【摘要】：衛(wèi)星、雷達(dá)等微波通信系統(tǒng)中,微波負(fù)載等元器件的高頻化、小型化和集成化一直都是國(guó)內(nèi)外研究的熱點(diǎn)方向;TaN薄膜因其優(yōu)秀的物理化學(xué)特性而成為下一代射頻及微波頻域阻抗和負(fù)載的佼佼者;越來(lái)越多的研究者不斷嘗試把光刻工藝和薄膜沉積技術(shù)相結(jié)合,從而實(shí)現(xiàn)微波元器件的薄膜化、集成化�；谝陨媳尘�,本論文研究了在鎳鋅鐵氧體基片上,TaN薄膜以及基于TaN薄膜的微波負(fù)載和集成微帶隔離器的理論設(shè)計(jì)和制備工藝。探究了實(shí)驗(yàn)工藝參數(shù)對(duì)TaN薄膜多方面性能的影響;理論設(shè)計(jì)與軟件仿真了微波集成組件,實(shí)際制備了能工作于高頻段的TaN薄膜微波負(fù)載;并首次引入AlN薄膜緩沖層改善基片的表面特性和散熱性能,從而有效的提高了TaN薄膜微波負(fù)載的功率性能;仿真設(shè)計(jì)并制備了微帶集成隔離器,具體如下:首先,在鎳鋅鐵氧體基片上利用直流反應(yīng)磁控濺射工藝制備性能可靠?jī)?yōu)良的TaN薄膜。主要探究了濺射氣壓、濺射時(shí)間、N2分壓、靶基距離、濺射功率等工藝因素對(duì)TaN薄膜微觀相結(jié)構(gòu)、方塊電阻、電阻溫度系數(shù)(TCR)等主要性能參數(shù)指標(biāo)的影響。經(jīng)過(guò)大量且系統(tǒng)的實(shí)驗(yàn),總結(jié)規(guī)律并制定出了合適的工藝參數(shù):在3.42×10-5-5.65×10-5Pa的背底真空度下,濺射氣壓在0.61-0.65Pa之間,當(dāng)濺射Ar流量為50sccm,N2流量為3sccm,濺射時(shí)間1200s,靶基距離7cm,濺射功率50W,所得的薄膜方阻為46-52Ω/□,TCR絕對(duì)值為48-62ppm/℃,厚度在293nm到315nm之間。其次,在20-40GHz頻率范圍內(nèi),設(shè)計(jì)了尺寸為2mm×2mm×0.5mm的TaN薄膜微波負(fù)載模型,通過(guò)HFSS軟件仿真并優(yōu)化,得到在頻率范圍內(nèi)電壓駐波比VSWR小于1.3,回波損耗S11低于-20dB,Z實(shí)部在41-54Ω之間。結(jié)合直流磁控濺射鍍膜與光刻等工藝,制備得到TaN薄膜微波負(fù)載,經(jīng)測(cè)試,薄膜微波負(fù)載VSWR小于1.5,回波損耗S11小于-13dB,阻抗變化在40-70Ω,功率密度為0.91W/mm2。再者,由于鎳鋅鐵氧體基片上制作的TaN薄膜電阻器,受到鐵氧體表面及內(nèi)部結(jié)構(gòu)特性差以及導(dǎo)熱系數(shù)低的影響,功率密度往往達(dá)不到實(shí)際應(yīng)用的要求,實(shí)驗(yàn)利用中頻磁控濺射,在鐵氧體基片與TaN薄膜電阻器之間鍍上一層1.5μm厚的AlN薄膜緩沖層,有效的改善了基片表面平整度及散熱能力,從而較為顯著的提高了TaN薄膜微波負(fù)載的功率性能,經(jīng)測(cè)試可以達(dá)到3.76W/mm2。最后,在微帶環(huán)行器場(chǎng)理論和Y結(jié)環(huán)行器設(shè)計(jì)理論基礎(chǔ)上,利用HFSS軟件設(shè)計(jì)并仿真了微帶環(huán)行器和端接微波負(fù)載的微帶集成隔離器,制作并測(cè)試了隔離器性能。在20-30GHz的仿真頻率范圍內(nèi),環(huán)行器回波損耗S11-15dB,插入損耗S12在-1dB左右,隔離度S21-14dB;在10-14GHz仿真頻率范圍內(nèi),隔離器S11-14dB,S12在-1dB左右,S21-15dB;基于理論設(shè)計(jì)和模擬結(jié)果指導(dǎo),采用多次光刻和多層薄膜制備等工藝,成功制作出薄膜負(fù)載與隔離器組件,測(cè)試結(jié)果表明制作的隔離器參數(shù)為:S11-10.5dB,S12-3dB,S21-10dB,接近理論設(shè)計(jì)結(jié)果。
[Abstract]:In satellite, radar and other microwave communication systems, the high frequency of components such as microwave load, Miniaturization and integration have always been the hot research directions at home and abroad. Tan thin films have become the next generation of RF and microwave frequency domain impedance and load because of their excellent physical and chemical properties. More and more researchers try to combine lithography and thin film deposition technology to realize the thinning and integration of microwave components. Based on the above background, the theoretical design and fabrication process of tin thin film on Ni-Zn ferrite substrate and microwave loaded and integrated microstrip isolator based on TaN thin film have been studied in this paper. The effects of experimental process parameters on the properties of TaN thin films are investigated. Microwave integrated modules are designed and simulated in theory and software. Microwave loading of TaN thin films which can work in high frequency band is actually fabricated. The AlN film buffer layer is introduced to improve the surface characteristics and heat dissipation performance of the substrate for the first time, thus effectively improving the power performance of the microwave load of the TaN thin film. The microstrip integrated isolator is designed and fabricated by simulation. The main results are as follows: first, TaN thin films with good properties were prepared on Ni-Zn ferrite substrates by DC reactive magnetron sputtering. The effects of sputtering pressure, sputtering time and N _ 2 partial pressure, target distance and sputtering power on the microstructure, block resistance, resistance temperature coefficient (TCR) of TaN thin films were investigated. After a large number of systematic experiments, the rules are summarized and the appropriate technological parameters are worked out: the sputtering pressure is between 0.61-0.65Pa and 0.61-0.65Pa under the condition of 3.42 脳 10-5-5.65 脳 10-5Pa vacuum. When the ar flux is 3sccm, the sputtering time is 1200s, the target distance is 7cm, the sputtering power is 50W, the square resistance of the film is 46-52 惟 / -TCR is 48-62ppm/ 鈩，

本文編號(hào)：2150160