結電容及非線性跨導系數(shù)等參數(shù)。詳細介紹了建立分析模型的原理,并給出了分析模型中各關鍵參數(shù)的提取方法。對比了基于分析模型計算得到的開關波形與實驗測試結果,對比電壓電流波形匹配度較高,證明了此分析模型的正確性。對比了分析模型的開關損耗與基于實驗計算的開關損耗,對比結果顯示兩者存在偏差,而分析表明基于實驗計算開關損耗的方法為不準確方法。最后基于所提出的分析模型分析了不同寄生參數(shù)對開關特性的影響,并為優(yōu)化高頻電路設計提出了建議。
[Abstract]:In order to estimate the switching loss of SiC MOSFET at high frequency and analyze the influence of parasitic parameters on its switching characteristics, A precise analytical model based on SiC MOSFET is proposed, which takes into account the parameters of nonlinear capacitance and nonlinear transconductance of parasitic inductor sic MOSFET. The principle of establishing an analytical model is introduced in detail. The method of extracting the key parameters in the analysis model is given. The comparison between the switching waveform calculated by the analysis model and the experimental test results shows that the matching degree of the voltage and current waveform is higher than that of the analysis model. The correctness of the analysis model is proved. The switching loss of the analysis model is compared with the switching loss based on the experimental calculation. The comparison results show that there is a deviation between the two models. The analysis shows that the method of calculating switching loss based on experiments is inaccurate. Finally, based on the proposed analysis model, the influence of different parasitic parameters on switching characteristics is analyzed, and some suggestions for optimizing the design of high frequency circuits are put forward.
【作者單位】： 北京交通大學電氣工程學院;
【分類號】：TM46;TN386

【參考文獻】

相關期刊論文 前4條

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本文編號：1634945