【摘要】：低維材料與人們的生活息息相關(guān)，因此對低維材料的深入研究受到了各個(gè)領(lǐng)域研究人員的重視。由于納米材料其特有的性能，使得納米材料在納米電子器件的連接、光導(dǎo)纖維、集成電路、太陽能電池等各個(gè)領(lǐng)域有著至關(guān)重要的作用。電子的自陷可以讓人們更加深入的了解納米線的特殊性能，對提高人們的生活水平有著重要的意義。 這篇論文研究的是柱型納米線中電子與聲學(xué)聲子的相互作用以及這種相互作用可能導(dǎo)致的極化子自陷轉(zhuǎn)變。首先采用Huybrechts變分法，運(yùn)用柱型納米線中電子—聲學(xué)聲子相互作用哈密頓量，對其進(jìn)行兩次么正變換，計(jì)算出了納米線中聲學(xué)極化子的基態(tài)能量，便于討論柱型納米線中聲學(xué)極化子的自陷問題。 研究結(jié)果表明，判斷柱型納米線聲學(xué)極化子能否自陷的判別標(biāo)準(zhǔn)q0的近似值比一維系統(tǒng)中聲學(xué)極化子自陷標(biāo)準(zhǔn)大，但是比三維系統(tǒng)聲學(xué)極化子自陷標(biāo)準(zhǔn)小。因此納米線中聲學(xué)極化子的自陷難易程度介于一維情況和三維情況中間，并且半徑越小，納米線聲學(xué)極化子的自陷轉(zhuǎn)變越容易發(fā)生。運(yùn)用文中計(jì)算得到的納米線中聲學(xué)極化子自陷的判斷標(biāo)準(zhǔn)，，在理論上判斷了GaN、AlN等材料中聲學(xué)極化子的自陷。結(jié)果表明：GaN和AlN中的電子均有可能在納米線結(jié)構(gòu)中自陷。這對今后進(jìn)一步研究納米材料有一定的借鑒意義。
[Abstract]:Low-dimensional materials are closely related to people's lives, so the in-depth study of low-dimensional materials has been paid attention to by researchers in various fields. Due to the unique properties of nano-materials, nano-materials play an important role in the connection of nano-electronic devices, optical fiber, integrated circuit, solar cells and so on. The self-trapping of electrons can make people understand the special properties of nanowires more deeply, and it is of great significance to improve people's living standards. This paper deals with the electron-acoustic phonon interaction in columnar nanowires and the possible polaron self-trapping transition caused by this interaction. Firstly, the ground state energy of the acoustic polaron in the nanowires is calculated by using the Huybrechts variation method and the electron-acoustic phonon interaction Hamilton in the cylindrical nanowires, and the unitary transformation is carried out twice to calculate the ground state energy of the acoustic polaron in the nanowires. It is convenient to discuss the self-trapping problem of acoustic polaron in cylindrical nanowires. The results show that the approximate value of criterion Q0 is larger than that of acoustic polaron self-trapping in one-dimensional system, but smaller than that of acoustic polaron self-trapping in three-dimensional system. Therefore, the degree of self-trapping of acoustic polaron in nanowires is between one-dimensional and three-dimensional cases, and the smaller the radius is, the more likely the self-trapping transition of acoustic polaron in nanowires will occur. Based on the criterion of acoustic polaron self-trapping in nanowires calculated in this paper, the self-trapping of acoustic polaron in GaN,AlN and other materials is theoretically judged. The results show that the electrons in GaN and AlN may trap themselves in nanowire structure. This can be used for reference in the further study of nano-materials in the future.
【學(xué)位授予單位】：山西師范大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TB383.1;O469

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