本文選題：透明導(dǎo)電薄膜 + 氧化鋅��； 參考：《濟(jì)南大學(xué)》2015年碩士論文

【摘要】：透明導(dǎo)電氧化物薄膜是新型光電薄膜中極為重要的一類,其在太陽(yáng)光譜可見(jiàn)光范圍內(nèi)透明,對(duì)紅外光有較強(qiáng)的反射,且電導(dǎo)率較大,因而是一種比較理想的透明電極材料,已在太陽(yáng)能電池、液晶顯示器、氣體傳感器、智能玻璃等領(lǐng)域得到廣泛應(yīng)用。本論文以氧化鋅基透明導(dǎo)電薄膜及其在鈣鈦礦太陽(yáng)能電池中的應(yīng)用為研究?jī)?nèi)容,綜合采用脈沖激光沉積技術(shù),熱蒸發(fā)真空鍍膜技術(shù),及水熱技術(shù),制備了鋁、氟摻雜氧化鋅(AZO、FZO)及金屬/氧化鋅復(fù)合薄膜(Cu/FZO、Ag NW/FZO),系統(tǒng)研究了其透明導(dǎo)電性能,并將Ag NW/FZO薄膜應(yīng)用到鈣鈦礦電池中,初步研究了其對(duì)電池性能的影響。主要研究?jī)?nèi)容及結(jié)果如下:1、研究了PLD法制備的Al、F施主摻雜ZnO(AZO、FZO)薄膜的透明導(dǎo)電性能。以含有IIIA族/VII族元素(Al、F等)的化合物為施主摻雜劑對(duì)氧化鋅靶材進(jìn)行摻雜,研究了PLD生長(zhǎng)條件,如摻量、氣壓、溫度等,對(duì)AZO、FZO薄膜生長(zhǎng)及透明導(dǎo)電性能的影響。最優(yōu)生長(zhǎng)條件下,玻璃襯底上AZO薄膜電阻率為2.6×10-4Ω?cm,對(duì)應(yīng)的載流子濃度為8.4×1020cm-3,霍爾遷移率28.5cm2/Vs,在可見(jiàn)光范圍內(nèi)的透光率超過(guò)85%。在PET襯底上FZO薄膜最優(yōu)電阻率為2.02×10-3Ω?cm,對(duì)應(yīng)的載流子濃度為2.47×1020cm-3,霍爾遷移率達(dá)到12.5 cm2V-1s-1,透過(guò)率超過(guò)90%。2、綜合利用PLD法和熱蒸發(fā)法制備了柔性Cu/FZO復(fù)合薄膜,并研究了其透明導(dǎo)電機(jī)理。在柔性襯底上沉積不同厚度銅膜,在其上生長(zhǎng)一層FZO薄膜形成Cu/FZO復(fù)合薄膜。系統(tǒng)研究了金屬銅層厚度對(duì)復(fù)合薄膜的性能的影響。實(shí)驗(yàn)發(fā)現(xiàn),隨著銅層厚度的增加(3→50 nm),Cu/FZO復(fù)合薄膜電阻率不斷減小(4×10-3→2.2×10-5Ω?cm),其透過(guò)率會(huì)隨之下降(80%→5%)�；魻栃�(yīng)結(jié)果證實(shí),復(fù)合薄膜電阻率下降主要是由于薄膜載流子濃度的增加,這是由于費(fèi)米能級(jí)的不同,銅層和FZO層接觸時(shí),電子從銅層流向FZO層引起的。3、綜合利用PLD法和水熱法制備了柔性Ag NW/FZO復(fù)合薄膜。研究了銀納米線的長(zhǎng)度、旋涂工藝對(duì)單層Ag NW薄膜透明導(dǎo)電性能的影響。實(shí)驗(yàn)發(fā)現(xiàn),長(zhǎng)銀納米線(約60 um)比短銀納米線(約15 um)更適合制備透明導(dǎo)電薄膜;當(dāng)懸浮液濃度為4 mg/m L時(shí),銀納米線薄膜面電阻為19.2歐姆/平方,透光率達(dá)到90.14%,高于ITO(89.8%)。Ag NW薄膜復(fù)合FZO層后在保持其透明導(dǎo)電性能的同時(shí),還具有較高的霧度(36.5%-38%),其機(jī)械性能也有所提高。4、將具有高透明導(dǎo)電性能、高霧度的Ag NW/FZO復(fù)合薄膜應(yīng)用到鈣鈦礦薄膜電池。采用兩步法組裝了具有Ag NW/FZO|TiO2|甲胺鉛碘|HTM|金屬電極結(jié)構(gòu)的鈣鈦礦電池,初步探索了電池器件的制備工藝。Ag NW/FZO電極與傳統(tǒng)的FTO電極相比,鈣鈦礦電池效率從2.95%提高到4.1%,主要是由于Ag NW/FZO電極具有較高的霧度,增加了光程,提高了光的利用率。
[Abstract]:Transparent conductive oxide thin film is an important kind of new optoelectronic thin film. It is transparent in visible range of solar spectrum, has strong reflection to infrared light, and has high conductivity, so it is an ideal transparent electrode material. Has been widely used in solar cells, liquid crystal displays, gas sensors, smart glass and other fields. In this paper, zinc oxide based transparent conductive thin films and their applications in perovskite solar cells were studied. Aluminum was prepared by pulsed laser deposition, thermal evaporation vacuum coating and hydrothermal technology. The transparent conductive properties of fluorine-doped zinc oxide (AZO) and metal / zinc oxide composite films (Cu / FZO / Ag NW / FZO) were systematically studied. The effects of Ag NW / FZO thin films on the performance of perovskite batteries were studied. The main contents and results are as follows: 1. The transparent conductivity of Alf donor-doped ZnO (AZOOFZO) thin films prepared by PLD method is studied. Zinc oxide targets were doped with compounds containing IIIA / VII group elements (Alf, et al.) as donor dopants. The effects of PLD growth conditions, such as volume, air pressure and temperature, on the growth and transparent conductivity of AZOFZO thin films were investigated. Under the optimum growth conditions, the resistivity of AZO thin films on glass substrates is 2.6 脳 10 ~ (-4) 惟 ~ (-1) cm, corresponding carrier concentration is 8.4 脳 10 ~ (20) cm ~ (-3), Hall mobility is 28.5 cm ~ (2) / V _ s, and the transmittance is over 85 cm ~ (-2) in the visible range. The optimum resistivity of FZO thin films on PET substrates is 2.02 脳 10-3 惟 路cm, corresponding carrier concentration is 2.47 脳 1020cm-3, Hall mobility is 12.5 cm2V-1s-1 and transmittance is over 90.2.The flexible CuFZO composite films have been prepared by PLD method and thermal evaporation method, and their transparent conductive mechanism has been studied. Copper films with different thickness were deposited on flexible substrates, on which a layer of FZO thin films was grown to form Cu / FZO composite films. The effect of the thickness of copper layer on the properties of the composite film was systematically studied. It is found that the resistivity of Cu / FZO composite films decreases with the increase of copper thickness (3 ~ 50 nm) (2. 2 脳 10 ~ (-5) 惟 路cm ~ (-1), and the transmittance decreases (80% ~ 5%) with the increase of copper layer thickness (3 ~ 50 nm). The Hall effect results show that the decrease in resistivity of composite films is mainly due to the increase of carrier concentration in the films, which is due to the difference of Fermi energy levels when the copper layer and the FZO layer are in contact with each other. Flexible Ag NW / FZO composite films were prepared by PLD method and hydrothermal method. The effects of the length of silver nanowires and the spin-coating process on the transparent conductivity of Ag NW thin films were investigated. It was found that long silver nanowires (about 60um) were more suitable than short silver nanowires (about 15um) to prepare transparent conductive films, and the surface resistance of silver nanowires was 19.2 ohm / square when suspension concentration was 4 mg/m / L. The transmittance reached 90.14, which is higher than that of ITO (89.8%). Ag-NW thin film composite FZO film, while keeping its transparent conductivity, it also has a higher fog (36.5% -38%), and its mechanical property is also improved .4, which will have high transparent conductivity. High foggy Ag NW / FZO composite thin films are applied to perovskite thin film batteries. Perovskite batteries with the structure of Ag-NW / FZO / FZO / Ag-NW / FZO / HTM metal electrode were fabricated and compared with the conventional FTO electrode. The efficiency of perovskite cell is increased from 2.95% to 4.1, mainly due to the high fog of Ag NW / FZO electrode, which increases the optical path and the utilization rate of light.
【學(xué)位授予單位】：濟(jì)南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2

