【摘要】：一維納米材料由于其特殊而優(yōu)異的光電性能和在納米光電子器件領(lǐng)域的潛在應(yīng)用而受到人們的廣泛關(guān)注。影響其優(yōu)異光電性能的因素有很多如材料結(jié)構(gòu)、形貌、缺陷、晶格振動(dòng)等,其中材料的晶格振動(dòng)和光電特性密切相關(guān),對(duì)材料的物性甚至基于材料的器件的性能都有著很重要的影響。晶格振動(dòng)也是研究固體宏觀性質(zhì)和微觀過(guò)程的重要基礎(chǔ)；而拉曼散射是研究晶格振動(dòng)特性十分重要的手段。通過(guò)拉曼光譜可以得到材料的對(duì)稱性,組分,晶格動(dòng)力學(xué),結(jié)構(gòu)相變,應(yīng)力以及態(tài)密度等信息。本論文以ZnSe, Ge, CdSe為原材料,通過(guò)一步熱蒸發(fā)法分別制備出ZnSe納米線、ZnSe納米帶、Ge/GeSe異質(zhì)結(jié)納米線,并用變溫拉曼譜研究其振動(dòng)特性。本文主要的內(nèi)容如下：1.闡述了拉曼光譜的基本原理,綜述了它在在一維納米線的振動(dòng)特性研究的進(jìn)展。2.以ZnSe粉末為原材料,利用一步熱蒸發(fā)法合成了ZnSe納米線,利用變溫拉曼譜研究其振動(dòng)特性。結(jié)果發(fā)現(xiàn),ZnSe納米線的TO和LO振動(dòng)模都隨著溫度的升高出現(xiàn)紅移和展寬。一些倍頻聲學(xué)模式和多聲子散射模式僅在高溫下出現(xiàn)。TA(L)模的散射強(qiáng)度隨溫度的升高而升高,而表面模在溫度高于296 K時(shí)消失。3.在上述工作的基礎(chǔ)上,以ZnSe粉末為原材料,也制備出ZnSe納米帶。建立了Gruneisen常數(shù)與振動(dòng)模式之間的定量關(guān)系,得出ZnSe納米帶的Gruneisen常數(shù)。進(jìn)一步計(jì)算得出ZnSe納米帶的熱膨脹系數(shù)。4.以Ge和CdSe(或ZnSe)粉末為原材料,合成了Ge/GeSe異質(zhì)結(jié)納米線,通過(guò)變溫拉曼譜研究了Ge/GeSe異質(zhì)結(jié)納米線中的聲子動(dòng)力學(xué)特性。結(jié)果表明,聲子行為強(qiáng)烈依賴于溫度的變化。通過(guò)XRD衍射花樣圖和拉曼譜計(jì)算出了異質(zhì)結(jié)納米線中的應(yīng)力。在異質(zhì)結(jié)納米線中也發(fā)現(xiàn)了Ge亞納米線的聲子局域效應(yīng)。
[Abstract]:One-dimensional nanomaterials have attracted wide attention due to their special and excellent optoelectronic properties and potential applications in the field of nano-optoelectronic devices. There are many factors affecting its excellent photoelectric properties, such as the structure, morphology, defects, lattice vibration, etc. Among them, the lattice vibration and the photoelectric properties of the materials are closely related. It has an important effect on the physical properties of materials and even on the properties of devices based on materials. Lattice vibration is also an important basis for studying macroscopic properties and microscopic processes of solid, and Raman scattering is a very important means to study the characteristics of lattice vibration. The information of symmetry, composition, lattice dynamics, structural phase transition, stress and density of states can be obtained by Raman spectroscopy. In this thesis, ZnSe nanowires (ZnSe / GeSe heterojunction nanowires) were prepared by one step thermal evaporation method using ZnSee, GeSe and CdSe as raw materials. The vibrational characteristics of ZnSe nanowires were studied by using variable-temperature Raman spectroscopy. The main contents of this paper are as follows: 1. The basic principle of Raman spectroscopy and its progress in the study of vibration characteristics of one-dimensional nanowires are reviewed in this paper. ZnSe nanowires were synthesized from ZnSe powder by one step thermal evaporation method. The vibrational characteristics of ZnSe nanowires were studied by variable temperature Raman spectroscopy. The results show that the vibration modes of to and Lo of ZnSe nanowires are red-shifted and broadened with the increase of temperature. Some frequency-doubled acoustic modes and multi-phonon scattering modes only increase the scattering intensity of the .TA (L) mode at high temperature, while the surface mode disappears at 296K. Based on the above work, ZnSe nanobelts were also prepared using ZnSe powder as raw material. The quantitative relationship between the Gruneisen constant and the vibrational mode was established, and the Gruneisen constant of ZnSe nanobelts was obtained. The coefficient of thermal expansion of ZnSe nanobelts was further calculated. GE / GeSe heterojunction nanowires were synthesized by using GE and CdSe (or ZnSe) powders as raw materials. The phonon dynamics of GE / GeSe heterojunction nanowires were studied by means of variable temperature Raman spectroscopy. The results show that the phonon behavior is strongly dependent on the temperature change. The stress in heterojunction nanowires was calculated by XRD diffraction patterns and Raman spectra. The phonon localization effect of GE nanowires was also found in heterojunction nanowires.
【學(xué)位授予單位】：東華大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O614.241;TB383.1

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本文編號(hào)：2132179