【摘要】：20世紀(jì)以來,隨著電子技術(shù)、航空航天、能源、計(jì)算機(jī)、激光、通信、光電子學(xué)、生物醫(yī)學(xué)以及環(huán)境保護(hù)等新技術(shù)的興起,新技術(shù)的發(fā)展對(duì)材料提出了更高的要求,促進(jìn)了無機(jī)非金屬材料的迅速發(fā)展。而無機(jī)非金屬材料具有的耐壓強(qiáng)度高、硬度大、耐高溫、抗腐蝕等優(yōu)異的特性,是金屬材料和高分子材料所不及的。SiC作為一種性能優(yōu)良的無機(jī)非金屬材料,被廣泛應(yīng)用于電子、信息、精密加工技術(shù)、軍工、航空航天、特種陶瓷材料和增強(qiáng)材料等領(lǐng)域,越來越受到人們的關(guān)注。本試驗(yàn)利用化學(xué)鍍技術(shù)和磁控濺射技術(shù)在β-SiC粉體(β-SiC)表面包覆金屬銅膜,對(duì)表面銅膜的形貌、相組成、表面粗糙度、膜層與基體的結(jié)合力、膜層厚度及薄膜沉積過程和沉積機(jī)理進(jìn)行了深入的研究,對(duì)試驗(yàn)結(jié)果給出了合理的解釋,對(duì)化學(xué)鍍方法和磁控濺射方法在粉體表面改性方面的應(yīng)用做了詳細(xì)的比較。采用本課題組優(yōu)化后的化學(xué)鍍工藝參數(shù),在β-SiC表面成功地制備了金屬銅膜,膜層均勻、致密,與基體結(jié)合良好。通過機(jī)械攪拌,粉體可在鍍液中保持良好的分散狀態(tài),使得化學(xué)鍍技術(shù)容易實(shí)現(xiàn)在微米β-SiC顆粒(β-SiCp)、β-SiC晶須(β-SiCw)和納米β-SiC顆粒(納米β-SiCp)等超細(xì)粉體表面鍍膜。由于粉體過細(xì),化學(xué)鍍過程中在納米β-SiCp表面生成的微晶銅極易吸附鍍液中的O,生成Cu2O雜質(zhì)相。化學(xué)鍍銅表面薄膜生長過程屬于島狀沉積模式,被還原出來的Cu原子附著在活化后β-SiC表面的具有催化作用的粒子(質(zhì)點(diǎn))上,Cu原子在質(zhì)點(diǎn)周圍沉積,并相互連接,最終形成連續(xù)的Cu薄膜。利用多功能磁控濺射鍍膜裝置成功地實(shí)現(xiàn)了在β-SiCp表面包覆金屬銅膜。與化學(xué)鍍銅膜相比,磁控濺射銅膜更加均勻、致密、完整,與β-SiCp結(jié)合力優(yōu)于化學(xué)鍍銅膜與β-SiCp結(jié)合力。通過調(diào)節(jié)設(shè)備自帶的超聲系統(tǒng)功率和機(jī)械擺動(dòng)頻率,保證了β-Si Cp每個(gè)面的濺射鍍膜。研究了濺射時(shí)間、濺射功率和基底溫度對(duì)銅膜質(zhì)量的影響。濺射試驗(yàn)結(jié)果表明:β-SiCp表面銅膜的結(jié)晶度、膜層厚度、表面粗糙度及表面銅晶粒尺寸均隨著濺射時(shí)間的延長、濺射功率的增加、基底溫度的升高而增大。β-SiCp表面磁控濺射銅膜沉積為動(dòng)態(tài)沉積,動(dòng)態(tài)薄膜沉積的機(jī)制為島狀為主、層狀為輔的混合生長機(jī)制。盡管化學(xué)鍍和磁控濺射兩種方法都可以在β-SiC粉體表面形成銅膜,但是從工藝原理、操作過程、改性層質(zhì)量、試驗(yàn)成本以及應(yīng)用領(lǐng)域等方面各不相同。化學(xué)鍍銅薄膜厚度、表面粗糙度均大于磁控濺射鍍銅薄膜,但是化學(xué)鍍銅薄膜的致密性和結(jié)合力比磁控濺射銅薄膜的差�；瘜W(xué)鍍是一種化學(xué)方法,操作復(fù)雜,產(chǎn)生的廢水、廢氣易對(duì)環(huán)境造成影響。磁控濺射是一種真空鍍膜方法,薄膜是通過原子沉積形成的,該方法所鍍薄膜均勻、致密且純度高,但是磁控濺射方法制備成本約為化學(xué)鍍制備成本的3-5倍。
[Abstract]:Since the 20th century, with the rise of electronic technology, aerospace, energy, computer, laser, communication, optoelectronics, biomedicine and environmental protection, the development of new technology has put forward higher requirements for materials. It promotes the rapid development of inorganic non-metallic materials. However, inorganic nonmetallic materials have many excellent properties, such as high pressure resistance, high hardness, high temperature resistance, corrosion resistance and so on. SiC, as a kind of inorganic nonmetallic materials with excellent properties, is widely used in electronics. More and more attention has been paid to the fields of information, precision machining, military industry, aerospace, special ceramic materials and reinforcements. In this experiment, electroless plating and magnetron sputtering were used to coat the metal copper film on the surface of 尾-SiC powder (尾-SiC). The morphology, phase composition, surface roughness and adhesion between the film and the substrate were investigated. The film thickness, deposition process and deposition mechanism were studied, the experimental results were explained reasonably, and the application of electroless plating method and magnetron sputtering method in powder surface modification was compared in