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筆式連續(xù)直寫的納米加工技術(shù)研究

發(fā)布時間:2018-09-05 14:52
【摘要】:微納技術(shù)是一個多學(xué)科交叉的高科技領(lǐng)域,展現(xiàn)出巨大的生命力,被認為是未來重要前沿科技之一。以掃描探針顯微鏡SPM為基礎(chǔ)的掃描探針加工技術(shù),是一種簡單而又靈活的微納結(jié)構(gòu)加工方法,近年來引起了廣泛的關(guān)注并得到了快速的發(fā)展。作為掃描探針加工的一種新技術(shù),納米鋼筆直寫技術(shù)FPN具有精度高、分辨率高、直接書寫、可控性好等特點,能夠?qū)⒍喾N墨水直接轉(zhuǎn)移到不同性質(zhì)的基底上,進而書寫出不同的加工圖案,加工出高精度的結(jié)構(gòu)器件,在生物、微電子領(lǐng)域等方面有著非常廣闊的應(yīng)用前景。針對目前對于FPN工作機理及加工工藝研究較少的現(xiàn)狀,本文首先對FPN工作過程中起主導(dǎo)作用的毛細力進行了研究,分析了毛細力的形成及其作用機理,為FPN的工作機理提供理論基礎(chǔ)。在此基礎(chǔ)上分析了FPN書寫過程中的三個主要步驟:針尖與基底間液橋的形成、墨水分子在液橋中的傳輸以及墨水分子在基底的擴散,并對針尖和基底接觸的作用力進行了建模,分析了針尖逐漸接觸基底的過程中接觸力大小的變化。其次利用原子力顯微鏡選用納米銀墨水在金基底上進行了FPN書寫實驗,分別探討了FPN書寫過程中各類書寫參數(shù)對點、線結(jié)構(gòu)尺寸的影響,其中影響點直徑的書寫參數(shù)為接觸時間,影響線結(jié)構(gòu)尺寸的參數(shù)主要包括探針孔徑、書寫模式、書寫速度、設(shè)定點以及施加的電壓等。在此基礎(chǔ)上,選擇最佳工藝參數(shù),即200nm孔徑的書寫探針,2μm/s的書寫速度以及0.2V的設(shè)定點,在接觸模式下實現(xiàn)了字母“S”“Z”“D”“X”及五角星等規(guī)則圖案的書寫。最后在非導(dǎo)電云母基底上利用FPN技術(shù)書寫出微納尺度的線結(jié)構(gòu),利用原子力顯微鏡AFM和掃描電子顯微鏡SEM對線結(jié)構(gòu)的形貌進行了表征。在此基礎(chǔ)上,結(jié)合Keithley4200SCS半導(dǎo)體參數(shù)分析儀和Cascade M150探針臺,采用二探針法和四探針法分別對FPN書寫線結(jié)構(gòu)的電學(xué)特性進行了測量。和二探針相比較,四探針法能精確地測量單根線結(jié)構(gòu)的電阻率,測得書寫線結(jié)構(gòu)的電阻率為4.82μΩ·cm,略大于銀的體電阻率,這可能是由于微納尺度線結(jié)構(gòu)產(chǎn)生的表面散射效應(yīng)增加了電阻率的值。
[Abstract]:Micro-nano technology is a multi-disciplinary high-tech field, showing great vitality, is considered as one of the important frontier science and technology in the future. Scanning probe processing based on scanning probe microscope (SPM) is a simple and flexible fabrication method of micro / nano structure, which has attracted wide attention and been developed rapidly in recent years. As a new technology of scanning probe processing, FPN has the characteristics of high precision, high resolution, direct writing, good controllability, and can transfer many kinds of ink directly to different kinds of substrates. And then write out different processing patterns, processing high-precision structural devices, which has a very broad application prospects in biology, microelectronics and other fields. In view of the lack of research on the working mechanism and processing technology of FPN, the capillary force, which plays a leading role in the process of FPN, is studied in this paper, and the formation and mechanism of capillary force are analyzed. It provides a theoretical basis for the working mechanism of FPN. On this basis, three main steps in the writing process of FPN are analyzed: the formation of liquid bridge between the tip and substrate, the transmission of ink molecules in the liquid bridge and the diffusion of ink molecules in the substrate, and the interaction force between the tip and the substrate is modeled. The change of the contact force during the gradual contact between the tip and the substrate is analyzed. Secondly, the FPN writing experiment was carried out on the gold substrate with nano-silver ink selected by AFM. The influence of various writing parameters on the points and the size of the line structure in the FPN writing process was discussed respectively. The writing parameters affecting the diameter of the point are contact time, and the parameters affecting the size of the line structure include probe aperture, writing mode, writing speed, setting point and applied voltage, etc. On this basis, the optimal process parameters, namely the writing speed of 2 渭 m / s of 200nm aperture and the setting point of 0.2 V, are selected to realize the writing of regular patterns such as "S" Z "," D "X" and "pentagram" in contact mode. Finally, the micronanoscale linear structure was written on the non-conductive mica substrate by FPN technique. The morphology of the linear structure was characterized by atomic force microscope (AFM) and scanning electron microscope (SEM). On this basis, combining with Keithley4200SCS semiconductor parameter analyzer and Cascade M150 probe table, the electrical characteristics of FPN writing line structure were measured by two probe method and four probe method, respectively. Compared with the two probes, the four-probe method can accurately measure the resistivity of a single wire structure, and the resistivity of the writing line structure is 4.82 渭 惟 cm, slightly larger than the bulk resistivity of silver. This may be due to the surface scattering effect resulting from the micro- and nanoscale line structure, which increases the resistivity value.
【學(xué)位授予單位】:蘇州大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2015
【分類號】:TS951.13;TB383.1

【參考文獻】

相關(guān)碩士學(xué)位論文 前1條

1 朱吉牧;基于原子力顯微鏡的納米加工技術(shù)及軟件系統(tǒng)研究[D];浙江大學(xué);2005年

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本文編號:2224610

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