一種植入玻璃表面的碳納米管電極及其場(chǎng)發(fā)射性能研究
發(fā)布時(shí)間:2018-11-23 12:52
【摘要】:實(shí)現(xiàn)了一種通過(guò)水玻璃粘結(jié)劑將碳納米管植入玻璃基底表面并呈現(xiàn)均勻"植布"效果的場(chǎng)發(fā)射電極。通過(guò)低溫工藝固化碳納米管形態(tài),并保證高選擇比的濕法刻蝕工藝,實(shí)現(xiàn)碳納米管端部刻蝕露出作為場(chǎng)發(fā)射源,而根部植入水玻璃粘結(jié)介質(zhì)中的分散植布效果。通過(guò)高溫強(qiáng)化工藝,在碳納米管與粘結(jié)劑結(jié)合界面形成1層穩(wěn)定的-Si-O-薄膜,增加碳納米管與陰極薄膜的結(jié)合力,提高其場(chǎng)發(fā)射性能。高溫強(qiáng)化后電極開(kāi)啟電壓由1.52V/μm降至0.74V/μm明顯降低。同時(shí),在外加場(chǎng)強(qiáng)2.3V/μm時(shí),可以得到大于233μA的穩(wěn)定場(chǎng)發(fā)射電流持續(xù)發(fā)射40h。
[Abstract]:A field emission electrode with uniform "cloth" effect on carbon nanotubes implanted on glass substrate by sodium silicate binder has been developed. The morphology of carbon nanotubes was solidified at low temperature and the wet etching process with high selective ratio was ensured. The results showed that the end etching of carbon nanotubes was used as a field emission source and the root was implanted in sodium silicate binder. A layer of stable Si-O- film was formed at the interface between carbon nanotube and binder by high temperature strengthening process. The bonding force between carbon nanotube and cathode film was increased and the field emission property was improved. The electrode opening voltage decreased from 1.52V/ 渭 m to 0.74V/ 渭 m after high temperature strengthening. At the same time, when the applied field strength is 2.3V/ 渭 m, the stable field emission current larger than 233 渭 A can be obtained for 40 h.
【作者單位】: 上海交通大學(xué)微米納米加工技術(shù)國(guó)家級(jí)重點(diǎn)實(shí)驗(yàn)室;
【基金】:國(guó)家自然科學(xué)基金資助項(xiàng)目(51305265) 高等學(xué)校博士學(xué)科點(diǎn)專(zhuān)項(xiàng)科研基金資助項(xiàng)目(20120073110061)
【分類(lèi)號(hào)】:TB383.1;O646.54
[Abstract]:A field emission electrode with uniform "cloth" effect on carbon nanotubes implanted on glass substrate by sodium silicate binder has been developed. The morphology of carbon nanotubes was solidified at low temperature and the wet etching process with high selective ratio was ensured. The results showed that the end etching of carbon nanotubes was used as a field emission source and the root was implanted in sodium silicate binder. A layer of stable Si-O- film was formed at the interface between carbon nanotube and binder by high temperature strengthening process. The bonding force between carbon nanotube and cathode film was increased and the field emission property was improved. The electrode opening voltage decreased from 1.52V/ 渭 m to 0.74V/ 渭 m after high temperature strengthening. At the same time, when the applied field strength is 2.3V/ 渭 m, the stable field emission current larger than 233 渭 A can be obtained for 40 h.
【作者單位】: 上海交通大學(xué)微米納米加工技術(shù)國(guó)家級(jí)重點(diǎn)實(shí)驗(yàn)室;
【基金】:國(guó)家自然科學(xué)基金資助項(xiàng)目(51305265) 高等學(xué)校博士學(xué)科點(diǎn)專(zhuān)項(xiàng)科研基金資助項(xiàng)目(20120073110061)
【分類(lèi)號(hào)】:TB383.1;O646.54
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