【摘要】：采用化學氣相沉積法(CVD)以酞菁銅(CuPc)為催化劑、甲烷為碳源在二氧化硅(SiO_2)基底上合成了碳納米管薄膜(CNTs),經過掃描電鏡(SEM)表征發(fā)現(xiàn),合成的碳納米管外徑較大,范圍約在140~280nm,長度約在10μm以上。拉曼光譜分析表明合成的碳納米管為無定形(α-CNTs)結構。通過透射電鏡(TEM)可以看出所制備α-CNTs管內中空,管壁厚度不均勻,約為20~100nm。采用二極管結構,在真空室中真空度為2×10-4 Pa時進行了場發(fā)射特性測試,測試結果表明SiO_2(α-CNTs)薄膜的場發(fā)射開啟場強為1.05V/μm。通過計算得出薄膜的場增強因子為1.32×104,結果表明SiO_2(α-CNTs)具有良好的場發(fā)射特性。
[Abstract]:Carbon nanotubes (CNTs),) thin films were synthesized by chemical vapor deposition (CVD) on silicon dioxide (SiO_2) substrate using copper phthalocyanine (CuPc) as catalyst and methane as carbon source. (CNTs), was characterized by scanning electron microscope (SEM). The synthesized carbon nanotubes have a large outer diameter, with a range of about 140 ~ 280 nm and a length of more than 10 渭 m. Raman spectroscopy showed that the synthesized carbon nanotubes were 偽-CNTs structure. Transmission electron microscope (TEM) showed that the 偽-CNTs was hollow in the tube, and the thickness of the wall was not uniform, about 20 ~ 100 nm. The field emission characteristics of SiO_2 (偽-CNTs) thin films were measured with a vacuum of 2 脳 10 ~ (-4) Pa. The results show that the field intensity of SiO_2 (偽-CNTs) thin films is 1.05V/ 渭 m. The field enhancement factor of the film is 1.32 脳 10 ~ 4. The results show that SiO_2 (偽-CNTs) has good field emission characteristics.
【作者單位】： 鄭州航空工業(yè)管理學院理學院;河南省航空材料與應用技術重點實驗室;
【基金】：國家自然科學基金項目(61274012、11404291) 河南省科技創(chuàng)新杰出人才項目(164200510006) 航空科學基金項目(2014ZF55013、2015ZF55013) 河南省高等學校重點科研項目計劃(16B140005)
【分類號】：TB383.1;TQ127.11

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1 張琦鋒,于潔,宋教花,張耿民,張兆祥,薛增泉,吳錦雷;碳納米管陣列的氣相沉積制備及場發(fā)射特性[J];物理化學學報;2004年04期

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