發(fā)布時(shí)間：2019-03-28 16:32

【摘要】：纖鋅礦GaN及其三元混晶廣泛用于光電器件,可通過調(diào)制材料組分改進(jìn)其性質(zhì).核殼結(jié)構(gòu)納米線(CSNW)利用集成度高,可克服短溝道效應(yīng)以及通過減少表面缺陷獲得高電子遷移率等優(yōu)勢(shì)在納米器件領(lǐng)域展示出應(yīng)用前景.多層核殼結(jié)構(gòu)納米線(CMSNWs)常用作發(fā)光二極管、太陽能電池以及晶體管的功能單元.在低維多層體系中,界面光學(xué)聲子(IOP)與電子的相互作用對(duì)光電性質(zhì)有重要影響.本文以GaN-CSNW為例討論纖鋅礦CMSNWs中界面光學(xué)聲子的轉(zhuǎn)移矩陣法(TMM)求解.本文主要依據(jù)介電連續(xù)模型和單軸晶體模型,討論多殼層核殼納米線中IOP的轉(zhuǎn)移矩陣數(shù)值解法及其特點(diǎn).本文以三層及四層GaN/Inxa1-xN/InyGa1-yN/InzGa1-zN核殼納米線為例,驗(yàn)證方法的適用性,并進(jìn)一步討論CMSNWs中IOP的種類、支數(shù),及其存在條件、色散關(guān)系和聲子靜電勢(shì)等特點(diǎn).計(jì)算表明,轉(zhuǎn)移矩陣法適用于CMSNWs中IOP的求解.IOP以界面的可能組合的方式分類,其特征如下(1)體系材料的特定組分下,存在特定種類的IOP,且各自有特定頻率區(qū)間;(2)纖鋅礦Ⅲ族氮化物CMSNWs中IOP的色散關(guān)系是所有相鄰兩層材料所組成的核殼納米線(CSNW)中界面光學(xué)聲子色散關(guān)系的組合,從而獲得n界面CMSNWs中最多有2n支IOP的規(guī)律,與層狀體系中的2n原則相符;(3)IOP靜電勢(shì)峰值的位置取決于多層核殼納米線中各層材料In組分的大小.基于TMM,我們可以進(jìn)一步討論纖鋅礦Ⅲ族氮化物CMSCWs中IOP相關(guān)的光電性質(zhì).
[Abstract]:Wurtzite GaN and its ternary mixed crystals are widely used in optoelectronic devices, and their properties can be improved by modulating the composition of materials. Core-shell nanowires (CSNW) with high integration can overcome the short channel effect and achieve high electron mobility by reducing surface defects. Multilayer core-shell nanowires (CMSNWs) are often used as functional units of light emitting diodes, solar cells and transistors. In the low-dimensional multilayer system, the interaction between the interface optical phonon (IOP) and the electron has an important effect on the photoelectric properties. In this paper, taking GaN-CSNW as an example, the transfer matrix method (TMM) of interface optical phonon in wurtzite CMSNWs is discussed. Based on the dielectric continuum model and uniaxial crystal model, the transfer matrix numerical solution of IOP in multi-shell core-shell nanowires and its characteristics are discussed in this paper. In this paper, three-layer and four-layer GaN/Inxa1-xN/InyGa1-yN/InzGa1-zN core-shell nanowires are taken as examples to verify the applicability of the method. The types, number of branches, existence conditions, dispersion relation and phonon electrostatic potential of IOP in CMSNWs are further discussed. The results show that the transfer matrix method is suitable for the solution of IOP in CMSNWs. IOPs are classified in the form of possible combinations of interfaces, and their characteristics are as follows: (1) there are specific types of IOP, in the specific component of the system material, and each has a specific frequency range; (2) the dispersion relation of IOP in wurtzite 鈪，

本文編號(hào)：2449039