【摘要】：聚酰亞胺(PI)/石墨烯不僅有著遠(yuǎn)遠(yuǎn)優(yōu)越于ITO的透光和導(dǎo)電性能,而且可彎曲。但恰是由于石墨烯只有單層或幾層碳原子構(gòu)成,通常制備的石墨烯薄膜易脫落、方阻高。本實(shí)驗(yàn)制備PI/石墨烯基復(fù)合透明導(dǎo)電薄膜,希望保證復(fù)合薄膜良好光電性能,同時(shí)保護(hù)石墨烯膜層。實(shí)驗(yàn)采用射頻、直流和脈沖直流電源濺射Mo粉末靶,改變靶基距(靶到基體的距離),測(cè)量基體漂移電壓及飽和電流,探討濺射驅(qū)動(dòng)方式及靶基距對(duì)等離子體行為的影響,并根據(jù)實(shí)驗(yàn)結(jié)果后續(xù)薄膜的制備選取130mm的靶基距,ZnO薄膜的制備分別采用射頻及脈沖直流電源(占空比選75%、頻率為100KHZ)。Ag薄膜的制備采用脈沖電源(占空比選80%、頻率為100KHZ)Ag靶采用直流電源。并通過(guò)臺(tái)階儀、XRD-衍射儀、原子力顯微鏡、掃描電子顯微鏡、霍爾效應(yīng)儀及紫外-可見(jiàn)分光光度計(jì)對(duì)制備的薄膜樣品進(jìn)行表征。使用射頻和脈沖直流電源制備的PI/石墨烯/Zn O復(fù)合薄膜,在石墨烯上ZnO為柱狀晶生長(zhǎng),晶粒擇優(yōu)取向?yàn)?002)。并隨功率的增加,薄膜厚度增加,表面顆粒趨于平整。復(fù)合薄膜在可見(jiàn)光區(qū)透光率均達(dá)到72%以上,方阻均大于石墨烯方阻,但由于膜厚的增加電阻率顯著升高。因此,需要通過(guò)其他手段提高薄膜的電學(xué)性能。金屬夾層可以提高TCO復(fù)合薄膜的電學(xué)性能。采用脈沖磁控濺射制備PI/石墨烯/Ag復(fù)合薄膜,并討論不同Ag層薄膜厚度PI/石墨烯/Ag復(fù)合薄膜的光電性能,光電性能最佳的樣品方阻為5.36Ω/sq可見(jiàn)光區(qū)平均透光率64%。為了進(jìn)一步提高透光率,并保護(hù)表層的Ag薄膜,在最優(yōu)PI/石墨烯/Ag上沉積120nm厚的ZnO薄膜,制備PI/石墨烯/Ag/ZnO復(fù)合薄膜,制備樣品方阻為989Ω/sq,可見(jiàn)光區(qū)平均透光率為62%。實(shí)驗(yàn)成功使用墨水法和刮刀涂布法制備了CuInAlSe2太陽(yáng)電池吸收薄膜,為CuInAlSe2太陽(yáng)電池吸收薄膜提供一種新的制備方法。并通過(guò)自定的熱處理工藝極大的降低了薄膜中有機(jī)的殘留。
[Abstract]:Polyimide (PI) / graphene not only has much better transmittance and conductive properties than ITO, but also can bend. However, because graphene is composed of a single layer or several layers of carbon atoms, the graphene film is easy to fall off and the square resistance is high. In this experiment, PI/ graphene based composite transparent conductive thin films were prepared in order to ensure the good photoelectric properties of the composite films and to protect the graphene film layer at the same time. RF, DC and pulse DC power sources were used to sputtering Mo powder target. The distance between the target and the substrate was changed. The drift voltage and saturation current of the substrate were measured, and the effect of the sputtering driving mode and the distance between the target and the substrate on the plasma behavior was discussed. According to the experimental results, the target distance of 130mm was selected according to the results of the experiment. The ZnO thin films were prepared by RF and pulsed DC power supply (75 duty cycle, 75 duty cycle, 80 duty cycle, respectively). The frequency is 100KHZ) Ag target uses DC power supply. The films were characterized by step analyzer, XRD- diffractometer, atomic force microscope, scanning electron microscope, Hall effect instrument and UV-Vis spectrophotometer. The PI/ graphene / Zn O composite thin films prepared by RF and pulsed DC power supply were grown on graphene with columnar crystal, and the preferred orientation was (002). With the increase of power, the film thickness increases and the surface particles tend to be flat. The transmittance of the composite films in the visible region is over 72%, and the square resistance is larger than that of graphene, but the resistivity increases obviously due to the increase of film thickness. Therefore, the electrical properties of the films need to be improved by other means. Metal interlayer can improve the electrical properties of TCO composite films. PI/ graphene / Ag composite films were prepared by pulsed magnetron sputtering. The optoelectronic properties of PI/ graphene / Ag composite films with different Ag film thickness were discussed. The square resistance of the sample with the best optoelectronic properties is 5.36 惟 / sq and the average transmittance is 64 in the visible region. In order to further improve the transmittance and protect the surface Ag film, the 120nm thick ZnO film was deposited on the optimal PI/ graphene / Ag substrate, and the PI/ graphene / Ag/ZnO composite film was prepared. The square resistance of the sample was 989 惟 / sq,. The average transmittance in the visible region is 62. The absorption film of CuInAlSe2 solar cell was successfully prepared by ink method and scraper coating method, which provides a new preparation method for CuInAlSe2 solar cell absorption film. The organic residue in the film was greatly reduced by self-determined heat treatment.
【學(xué)位授予單位】：遼寧科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2

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