天堂国产午夜亚洲专区-少妇人妻综合久久蜜臀-国产成人户外露出视频在线-国产91传媒一区二区三区

當(dāng)前位置:主頁 > 科技論文 > 電氣論文 >

鈣鈦礦型太陽能電池的穩(wěn)定性及大面積制備的研究

發(fā)布時間:2018-03-16 08:49

  本文選題:鈣鈦礦太陽能電池 切入點:活性層 出處:《鄭州大學(xué)》2017年碩士論文 論文類型:學(xué)位論文


【摘要】:隨著化石燃料等不可再生能源的不斷消耗,人類面臨的能源危機日趨重。因此,可再生能源太陽能越來越受到人們的重視。作為第三代太陽能電池,鈣鈦礦太陽能電池(PSCs)的活性層具有極高的消光系數(shù),較大的載流子擴散長度及雙極性載流子傳輸?shù)刃阅艹蔀檠芯繜狳c。實現(xiàn)商業(yè)化應(yīng)用,必須在提高光電轉(zhuǎn)化效率的基礎(chǔ)上,逐步提高PSCs在空氣中的穩(wěn)定性,突破器件大面積制備的瓶頸。本論文通過界面調(diào)控法制備高效鈣鈦礦太陽能電池,同時器件的穩(wěn)定性得到了極大地提高;另外通過噴墨打印法制備出厚度均勻,粗糙度低及微米級鈣鈦礦晶粒尺寸的鈣鈦礦薄膜,從而實現(xiàn)了大面積高性能太陽能電池的制備,主要研究內(nèi)容包括:1.將高聚物聚乙烯亞胺(PEI)溶于二-甲氧基乙醇中旋涂于空穴傳輸層VOX上,通過對比處理前后鈣鈦礦前驅(qū)體溶液接觸角,發(fā)現(xiàn)處理前后接觸角由30.9°減小為15.1°,界面浸潤性得到了提高。制備出的鈣鈦礦薄膜,通過頂層掃描電鏡(SEM)發(fā)現(xiàn),經(jīng)過PEI處理后的薄膜覆蓋率由70%提高到了95%左右;截面SEM表明,處理后的鈣鈦礦厚度從290 nm提高至320 nm;X射線衍射(XRD)表明,經(jīng)過PEI處理后,鈣鈦礦結(jié)晶性得到了提高。2.制備器件結(jié)構(gòu)為FTO/VOX/CH_3NH_3PbI_XCl_(3-X)/PCBM/LiF/Al的太陽能電池,發(fā)現(xiàn)由于鈣鈦礦薄膜厚度提高增加了光的吸收,經(jīng)過PEI處理后的器件量子效率得到了提升,J-V曲線發(fā)現(xiàn)器件的短路電流密度提高,最高效率達到了14.4%,穩(wěn)態(tài)PL及電化學(xué)阻抗進一步證明器件性能的提升。由于PEI的吸水性,將另外一層PEI薄層至于PCBM/PEI/LiF/Al,優(yōu)化后的器件至于自然條件下,經(jīng)過10天后,器件效率下降不到10%,然而參考器件經(jīng)過同樣的條件,效率下降了90%左右,相關(guān)實驗表明該界面處理可以大大提高器件在空氣中的穩(wěn)定性。3.選用超浸潤介孔二氧化鈦作為噴墨打印基底,將PbI_2溶于DMF、DMSO及兩者的混合液中,配置出質(zhì)量分數(shù)為20%的溶液。通過DMP2831噴墨打印機制備碘化鉛薄膜,通過調(diào)節(jié)打印參數(shù)、基板溫度及退火時間,主要因為DMF和DMSO熔點及揮發(fā)性不同;由于溶劑揮發(fā)速度慢,沸點高,純DMSO溶液制備的PbI_2薄膜表面粗糙度達到200 nm以上;旌先芤褐苽涑龅腜bI_2薄膜平整度較好,后期經(jīng)過碘甲胺(MAI)處理后發(fā)現(xiàn),形成的鈣鈦礦薄膜表面粗糙度為30 nm左右,晶粒尺寸達到微米級別。4.通過噴墨打印制備器件結(jié)構(gòu)為FTO/c-TiO_2/m-TiO_2/CH_3NH_3PbI_3/spiro-OMeTAD/Au的太陽能電池,通過IPCE、J-V曲線表明電池開路電壓和短路電流得到了提升,穩(wěn)態(tài)PL、電化學(xué)阻抗也驗證了這一點。最終獲得最高效率達到了18.12%。打印有效面積為10 cm2的太陽能電池,其效率高達10%以上,是目前報道的噴墨打印制備太陽能電池的最高效率。
[Abstract]:With the continuous consumption of non-renewable energy such as fossil fuels, the energy crisis facing mankind is becoming more and more serious. Therefore, renewable energy solar energy has been paid more and more attention. As the third generation solar cells, The active layer of perovskite solar cell (PSCs) has a very high extinction coefficient, and the large carrier diffusion length and bipolar carrier transport have become the research focus. To realize commercial application, it is necessary to improve the efficiency of photoelectric conversion. The stability of PSCs in air is improved step by step, and the bottleneck of large area fabrication of PSCs is broken through. In this paper, the high efficiency perovskite solar cells are fabricated by interfacial control method, and the stability of the devices is greatly improved. In addition, the thin films with uniform thickness, low roughness and micron perovskite grain size were prepared by inkjet printing method, which realized the preparation of large area and high performance solar cells. The main research contents include: 1. The polyethyleneimide (PEI) solution soluble in dimethoxy ethanol is rotated on the hole transport layer VOX, and the contact angle of perovskite precursor solution is compared before and after treatment. It was found that the contact angle decreased from 30.9 擄to 15.1 擄before and after treatment, and the interfacial wettability of the perovskite films was improved. It was found that the coverage of perovskite films after PEI treatment was increased from 70% to 95%, and the cross-section SEM showed that the perovskite films were prepared by SEM. The increase of perovskite thickness from 290nm to 320nm X-ray diffraction (XRD) shows that the crystallinity of perovskite is improved by PEI treatment. A solar cell with FTO/VOX/CH_3NH_3PbI_XCl_(3-X)/PCBM/LiF/Al structure is prepared. It is found that the increase of the thickness of perovskite film increases the absorption of light, and the quantum efficiency of the device treated by PEI increases the short-circuit current density of the device. The highest efficiency reached 14.4%. The steady-state PL and electrochemical impedance further proved the improvement of the device performance. Because of the water absorption of PEI, the other layer of PEI thin layer was turned into PCBM / PEI / LiF / Al, and the optimized device under natural conditions, after 10 days, The efficiency of the device has decreased by less than 10 percent, but the efficiency of the reference device has decreased by about 90% under the same conditions. The experimental results show that the interface treatment can greatly improve the stability of the device in air. The superwetting mesoporous titanium dioxide is selected as the inkjet printing substrate, and the PbI_2 is dissolved in the DMF DMSO and the mixture of the two. A solution with a mass fraction of 20%. Lead iodide film was prepared by DMP2831 inkjet printer. By adjusting printing parameters, substrate temperature and annealing time, mainly because of the different melting point and volatility of DMF and DMSO, the solvent volatilized slowly. The surface roughness of PbI_2 thin film prepared by pure DMSO solution is more than 200nm. The surface roughness of PbI_2 film prepared by mixed solution is good. The surface roughness of perovskite film is about 30 nm after the treatment of iodomethylamine (mai). The grain size reaches micron level .4.The solar cells with FTO/c-TiO_2/m-TiO_2/CH_3NH_3PbI_3/spiro-OMeTAD/Au structure are fabricated by inkjet printing. The open-circuit voltage and short-circuit current are increased by IPCE-J-V curve. The steady-state PLand electrochemical impedance also verifies this point. The maximum efficiency is 18.12. The efficiency of printing solar cells with an effective area of 10 cm2 is more than 10%, which is the highest efficiency of the reported solar cells prepared by inkjet printing.
【學(xué)位授予單位】:鄭州大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2017
【分類號】:TM914.4

