MFIS結(jié)構(gòu)電容器的制備及其中子輻射效應(yīng)研究
發(fā)布時(shí)間：2018-08-24 11:11
【摘要】：具有金屬-鐵電-絕緣-半導(dǎo)體(Metal-Ferroelectric-Insulator-Semiconductor,MFIS)結(jié)構(gòu)的鐵電場(chǎng)效應(yīng)晶體管(Ferroelectric Field Effect Transistor,FeFET)因具有存儲(chǔ)結(jié)構(gòu)簡(jiǎn)單、高存儲(chǔ)密度、低功耗、高存取速度、抗輻射和非破壞性讀出等優(yōu)點(diǎn),被認(rèn)為是下一代新型存儲(chǔ)器的發(fā)展趨勢(shì),在未來(lái)空天飛行器上有著非常誘人的應(yīng)用前景。然而空間環(huán)境是一個(gè)復(fù)雜交錯(cuò)的綜合輻射環(huán)境,存在于空間輻射環(huán)境中的X射線、伽馬射線、中子流以及?粒子等射線粒子,由于各自的電荷、質(zhì)量和能量不同,它們對(duì)鐵電薄膜的作用效應(yīng)也不相同,造成的損傷程度也不一樣。因此清晰地了解鐵電場(chǎng)效應(yīng)晶體管的抗輻射性能機(jī)理是非常有必要的。本文以MFIS型鐵電場(chǎng)效應(yīng)晶體管的原理型器件—MFIS電容為研究對(duì)象,其中絕緣層為SrTiO3(STO),鐵電層為Bi3.15Nd0.85Ti3O12(BNT),通過(guò)溶膠-凝膠法制備出了Pt/BNT/STO/Si結(jié)構(gòu)電容器,研究了不同注量中子輻射對(duì)Pt/BNT/STO/Si結(jié)構(gòu)電容器微觀結(jié)構(gòu)和電學(xué)性能的影響。主要?jiǎng)?chuàng)新性研究成果如下:(1)采用溶膠-凝膠法在p-Si(100)上依次沉積了STO薄膜和BNT薄膜,鍍上Pt電極后得到Pt/BNT/STO/Si結(jié)構(gòu)電容的結(jié)構(gòu)性能進(jìn)行了測(cè)試分析。發(fā)現(xiàn)我們制備的STO薄膜表現(xiàn)出了極好的介電性能和絕緣性能。Pt/BNT/STO/Si結(jié)構(gòu)在飽和時(shí)候的窗口電壓可達(dá)2.5 V,漏電流密度低于10-8 A/cm2,保持時(shí)間達(dá)到了7.5 h。性能良好的Pt/BNT/STO/Si結(jié)構(gòu)電容器為中子輻射實(shí)驗(yàn)的順利開(kāi)展奠定了基礎(chǔ)。(2)經(jīng)1.0×1015 n/cm2和1.0×1014 n/cm2注量中子輻射后,對(duì)Pt/BNT/STO/Si結(jié)構(gòu)電容器的微觀結(jié)構(gòu)和電學(xué)性能進(jìn)行了表征,對(duì)比分析了輻射前后結(jié)構(gòu)與性能的變化。在晶體結(jié)構(gòu)方面,注量為1.0×1015 n/cm2的中子輻射對(duì)BNT薄膜的晶體結(jié)構(gòu)改變不大,輻射后依然保持鉍層狀鈣鈦礦結(jié)構(gòu);在電學(xué)性能方面,Pt/BNT/STO/Si結(jié)構(gòu)電容器的存儲(chǔ)窗口電壓、漏電流密度以及保持性能均隨著注量的增大而發(fā)生了不同程度的退化。分析認(rèn)為中子輻射誘發(fā)的氧空位在鐵電薄膜內(nèi)部的遷移是導(dǎo)致Pt/BNT/STO/Si結(jié)構(gòu)電容器性能退化的主要的原因。
[Abstract]:Ferroelectric field effect transistor (Ferroelectric Field Effect Transistor,FeFET) with metal-ferroelectric-insulation-semiconductor (Metal-Ferroelectric-Insulator-Semiconductor,MFIS) structure has the advantages of simple storage structure, high memory density, low power consumption, high access speed, radiation resistance and non-destructive readout. It is considered to be the development trend of the next generation memory, and it has a very attractive application prospect in the future. However, the space environment is a complex and interlaced integrated radiation environment. The X ray, gamma ray, neutron flow and? Due to the difference of charge, mass and energy, the effect of particles on ferroelectric thin films is different, and the damage degree is also different. Therefore, it is necessary to clearly understand the radiation resistance mechanism of ferroelectric field effect transistors. In this paper, the principle device of MFIS ferroelectric field effect transistor (MFIS) is used as the research object, in which the insulating layer is SrTiO3 (STO), ferroelectric layer and Bi3.15Nd0.85Ti3O12 (BNT), is used to fabricate the Pt/BNT/STO/Si structure capacitor by sol-gel method. The effects of neutron radiation of different Fluence on the microstructure and electrical properties of Pt/BNT/STO/Si structure capacitors were studied. The main innovative research results are as follows: (1) STO and BNT thin films were deposited on p-Si (100) by sol-gel method, and the structural properties of Pt/BNT/STO/Si structure capacitors were measured and analyzed by Pt electrode plating. It is found that the STO thin films exhibit excellent dielectric properties and insulation properties. The window voltage of PtP / BNT / STO / Si structure can reach 2.5 V, the leakage current density is less than 10-8 A / cm ~ 2, and the retention time is 7.5 h. The Pt/BNT/STO/Si capacitors with good performance have laid the foundation for the smooth development of neutron radiation experiments. (2) after neutron radiation of 1.0 脳 1015 n/cm2 and 1.0 脳 1014 n/cm2, the microstructure and electrical properties of