本文關(guān)鍵詞： 硅太陽電池 載流子選擇性接觸 電導(dǎo)率不對稱　出處：《物理學(xué)報(bào)》2017年15期 　論文類型：期刊論文

【摘要】：太陽電池可看成由光子吸收層和接觸層兩個基本單元組成,接觸層是高復(fù)合活性金屬界面和光子吸收層之間的區(qū)域.為了進(jìn)一步提高硅太陽電池的轉(zhuǎn)換效率,關(guān)鍵是降低光子吸收層和接觸之間的復(fù)合損失.近年來,載流子選擇性接觸引起了光伏界的研究興趣,其被認(rèn)為是接近硅太陽電池效率理論極限的最后的障礙之一.本文分析了三種類型的載流子選擇性接觸:在光子吸收層與金屬界面之間引入薄的重?fù)诫s層,即所謂的發(fā)射極或背面場;利用兩種材料之間的導(dǎo)帶或價(jià)帶對齊;利用高功函數(shù)的金屬氧化物與晶硅接觸從而在晶硅中感應(yīng)能帶彎曲.基于一維太陽電池模擬軟件wx AMPS,模擬了擴(kuò)散同質(zhì)結(jié)硅太陽電池[結(jié)構(gòu)為(p~+)c-Si/(n)c-Si/(n~+)c-Si]、非晶硅薄膜硅異質(zhì)結(jié)太陽電池[結(jié)構(gòu)為(p~+)a-Si/(i)a-Si/(n)c-Si/(i)a-Si/(n~+)a-Si]和氧化物薄膜硅異質(zhì)結(jié)太陽電池[結(jié)構(gòu)為(n)MoO_x/(n)c-Si/(n)TiO_x]暗態(tài)下的能帶結(jié)構(gòu)和載流子濃度的空間分布,其中c-Si為晶硅;a-Si為非晶硅;(i),(n)和(p)分別表示本征、n型摻雜和p型摻雜.模擬結(jié)果表明:載流子選擇性接觸的核心是在接觸處晶硅表面附近形成載流子濃度空間分布的不對稱進(jìn)而使得電導(dǎo)率的不對稱,形成了對電子的高阻和空穴的低阻或者對空穴的高阻和電子的低阻,從而讓空穴輕松通過同時阻擋電子,或者讓電子輕松通過同時阻擋空穴,形成空穴選擇性接觸或者電子選擇性接觸.
[Abstract]:The solar battery can be regarded as a photon absorption layer and a contact layer two layer is composed of the basic unit, contact between the high active metal composite interface and photon absorption layer. In order to further improve the efficiency of silicon solar cell, the key is to reduce the photon absorption loss between the composite layer and the contact of the carrier. In recent years, selective exposure caused research interest in the photovoltaic industry, which is considered to be one of the last obstacle to the silicon solar cell efficiency. This paper analyzes the theoretical limit of the carrier selective exposure of three types: the photon absorption layer and metal interface into a heavily doped layer is thin, the emitter or the back of the so-called use between the two materials; conduction or valence band alignment; using high work function metal oxide contact with silicon and silicon in the induction of band bending. One dimensional solar cell simulation software Wx based on AMPS simulation 浜嗘墿鏁ｅ悓璐ㄧ粨紜呭お闃崇數(shù)姹燵緇撴瀯涓，

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