發(fā)布時(shí)間：2018-01-26 23:18

  本文關(guān)鍵詞： 特高壓 GIS隔離開(kāi)關(guān) VFTO 重復(fù)擊穿　出處：《沈陽(yáng)工業(yè)大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著我國(guó)特高壓電網(wǎng)的發(fā)展,GIS變電站以其自身的優(yōu)點(diǎn)得得到了廣泛的應(yīng)用,但GIS隔離開(kāi)關(guān)開(kāi)關(guān)的操作會(huì)產(chǎn)生特快速瞬態(tài)過(guò)電壓(VFTO),對(duì)電氣設(shè)備的絕緣構(gòu)成嚴(yán)重威脅。本文課題來(lái)源于“特高壓GIS變電站VFTO關(guān)鍵技術(shù)研究”項(xiàng)目,針對(duì)隔離開(kāi)關(guān)觸頭設(shè)計(jì)對(duì)VFTO的影響進(jìn)行了深入研究。通過(guò)求解特高壓GIS隔離開(kāi)關(guān)三維電場(chǎng),計(jì)算觸頭間隙電場(chǎng)分布,依據(jù)流注擊穿判據(jù),獲取特高壓GIS隔離開(kāi)關(guān)觸頭間隙擊穿電壓曲線;根據(jù)理論分析,構(gòu)建隔離開(kāi)關(guān)間隙擊穿燃弧和熄弧判定條件,以國(guó)標(biāo)“交流隔離開(kāi)關(guān)和接地開(kāi)關(guān)”為依據(jù),采用EMTP/ATP電磁暫態(tài)仿真軟件,搭建特高壓GIS隔離開(kāi)關(guān)開(kāi)合短母線時(shí)的重復(fù)擊穿全過(guò)程電磁暫態(tài)仿真模型,仿真分析隔離開(kāi)關(guān)分合閘操作全過(guò)程的影響因素。(1)分析特高壓GIS隔離開(kāi)關(guān)操作時(shí)VFTO形成機(jī)理,研究隔離開(kāi)關(guān)電弧模型參數(shù)對(duì)VFTO的影響。仿真表明,觸頭間隙擊穿延時(shí)增大時(shí),VFTO陡度逐漸變小;穩(wěn)態(tài)燃弧電阻越大,VFTO電壓波形衰減越快,并對(duì)VFTO具有一定程度的抑制作用。(2)采用有限元方法計(jì)算特高壓GIS隔離開(kāi)關(guān)三維電場(chǎng),依據(jù)流注擊穿判據(jù)理論獲得不同間隙距離下的擊穿電壓值,擊穿電壓隨間隙距離近似呈線性增長(zhǎng)關(guān)系;通過(guò)對(duì)隔離開(kāi)關(guān)重復(fù)擊穿過(guò)程機(jī)理分析,獲得間隙擊穿燃弧和熄弧判定條件,根據(jù)GIS元件等效模型,搭建重復(fù)擊穿仿真模型,通過(guò)分合閘仿真可知,隔離開(kāi)關(guān)電源側(cè)電壓波形是高頻振蕩脈沖與正弦電壓的疊加,負(fù)載側(cè)電壓波形呈現(xiàn)臺(tái)階狀,每次擊穿時(shí),擊穿電壓越大,產(chǎn)生的高頻振蕩脈沖幅值越大,最大振蕩脈沖幅值約為1.2p.u,因此在間隙距離比較大時(shí),產(chǎn)生較大幅值的VFTO;操作過(guò)程多次產(chǎn)生高頻暫態(tài)電流VFTC,分閘過(guò)程幅值逐漸增大,合閘過(guò)程中VFTC幅值逐漸減小。(3)重復(fù)擊穿過(guò)程影響因素研究。通過(guò)分析特高壓GIS隔離開(kāi)關(guān)間隙電場(chǎng)分布影響因素,仿真計(jì)算不同觸頭曲率半徑下的間隙電場(chǎng)可知,曲率半徑越大,間隙擊穿電壓越大;然后將不同觸頭形狀下的擊穿電壓曲線帶入重復(fù)擊穿仿真模型進(jìn)行仿真分析,由概率統(tǒng)計(jì)可知,觸頭曲率半徑越大,分合閘過(guò)程中產(chǎn)生大幅值VFTO的概率增加,擊穿次數(shù)和重復(fù)擊穿持續(xù)時(shí)間逐漸減少;最后仿真不同短母線殘余電壓下的合閘過(guò)程可知,殘余電壓幅值越高,線路產(chǎn)生的VFTO值越大,擊穿次數(shù)和重復(fù)擊穿持續(xù)時(shí)間逐漸增多。
[Abstract]:With the rapid development of China's UHV power grid, GIS substation with its own advantages it has been widely used, but GIS disconnector switch operation will produce very fast transient overvoltage (VFTO), which poses a serious threat to the insulation of electrical equipment. This paper is from the "high pressure GIS" Research on Key Technology of substation the VFTO project, aimed at isolating switch contact design on the VFTO effect of the in-depth study. By solving the three-dimensional electric field of UHV GIS isolation switch, calculate the distribution of electric field on the basis of contact, streamer breakdown criterion, to obtain GIS extra high voltage isolating switch contact gap breakdown voltage curve; on the basis of theoretical analysis, construction of isolation switch breakdown arc extinguishing and arc conditions, to the national standard "AC isolating switch and grounding switch" as the basis, using the electromagnetic transient simulation software EMTP/ATP, build GIS ultra high voltage isolation switch switching short bus The electromagnetic transient simulation model of repeated breakdown of the whole process, the simulation analysis of influencing factors of opening and closing switch operation in the whole process. (1) analysis of UHV GIS isolation switch operation mechanism of VFTO, a parametric study of the effects of VFTO isolation switch arc model. Simulation results show that the contact gap breakdown delay increases, VFTO gradient becomes smaller steady state; arc resistance is VFTO, voltage waveform attenuation is fast, and has a certain degree of inhibition of VFTO. (2) by using the finite element method to calculate the UHV disconnector in GIS three-dimensional electric field, on the basis of streamer criteria theory to obtain the breakdown voltage under different gap distance value, the breakdown voltage increases linearly with the gap the approximate distance; through the analysis of the mechanism of repeated isolation switch breakdown process, obtain the gap breakdown arc and arc quenching conditions, according to the GIS model, build the simulation model of repeated breakdown, By switching simulation, isolating switch power supply side voltage waveform is the high frequency oscillation pulse superposition and sinusoidal voltage, load voltage waveform is stepped, each breakdown, the breakdown voltage increases, the high frequency oscillation pulse amplitude increases and the maximum oscillation amplitude is about 1.2p.u, so the gap is relatively large have a greater amplitude of VFTO; the operation process produced several high frequency transient current VFTC, breaking the amplitude increases gradually, the process of closing the VFTC amplitude decreased gradually. (3) study on the influencing factors of repeated breakdown process. Through the analysis of influence factors of UHV disconnector in GIS the distribution of electric field, electric field simulation shows different radius of curvature of the contact the radius of curvature, the greater the greater the gap breakdown voltage; then the breakdown voltage curves of different shapes into repeated contact breakdown simulation model by analysis. Statistics show that the radius of curvature of the contact, increase the probability of VFTO amplitude switching process, breakdown times and repeat breakdown duration decreased gradually; the closing process of the simulation of different short bus residual voltage of the residual voltage amplitude is higher, the line produces a larger VFTO value breakdown times and repeat the breakdown duration gradually increased.

【學(xué)位授予單位】：沈陽(yáng)工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TM564.1

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