detail. Using the optimized process parameters of electroless plating, copper film was successfully prepared on the surface of 尾-SiC. The coating was uniform, compact and well bonded to the substrate. By mechanical agitation, the powder can be dispersed in the bath, and the electroless plating technology is easy to realize the coating on the surface of micron 尾-SiC (尾-SiCp), 尾-SiC whisker (尾-SiCw) and nano 尾-SiC (nano 尾-SiCp). Because the powder is too fine, the microcrystalline copper formed on the surface of nanometer 尾-SiCp during electroless plating is easy to adsorb the O in the bath and form the Cu2O impurity phase. The growth process of electroless copper-plated surface films belongs to the island deposition model. The reduced Cu atoms are attached to the catalytic particles (particles) on the activated 尾-SiC surface, and the Cu atoms are deposited around the particles and connected with each other. Finally, continuous Cu films were formed. Metal copper films were successfully coated on 尾-SiCp by multifunctional magnetron sputtering device. Compared with electroless copper coating, magnetron sputtering copper film is more uniform, compact and complete, and the binding force with 尾-SiCp is better than that of electroless copper plating film and 尾-SiCp film. By adjusting the power of ultrasonic system and the frequency of mechanical swing, the sputtering coating on each surface of 尾-Si Cp is ensured. The effects of sputtering time, sputtering power and substrate temperature on the quality of copper film were studied. The results of sputtering test show that the crystallinity, thickness, surface roughness and grain size of copper on 尾-SiCp surface increase with the increase of sputtering time, and the sputtering power increases with the increase of sputtering time. With the increase of substrate temperature, the deposition of 尾-SiCp surface magnetron sputtering copper film is dynamic deposition, the mechanism of dynamic film deposition is island-like and layered mixed growth mechanism. Although both electroless plating and magnetron sputtering can form copper film on the surface of 尾-SiC powder, the process principle, operation process, modified layer quality, test cost and application field are different. The thickness and surface roughness of electroless copper thin film are higher than that of magnetron sputtering copper film, but the density and adhesion of electroless copper plating film are worse than that of magnetron sputtering copper film. Electroless plating is a kind of chemical method. The operation is complicated, the waste water and waste gas are easy to affect the environment. Magnetron sputtering is a vacuum coating method, which is formed by atomic deposition. The film is uniform, compact and pure, but the preparation cost of magnetron sputtering is about 3-5 times as much as that of electroless plating.
【學(xué)位授予單位】：佳木斯大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB306

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