鋸齒型硅納米線的制備及其光電性能研究
發(fā)布時(shí)間：2019-05-21 13:00
【摘要】：硅納米線(SiNWs)陣列結(jié)構(gòu)具有獨(dú)特的陷光性能,用作晶硅太陽電池表面減反射層能夠有效的提高光的吸收率,為進(jìn)一步提高光電轉(zhuǎn)換效率奠定了基礎(chǔ)。本文采用成本低廉且操作簡單的金屬催化化學(xué)刻蝕法(MCCE),通過交替刻蝕成功制備出形貌高度可控的鋸齒型硅納米線(ZSiNWs)陣列結(jié)構(gòu),并就不同參數(shù)對(duì)納米線形貌的影響進(jìn)行研究。在此基礎(chǔ)上探討了 ZSiNWs結(jié)構(gòu)的減反射性能和少數(shù)載流子壽命,取得了一些有意義的成果。主要研究內(nèi)容和結(jié)論如下:(1)在單個(gè)溶液刻蝕實(shí)驗(yàn)中,證明H202濃度主要影響刻蝕方向,即較低濃度下為各向異性刻蝕,較高濃度下為各向同性刻蝕,而HF濃度主要影響刻蝕速率;在相同HF濃度,不同H2O2濃度下的交替刻蝕實(shí)驗(yàn)中,驗(yàn)證了交替刻蝕法制備ZSiNWs的可能性,并證明無限制增大H2O2濃度差來制備ZSiNWs是不可行的。(2)在濃度為[HF]/[H2O2]=9.2M/0.04M 和[HF]/[H2O2]=2.3M/0.4M 的兩種溶液中交替刻蝕,分別強(qiáng)化了各向異性刻蝕與各向同性刻蝕,使所得ZSiNWs形貌高度可控。系統(tǒng)研究了沉積時(shí)間、刻蝕時(shí)間與基底類型對(duì)納米線形貌的影響,結(jié)果表明,沉積時(shí)間對(duì)納米線形貌影響較大,沉積時(shí)間為40s和80s時(shí)納米線較為均勻有序;刻蝕時(shí)間主要影響刻蝕深度;交替刻蝕法制備ZSiNWs適用于非(100)基底。(3)ZSiNWs陣列機(jī)構(gòu)具有優(yōu)異的減反射性能,在200-1100nm波段平均反射率低至6.6%。對(duì)比發(fā)現(xiàn),沉積時(shí)間對(duì)其表面反射率影響較小,而隨著刻蝕時(shí)間增長,表面反射率明顯升高,最高至10.7%。(4)對(duì)沉積時(shí)間為40s條件下制備所得ZSiNWs分別進(jìn)行了 Ⅰ鍵鈍化,H鍵鈍化和SiO2膜鈍化實(shí)驗(yàn),并測試了鈍化前后結(jié)構(gòu)的少子壽命。結(jié)果表明,三種鈍化方法均使得少子壽命明顯提高,但Ⅰ鍵鈍化與H鍵鈍化衰減較快,只有SiO2膜鈍化具有較高的穩(wěn)定性。總體而言,鈍化效果為SiO2膜鈍化H鍵鈍化I鍵鈍化。
[Abstract]:The (SiNWs) array structure of silicon nanowires has unique trapping properties. As an antireflective layer on the surface of silicon solar cells, it can effectively improve the absorptivity of light, which lays a foundation for further improving the photoelectric conversion efficiency. In this paper, a highly controllable sawtooth silicon nanowire (ZSiNWs) array structure was successfully fabricated by alternating etching of (MCCE), a metal catalytic chemical etching method with low cost and simple operation. The effects of different parameters on the morphology of nanowires were studied. On this basis, the antireflection performance and minority carrier lifetime of ZSiNWs structure are discussed, and some meaningful results are obtained. The main research contents and conclusions are as follows: (1) in the experiment of single solution etch, it is proved that the concentration of H202 mainly affects the direction of etch, that is, it is anisotropy etch at lower concentration and isotropic etch at higher concentration. The concentration of HF mainly affects the etch rate. In the experiment of alternating etching at the same HF concentration and different H2O2 concentration, the possibility of preparing ZSiNWs by alternating etch method was verified. It is proved that it is not feasible to prepare ZSiNWs by increasing the concentration difference of H2O2 without restriction. (2) alternately etched in two solutions with concentrations of [HF] / [H2O2] = 9.2M/0.04M and [HF] / [H2O2] = 2.3M/0.4M. Anisotropy etch and isotropic etch are strengthened respectively, so that the morphology of ZSiNWs is highly controllable. The effects of deposition time, etch time and substrate type on the morphology of nanowires were studied systematically. the results show that the deposition time has a great influence on the morphology of nanowires, and the nanowires are uniform and orderly when the deposition time is 40 s and 80 s. The etch time mainly affects the etch depth, and the alternating etch method is suitable for the preparation of ZSiNWs substrate. (3) the ZSiNWs array mechanism has excellent antireflection performance, and the average reflectivity in 200-1100nm band is as low as 6.6%. It is found that the deposition time has little effect on the surface reflectivity, but with the increase of etch time, the surface reflectivity increases obviously. The highest is 10.7%. (4) the I bond passivation, H bond passivation and SiO2 film passivation of ZSiNWs prepared under the condition of 40 s deposition time were carried out, and the minority carrier lifetime of the structure before and after passivation was tested. The results show that the minority carrier lifetime is obviously improved by the three passivation methods, but the decay of I bond passivation and H bond passivation is faster, and only SiO2 film passivation has high stability. Generally speaking, the passivation effect of SiO2 film is H bond passivation I bond passivation.