Pt/BNT/STO/Si structure capacitors are characterized. The changes of structure and properties before and after radiation were compared and analyzed. In terms of crystal structure, neutron radiation with a flux of 1.0 脳 1015 n/cm2 has little effect on the crystal structure of BNT thin films, and remains the bismuth layered perovskite structure after radiation. Leakage current density and retention performance degenerate with the increase of flux. It is considered that the migration of oxygen vacancies induced by neutron radiation in ferroelectric thin films is the main reason for the degradation of the performance of Pt/BNT/STO/Si structure capacitors.
【學(xué)位授予單位】：湘潭大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TM53;TB383.2
本文編號(hào)：2200641
[Abstract]:Ferroelectric field effect transistor (Ferroelectric Field Effect Transistor,FeFET) with metal-ferroelectric-insulation-semiconductor (Metal-Ferroelectric-Insulator-Semiconductor,MFIS) structure has the advantages of simple storage structure, high memory density, low power consumption, high access speed, radiation resistance and non-destructive readout. It is considered to be the development trend of the next generation memory, and it has a very attractive application prospect in the future. However, the space environment is a complex and interlaced integrated radiation environment. The X ray, gamma ray, neutron flow and? Due to the difference of charge, mass and energy, the effect of particles on ferroelectric thin films is different, and the damage degree is also different. Therefore, it is necessary to clearly understand the radiation resistance mechanism of ferroelectric field effect transistors. In this paper, the principle device of MFIS ferroelectric field effect transistor (MFIS) is used as the research object, in which the insulating layer is SrTiO3 (STO), ferroelectric layer and Bi3.15Nd0.85Ti3O12 (BNT), is used to fabricate the Pt/BNT/STO/Si structure capacitor by sol-gel method. The effects of neutron radiation of different Fluence on the microstructure and electrical properties of Pt/BNT/STO/Si structure capacitors were studied. The main innovative research results are as follows: (1) STO and BNT thin films were deposited on p-Si (100) by sol-gel method, and the structural properties of Pt/BNT/STO/Si structure capacitors were measured and analyzed by Pt electrode plating. It is found that the STO thin films exhibit excellent dielectric properties and insulation properties. The window voltage of PtP / BNT / STO / Si structure can reach 2.5 V, the leakage current density is less than 10-8 A / cm ~ 2, and the retention time is 7.5 h. The Pt/BNT/STO/Si capacitors with good performance have laid the foundation for the smooth development of neutron radiation experiments. (2) after neutron radiation of 1.0 脳 1015 n/cm2 and 1.0 脳 1014 n/cm2, the microstructure and electrical properties of Pt/BNT/STO/Si structure capacitors are characterized. The changes of structure and properties before and after radiation were compared and analyzed. In terms of crystal structure, neutron radiation with a flux of 1.0 脳 1015 n/cm2 has little effect on the crystal structure of BNT thin films, and remains the bismuth layered perovskite structure after radiation. Leakage current density and retention performance degenerate with the increase of flux. It is considered that the migration of oxygen vacancies induced by neutron radiation in ferroelectric thin films is the main reason for the degradation of the performance of Pt/BNT/STO/Si structure capacitors.
【學(xué)位授予單位】：湘潭大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TM53;TB383.2
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