【摘要】：本文采用直流磁控濺射法在柔性襯底上制備了ZAO薄膜,并利用附著力測試儀、X射線衍射儀、掃描電子顯微鏡、四探針測試儀、紫外可見分光光度計等測試儀器表征薄膜性能。再通過研究氬氣壓強、濺射功率、濺射時間對薄膜性能的影響,獲得最佳工藝,并在此工藝下分別在聚酰亞胺(PI)和玻璃襯底上制備ZAO薄膜,最后對其進行性能對比。研究發(fā)現(xiàn),10-14Pa氬氣壓強下濺射的薄膜都具有明顯的C軸擇優(yōu)取向,在氬氣壓強為10-12Pa范圍內(nèi),增大氬氣壓強可以提升薄膜結晶質量,在12Pa時,晶粒尺寸最大,薄膜導電性能最好,并能提高500-800nm波段的透過率,但是更大的壓強會降低薄膜的性能;改變?yōu)R射功率的大小對薄膜的(002)峰擇優(yōu)取向的程度影響較大,過高過低的功率都會降低薄膜在500-800nm波段的透過率;隨著濺射時間的增加,膜的厚度增大,薄膜的結構、晶粒大小、電學特性都得到了優(yōu)化。總結這幾個工藝條件得到制備優(yōu)質性能的ZAO薄膜的最佳制備條件為:本底真空3103-′Pa,氬氣流量為12sccm,氬氣壓強為12Pa,濺射功率為50W,濺射時間為30min。采用最佳制備工藝條件,分別在PI膜和玻璃上沉積ZAO薄膜時,可能由于PI膜本身的性質,表面惰性較大,使其與ZAO薄膜的晶格匹配稍差,因此PI膜上獲得的薄膜的結構、電學性能等都較玻璃襯底上的薄膜差,但是在550-800nm波段,PI襯底沉積的ZAO薄膜的平均絕對透過率為96.5%,高于玻璃襯底的94.5%。
[Abstract]:The ZAO film was prepared on the flexible substrate by direct current magnetron sputtering, and the performance of the film was characterized by an adhesion tester, an X-ray diffractometer, a scanning electron microscope, a four-probe tester, an ultraviolet-visible spectrophotometer and the like. The influence of the argon pressure, the sputtering power and the sputtering time on the performance of the film was also studied. The optimum process was obtained, and the ZAO film was prepared on the polycarbodiimide (PI) and the glass substrate, respectively, and the performance was compared. It is found that the films sputtered under the pressure of 10-14Pa have the obvious C-axis preferred orientation, and the argon pressure can be increased to 10-12Pa, the crystallization quality of the film can be improved by increasing the argon pressure, and at 12Pa, the grain size is the largest, the film conductivity can be best, and the transmittance of the 500-800nm wave band can be improved, but the larger pressure can lower the performance of the film, the influence of changing the size of the sputtering power on the preferential orientation of the (002) peak of the thin film is large, the over-high power can reduce the transmittance of the film in the range of 500-800nm, and the thickness of the film is increased, the structure of the film is increased with the increase of the sputtering time, The grain size and the electrical property are optimized. The optimum conditions for preparing the ZAO thin film with high quality are as follows: the background vacuum is 3103-1Pa, the flow rate of argon is 12sccm, the pressure of argon is 12Pa, the sputtering power is 50W, and the sputtering time is 30min. By adopting the best preparation process conditions, when the ZAO film is deposited on the PI film and the glass respectively, the surface inertia of the PI film can be relatively large due to the nature of the PI film, so that the lattice matching with the ZAO thin film is slightly poor, so that the structure of the thin film obtained on the PI film, In the 550-800nm band, the average absolute transmittance of the ZAO film deposited by the PI substrate is 96.5%, which is higher than 94.5% of the glass substrate.
【學位授予單位】：暨南大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TB383.2

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