【摘要】：近年來(lái),隨著MEMS技術(shù)的發(fā)展,市場(chǎng)上出現(xiàn)了眾多的MEMS器件和產(chǎn)品,但是如何給MEMS器件供電成了目前需要解決的問(wèn)題。壓電薄膜可以實(shí)現(xiàn)振動(dòng)能到電能的轉(zhuǎn)換,這引起了人們對(duì)壓電薄膜材料在環(huán)境能量收集器中應(yīng)用的關(guān)注。高性能的MEMS器件對(duì)所用材料的性能和結(jié)構(gòu)都有很高的要求。PZT基壓電薄膜由于其優(yōu)異的壓電、鐵電和介電性能,成為了目前能量收集MEMS應(yīng)用的研究熱點(diǎn)。本論文利用磁控濺射技術(shù)制備高質(zhì)量的PZT基壓電薄膜,探索薄膜的外延生長(zhǎng)工藝并進(jìn)行結(jié)構(gòu)、性能表征,選擇弛豫鐵電體鈮鎳酸鉛(Pb(Ni1/3Nb2/3)O3,PNN)作為固溶摻入,研究PZT-PNN體系的結(jié)構(gòu)和性能隨PNN含量的變化關(guān)系。利用磁控濺射技術(shù)制備了PZT(50/50)薄膜。在用傳統(tǒng)陶瓷靶材濺射薄膜的基礎(chǔ)上,提出了使用活性較高的粉體靶材來(lái)濺射制備PZT壓電薄膜。在此基礎(chǔ)上,在(111)Pt/Ti O2/Si O2/Si襯底上獲得隨機(jī)取向的多晶薄膜,并且沒(méi)發(fā)現(xiàn)雜相。襯底溫度的升高有利于提高結(jié)晶性能,獲得表面平整的薄膜,但是隨之繼續(xù)升高導(dǎo)致Pb O嚴(yán)重?fù)]發(fā),降低了薄膜的壓電、鐵電性能。Pb O含量的增加有利于鈣鈦礦結(jié)構(gòu)的形成,但是過(guò)高的百分比使PZT薄膜中形成了多數(shù)氧化物而影響了PZT薄膜的結(jié)構(gòu)。最佳生長(zhǎng)條件為Pb O過(guò)量10mol.%、750℃、0.6Pa、Ar/O=20/1。在單晶(001)Sr Ti O3和(001)Mg O襯底上沉積出外延性良好的薄膜。在Mg O襯底上獲得具有壓縮應(yīng)力的外延薄膜,顯示出更強(qiáng)的向上自發(fā)極化現(xiàn)象,具有明顯的極化反轉(zhuǎn)特性和壓電響應(yīng),并且認(rèn)為這種性質(zhì)是由薄膜內(nèi)部較大的外延壓縮應(yīng)力所導(dǎo)致的。該薄膜還具有較好的宏觀鐵電性能,Pr為100.1μC/cm2。利用磁控濺射技術(shù)制備了(1-x)PZT-x PNN(x=0.05,0.10,0.15)薄膜。研究發(fā)現(xiàn)不同PNN摻入量的樣品都形成了具有鈣鈦礦結(jié)構(gòu)的PZT-PNN固溶體系。隨著PNN含量的增加,PZT-PNN薄膜的結(jié)構(gòu)四方度增加。在x=0.05的薄膜結(jié)構(gòu)位于該體系的準(zhǔn)同型相界(MPB)附近,其MPB與陶瓷材料的偏差是由于內(nèi)部殘余應(yīng)力導(dǎo)致的。薄膜晶粒生長(zhǎng)均勻,表面致密平整,隨著PNN含量的增加,晶粒尺寸和表面粗糙度都逐漸增大。x=0.05的薄膜顯示出趨近于飽和的電滯回線和較好的介電性,剩余極化強(qiáng)度Pr約為99.1μC/cm2,飽和極化強(qiáng)度PS約為124μC/cm2,矯頑電壓EC約為57.5k V/cm,介電常數(shù)為2030。壓電性能測(cè)試結(jié)果表明在0.15PZT-0.05PNN薄膜中其面外極化性能較好,具有最佳的壓電響應(yīng)特性。
[Abstract]:In recent years, with the development of MEMS technology, there are many MEMS devices and products in the market. However, how to supply power to MEMS devices has become a problem to be solved. Piezoelectric film can realize the conversion of vibration energy to electric energy, which has attracted people's attention in the application of piezoelectric film material in environmental energy collector. High performance MEMS devices have high requirements for the properties and structures of the materials used. PZT-based piezoelectric thin films have become a hot research area in energy collection MEMS applications due to their excellent piezoelectric, ferroelectric and dielectric properties. In this paper, high quality PZT based piezoelectric thin films were prepared by magnetron sputtering technique. The epitaxial growth process, structure and properties of the thin films were investigated. The relaxor ferroelectric (Pb (Ni1/3Nb2/3) O 3 PNN) was selected as solid solution doping. The relationship between structure and properties of PZT-PNN system with PNN content was studied. PZT (50 / 50) thin films were prepared by magnetron sputtering. On the basis of the traditional ceramic target sputtering film, the PZT piezoelectric thin film was prepared by sputtering the high active powder target. On this basis, random oriented polycrystalline films were obtained on (111) Pt/Ti O2/Si O2/Si substrates, and no heterophases were found. The increase of substrate temperature can improve the crystallization property and obtain the flat surface film. However, the increasing of the substrate temperature leads to the serious volatilization of PBO and the decrease of the piezoelectric of the film. The increase of ferroelectric property. PbO content is beneficial to the formation of perovskite structure. However, too high a percentage of the PZT films formed most of the oxides, which affected the structure of the PZT films. The optimum growth conditions were as follows: PbO excess of 10 mol 路L ~ (-1) at 750 鈩，

本文編號(hào)：2193844