【相似文獻】

相關(guān)期刊論文 前1條

1 陳濤;馬明樂;宋春龍;陳堅;陳東生;;聚光太陽能光伏組件的特性研究[J];物理通報;2014年04期

相關(guān)碩士學(xué)位論文 前5條

1 李鵬偉;鈣鈦礦型太陽能電池的穩(wěn)定性及大面積制備的研究[D];鄭州大學(xué);2017年

2 劉永強;二氧化鈦微球基太陽能電池的制備及性能優(yōu)化[D];鄭州大學(xué);2017年

3 王毅樂;高吸收效率太陽能電池陷光機制和光學(xué)特性研究[D];鄭州大學(xué);2017年

4 馬麗;基于CuI為P型材料的反型鈣鈦礦太陽能電池的制備與性能研究[D];鄭州大學(xué);2017年

5 孫貝貝;TiO_2納米纖維介孔層在鈣鈦礦電池中的應(yīng)用[D];鄭州大學(xué);2017年

,

本文編號:1619177

資料下載
論文發(fā)表

本文鏈接:http://sikaile.net/kejilunwen/dianlidianqilunwen/1619177.html


Copyright(c)文論論文網(wǎng)All Rights Reserved | 網(wǎng)站地圖 |

版權(quán)申明:資料由用戶40b62***提供,本站僅收錄摘要或目錄,作者需要刪除請E-mail郵箱bigeng88@qq.com