【摘要】：以銅(Cu)作為催化劑,采用兩步化學(xué)腐蝕法成功制備了微納米多孔硅(PS)。本文方法成本低廉、操作簡(jiǎn)易。系統(tǒng)研究了腐蝕液中H2O2濃度、Si襯底摻雜濃度、腐蝕液溫度和腐蝕時(shí)間對(duì)PS表面形貌和腐蝕深度的影響,并得到最佳制備參數(shù)。高、低摻Si襯底所采用的最佳配比腐蝕液中的H2O2濃度分別達(dá)到0.70mol/L和0.24mol/L。在25℃腐蝕液中,腐蝕2h得到約200nm深的納米級(jí)孔洞,其表面反射率在寬波段內(nèi)降低到5%以下;而在50℃腐蝕液中,經(jīng)過(guò)2~4h的腐蝕,可得到14~41μm深的結(jié)構(gòu)穩(wěn)定的微納米級(jí)孔洞。文中還對(duì)Cu輔助腐蝕與其他金屬輔助腐蝕(MACE)作了對(duì)比,分析了Cu輔助腐蝕獲得錐狀孔洞的原因和機(jī)理。
[Abstract]:Microporous silicon (PS).) was successfully prepared by two-step chemical etching with copper (Cu) as catalyst. This method is cheap and easy to operate. The effects of H2O2 concentration, Si substrate doping concentration, corrosion temperature and corrosion time on the surface morphology and corrosion depth of PS were systematically studied, and the optimum preparation parameters were obtained. The concentration of H2O2 in the high and low doped Si substrate is 0.24 mol / L and 0.24 mol / L, respectively. In the corrosion solution at 25 鈩，

本文編號(hào)：2413169