【學(xué)位授予單位】：昆明理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O613.72;TB383.1
本文編號(hào)：2482110
[Abstract]:The (SiNWs) array structure of silicon nanowires has unique trapping properties. As an antireflective layer on the surface of silicon solar cells, it can effectively improve the absorptivity of light, which lays a foundation for further improving the photoelectric conversion efficiency. In this paper, a highly controllable sawtooth silicon nanowire (ZSiNWs) array structure was successfully fabricated by alternating etching of (MCCE), a metal catalytic chemical etching method with low cost and simple operation. The effects of different parameters on the morphology of nanowires were studied. On this basis, the antireflection performance and minority carrier lifetime of ZSiNWs structure are discussed, and some meaningful results are obtained. The main research contents and conclusions are as follows: (1) in the experiment of single solution etch, it is proved that the concentration of H202 mainly affects the direction of etch, that is, it is anisotropy etch at lower concentration and isotropic etch at higher concentration. The concentration of HF mainly affects the etch rate. In the experiment of alternating etching at the same HF concentration and different H2O2 concentration, the possibility of preparing ZSiNWs by alternating etch method was verified. It is proved that it is not feasible to prepare ZSiNWs by increasing the concentration difference of H2O2 without restriction. (2) alternately etched in two solutions with concentrations of [HF] / [H2O2] = 9.2M/0.04M and [HF] / [H2O2] = 2.3M/0.4M. Anisotropy etch and isotropic etch are strengthened respectively, so that the morphology of ZSiNWs is highly controllable. The effects of deposition time, etch time and substrate type on the morphology of nanowires were studied systematically. the results show that the deposition time has a great influence on the morphology of nanowires, and the nanowires are uniform and orderly when the deposition time is 40 s and 80 s. The etch time mainly affects the etch depth, and the alternating etch method is suitable for the preparation of ZSiNWs substrate. (3) the ZSiNWs array mechanism has excellent antireflection performance, and the average reflectivity in 200-1100nm band is as low as 6.6%. It is found that the deposition time has little effect on the surface reflectivity, but with the increase of etch time, the surface reflectivity increases obviously. The highest is 10.7%. (4) the I bond passivation, H bond passivation and SiO2 film passivation of ZSiNWs prepared under the condition of 40 s deposition time were carried out, and the minority carrier lifetime of the structure before and after passivation was tested. The results show that the minority carrier lifetime is obviously improved by the three passivation methods, but the decay of I bond passivation and H bond passivation is faster, and only SiO2 film passivation has high stability. Generally speaking, the passivation effect of SiO2 film is H bond passivation I bond passivation.
【學(xué)位授予單位】：昆明理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O613.72;TB383.1
【參考文獻(xiàn)】
相關(guān)期刊論文 前10條
1 王艷周;岳紅偉;栗軍帥;李亞麗;;金屬輔助化學(xué)刻蝕法制備硅納米線[J];中國科技論文;2015年17期
2 Latefa Baba Ahmed;Sabrina Naama;Aissa Keffous;Abdelkader Hassein-Bey;Toufik Hadjersi;;H_2 sensing properties of modified silicon nanowires[J];Progress in Natural Science:Materials International;2015年02期
3 郭春林;汪雷;戴準(zhǔn);房劍鋒;鄭佳毅;楊德仁;;快速熱氧化制備超薄二氧化硅層及其鈍化效果[J];材料科學(xué)與工程學(xué)報(bào);2015年01期
4 蔣一嵐;袁曉東;廖威;陳靜;張傳超;張麗娟;王海軍;欒曉雨;葉亞云;;硅納米線尖端陣列的制備及其場發(fā)射性能研究[J];強(qiáng)激光與粒子束;2015年01期
5 何建坤;;中國能源革命與低碳發(fā)展的戰(zhàn)略選擇[J];武漢大學(xué)學(xué)報(bào)(哲學(xué)社會(huì)科學(xué)版);2015年01期
6 張宇;鐘佳慧;張晨芳;李路;;太陽能電池金字塔結(jié)構(gòu)減反膜仿真設(shè)計(jì)[J];電子世界;2014年07期
7 何悅;竇亞楠;馬曉光;陳紹斌;褚君浩;;熱原子層沉積氧化鋁對(duì)硅的鈍化性能及熱穩(wěn)定性[J];物理學(xué)報(bào);2012年24期
8 馬淵明;謝超;江鵬;于永強(qiáng);王莉;揭建勝;;熱蒸發(fā)SiO大量合成硅納米線及其可控p型摻雜[J];合肥工業(yè)大學(xué)學(xué)報(bào)(自然科學(xué)版);2011年07期
9 周建偉;梁靜秋;梁中翥;王維彪;;硅納米線陣列的光學(xué)特性[J];發(fā)光學(xué)報(bào);2010年06期
10 傅焰鵬;陳慧鑫;楊勇;;鋰離子電池硅納米線負(fù)極材料研究[J];電化學(xué);2009年01期
，本文編號(hào)：2482110
本文鏈接：http://sikaile.net/kejilunwen/cailiaohuaxuelunwen/2482110.html
最近更新
教材專著
