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疏水性半導(dǎo)體量子點(diǎn)的二氧化硅修飾及其應(yīng)用

發(fā)布時(shí)間:2018-10-11 08:50
【摘要】:由于納米量子點(diǎn)杰出的特性使得制備高質(zhì)量的量子點(diǎn)的方法得到了快速的發(fā)展,尤其是采用有機(jī)溶液合成法可以制備出多種高量子效率的量子點(diǎn)。為了使量子點(diǎn)在相關(guān)的領(lǐng)域具有更好的應(yīng)用性能,須對(duì)親油性(疏水性)的量子點(diǎn)進(jìn)行適當(dāng)?shù)谋砻嫘揎。本論文的主要工作就是采用硅烷試劑?duì)疏水性量子點(diǎn)進(jìn)行表面修飾研究,并把修飾后的量子點(diǎn)均勻分散到二氧化硅基體中去,為其作為發(fā)光材料應(yīng)用進(jìn)行了探索。本論文主要開(kāi)展了以下的工作:(1)疏水性量子點(diǎn)的二氧化硅表面修飾研究使用原硅酸四乙酯(TEOS)、3-氨基丙基三甲氧基硅烷(APS)和3-巰基丙基三甲氧基硅烷(MPS)分別對(duì)疏水性的Cd Se/Cd Zn S量子點(diǎn)(表面配體為油酸)進(jìn)行表面修飾。通過(guò)調(diào)整硅烷劑在濃度、反應(yīng)時(shí)間等其他諸多條件,可以有效的改善量子點(diǎn)在二氧化硅修飾中的熒光猝滅問(wèn)題,并能確保修飾后的量子點(diǎn)在進(jìn)一步應(yīng)用時(shí)仍然保持原有的光譜特性及較高的熒光強(qiáng)度。(2)熒光復(fù)合薄膜的制備及其性能研究利用TEOS和MPS分別對(duì)疏水性的Cd Se/Cd Zn S量子點(diǎn)進(jìn)行表面修飾,通過(guò)層層自組裝法(self-assembly method)制備具有-Si O2-QDs-的層狀結(jié)構(gòu)的復(fù)合熒光薄膜。該薄膜隨著自組裝層數(shù)的增加其熒光強(qiáng)度顯著的增加。量子點(diǎn)在薄膜中分布均勻,濃度可以高達(dá)2.62×10-12 mol/cm2。所制備的熒光復(fù)合薄膜還具有良好的透明度和熱穩(wěn)定性。(3)熒光凝膠玻璃的制備及其性能研究利用APS直接對(duì)疏水性的Cd Se/Cd Zn S量子點(diǎn)進(jìn)行表面修飾,制備成含有QDs的溶膠,最終獲得了透明的高熒光Si O2-QDs凝膠玻璃。研究發(fā)現(xiàn)對(duì)于不同晶體結(jié)構(gòu)的Cd Se/Cd Zn S量子點(diǎn),使用APS進(jìn)行表面修飾得到的凝膠玻璃的量子效率有顯著的不同;所制備的熒光凝膠玻璃較有較高的量子效率、均勻的分散度、良好的透明度以及高的熱穩(wěn)定性能。(4)包含多個(gè)量子點(diǎn)的二氧化硅熒光納米球的制備在使用TEOS對(duì)疏水性QDs表面修飾的基礎(chǔ)上,我們采用變異的“St?ber法”將多個(gè)修飾后的疏水性QDs成功的包覆于二氧化硅納米球內(nèi),且所制備的紅色發(fā)光的二氧化硅納米球的量子效率為31%。
[Abstract]:Due to the outstanding properties of nanometer quantum dots, the methods of preparing high quality quantum dots have been developed rapidly. Especially, many kinds of quantum dots with high quantum efficiency can be prepared by organic solution synthesis. In order to improve the application performance of quantum dots in related fields, it is necessary to modify the surface of hydrophilic (hydrophobic) quantum dots. The main work of this thesis is to study the surface modification of hydrophobic quantum dots by using silane reagent, and disperse the modified quantum dots evenly into silica matrix, and explore their applications as luminescent materials. The main work of this thesis is as follows: (1) the surface modification of hydrophobic quantum dots using tetraethyl silicate (TEOS), 3-aminopropyl trimethoxysilane (APS) and 3-mercapto propyl trimethoxysilane (MPS) to hydrophobicity respectively The surface of Cd Se/Cd Zn S quantum dots (surface ligand is oleic acid) was modified. By adjusting the concentration, reaction time and other conditions of silane, the fluorescence quenching of quantum dots in silica modification can be effectively improved. And it can ensure that the modified QDs can maintain the original spectral characteristics and high fluorescence intensity in the further application. (2) the preparation and properties of fluorescent composite films; the study on the hydrophobic Cd Se/Cd Zn S content of TEOS and MPS respectively Surface modification of the subpoints, Multilayer fluorescent films with Si O 2-QDs- were prepared by layer-by-layer self-assembly (self-assembly method) method. With the increase of the number of self-assembled layers, the fluorescence intensity of the film increases significantly. The quantum dots are uniformly distributed in the films with concentrations up to 2.62 脳 10 ~ (-12) mol/cm2.. (3) preparation of fluorescent gel glass and its properties; Surface modification of hydrophobic Cd Se/Cd Zn S quantum dots directly by APS to prepare QDs sol. Finally, transparent high fluorescence Si O2-QDs gel glass was obtained. It is found that for Cd Se/Cd Zn S quantum dots with different crystal structure, the quantum efficiency of the gel glass modified by APS is significantly different, and the fluorescent gel glass has higher quantum efficiency and uniform dispersion. Good transparency and high thermal stability. (4) the preparation of silica fluorescent nanospheres containing multiple quantum dots is based on the surface modification of hydrophobic QDs using TEOS. We successfully coated several modified hydrophobic QDs onto silica nanospheres by mutated "St?ber method", and the quantum efficiency of the red luminescent silica nanospheres was 31.
【學(xué)位授予單位】:天津理工大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2015
【分類(lèi)號(hào)】:TB306;O613.72

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