CIAS薄膜太陽電池吸收層制備和性能研究
發(fā)布時間：2018-10-10 10:26
【摘要】：能源危機和環(huán)境污染問題日趨嚴重極大地促進了光伏產(chǎn)業(yè)的發(fā)展。太陽能作為新型的、最具發(fā)展?jié)摿Φ目稍偕茉粗豢梢杂行У亟鉀Q這兩大問題。開發(fā)太陽能資源的新技術—太陽電池的研究成為了光伏界的熱點。吸收層是太陽電池的核心部件。黃銅礦晶體結構的CuInSe2(CIS)半導體薄膜以其轉化效率高、抗輻射能力強、穩(wěn)定性好等特點備受研究者關注。本文通過摻雜Al元素部分替代In,制備CIAS薄膜作為CIAS薄膜太陽電池的吸收層,降低了成本。改變薄膜組分中Al元素的含量,調(diào)節(jié)禁帶寬度,與太陽光譜更好的配合。本實驗采用真空蒸發(fā)法在普通玻璃基底上制備了CIAS薄膜,并結合真空硒化退火進行處理。重點研究了摻雜元素Al含量、退火溫度及退火時間對CIAS薄膜結構和性能的影響。分別采用X射線衍射、掃描電子顯微鏡、EDS能譜儀、臺階儀、霍爾效應儀、紫外—可見—近紅外分光光度計對CIAS薄膜的結構、形貌、成分、厚度及光電性能進行了分析研究。結果表明:真空熱蒸發(fā)制備的CIAS薄膜結晶性都很完整,呈現(xiàn)出黃銅礦晶體結構,并且以(112)晶面優(yōu)先生長。Al部分替代了CIS晶格中的In,減小了面間距。CIAS薄膜導電類型為P型,載流子濃度達到1020數(shù)量級。隨著Al含量的減少,CIAS薄膜表現(xiàn)出顆粒大小均勻、界限分明、致密的結構特征。對沉積態(tài)的CuIn1-xAlxSe2薄膜進行真空硒化退火,選取350~550℃作為退火溫度,實驗中發(fā)現(xiàn),退火有助于Cu、In、Al、Se原子在薄膜內(nèi)部的遷移、擴散及相互結合。450℃退火后的薄膜成分更接近理想配比,光電性能適于作為光伏電池的吸收層。以450℃作為退火溫度,改變退火時間,結果表明,隨著退火時間的增加,薄膜的顆粒尺寸增大,電阻率表現(xiàn)出先增大后減小的趨勢,載流子濃度和遷移率則相反,除了退火時間為2h的薄膜試樣外薄膜禁帶寬度逐漸增大。通過對比,退火溫度為450℃,退火時間為1h的CuIn0.7Al0.3Se2薄膜更適合作為CIAS薄膜太陽電池的吸收層。
[Abstract]:Energy crisis and environmental pollution have greatly promoted the development of photovoltaic industry. Solar energy, as one of the new and most promising renewable energy sources, can effectively solve these two problems. The research of solar cells, a new technology for developing solar energy resources, has become a hot spot in photovoltaic field. Absorption layer is the core component of solar cell. Chalcopyrite crystal structure CuInSe2 (CIS) semiconductor thin films have attracted much attention because of their high conversion efficiency, strong radiation resistance and good stability. In this paper, CIAS thin films were prepared by doping Al elements partly instead of In, as the absorption layer of CIAS thin film solar cells, and the cost was reduced. The content of Al in the film is changed, the band gap is adjusted, and the solar spectrum is better coordinated. In this paper, CIAS thin films were prepared on ordinary glass substrates by vacuum evaporation, and were treated by vacuum selenization annealing. The effects of doping element Al content, annealing temperature and annealing time on the structure and properties of CIAS thin films were studied. The structure, morphology, composition, thickness and optoelectronic properties of CIAS thin films were studied by X-ray diffraction, scanning electron microscope (SEM) EDS spectrometer, step spectrometer, Hall effect instrument and UV-Vis near infrared spectrophotometer. The results show that the crystalline properties of CIAS thin films prepared by vacuum thermal evaporation are very complete, showing chalcopyrite crystal structure, and the (112) crystal plane preferential growth. Al partially replaces the In, in the CIS lattice to reduce the interplanar spacing. The conductive type of CIAS thin films is P type. The carrier concentration reaches 1020 orders of magnitude. With the decrease of Al content, the thin films exhibit uniform particle size, clear boundaries and dense structure. The deposited CuIn1-xAlxSe2 thin films were annealed by vacuum selenation, and 350 ~ 550 鈩，
本文編號：2261431
[Abstract]:Energy crisis and environmental pollution have greatly promoted the development of photovoltaic industry. Solar energy, as one of the new and most promising renewable energy sources, can effectively solve these two problems. The research of solar cells, a new technology for developing solar energy resources, has become a hot spot in photovoltaic field. Absorption layer is the core component of solar cell. Chalcopyrite crystal structure CuInSe2 (CIS) semiconductor thin films have attracted much attention because of their high conversion efficiency, strong radiation resistance and good stability. In this paper, CIAS thin films were prepared by doping Al elements partly instead of In, as the absorption layer of CIAS thin film solar cells, and the cost was reduced. The content of Al in the film is changed, the band gap is adjusted, and the solar spectrum is better coordinated. In this paper, CIAS thin films were prepared on ordinary glass substrates by vacuum evaporation, and were treated by vacuum selenization annealing. The effects of doping element Al content, annealing temperature and annealing time on the structure and properties of CIAS thin films were studied. The structure, morphology, composition, thickness and optoelectronic properties of CIAS thin films were studied by X-ray diffraction, scanning electron microscope (SEM) EDS spectrometer, step spectrometer, Hall effect instrument and UV-Vis near infrared spectrophotometer. The results show that the crystalline properties of CIAS thin films prepared by vacuum thermal evaporation are very complete, showing chalcopyrite crystal structure, and the (112) crystal plane preferential growth. Al partially replaces the In, in the CIS lattice to reduce the interplanar spacing. The conductive type of CIAS thin films is P type. The carrier concentration reaches 1020 orders of magnitude. With the decrease of Al content, the thin films exhibit uniform particle size, clear boundaries and dense structure. The deposited CuIn1-xAlxSe2 thin films were annealed by vacuum selenation, and 350 ~ 550 鈩，
本文編號：2261431
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