【共引文獻(xiàn)】

相關(guān)期刊論文 前3條

1 劉作蓮;王文j;楊為家;林云昊;錢慧榮;周仕忠;李國(guó)強(qiáng);;脈沖激光沉積GaN薄膜的研究進(jìn)展[J];半導(dǎo)體光電;2014年04期

2 周強(qiáng);王俊波;邱榮;田潤(rùn)妮;楊永佳;蔣勇;;納秒激光誘導(dǎo)熔石英玻璃損傷的超快診斷[J];中國(guó)激光;2014年03期

3 彭麗勇;林家新;唐鵬;郭亮;張慶茂;;0Cr18Ni9不銹鋼飛秒激光燒蝕特性的研究[J];激光與光電子學(xué)進(jìn)展;2014年07期

相關(guān)博士學(xué)位論文 前3條

1 黃浩亮;Sm_(0.6)Nd_(0.4)NiO_3/LaAlO_3異質(zhì)外延薄膜中的金屬絕緣體轉(zhuǎn)變[D];中國(guó)科學(xué)技術(shù)大學(xué);2014年

2 尹少騫;Co基合金垂直磁各向異性薄膜的研究[D];北京科技大學(xué);2015年

3 李偉偉;多鐵性Eu_(0.5)Ba_(0.5)TiO_3薄膜物性研究[D];蘇州大學(xué);2015年

相關(guān)碩士學(xué)位論文 前10條

1 蔣波;BCT鐵電薄膜和納米纖維晶體管的制備及性能研究[D];湘潭大學(xué);2012年

2 張鵬;激光燒蝕CVD生長(zhǎng)氧化鋅基納米結(jié)構(gòu)及光學(xué)性質(zhì)研究[D];濟(jì)南大學(xué);2013年

3 吳玉婷;基于激光場(chǎng)分布的納秒激光誘導(dǎo)亞波長(zhǎng)條紋機(jī)理的研究[D];武漢理工大學(xué);2013年

4 邱智文;受主摻雜氧化鋅納米線的激光燒蝕生長(zhǎng)與器件應(yīng)用研究[D];濟(jì)南大學(xué);2014年

5 周強(qiáng);飛秒激光燒蝕熔石英光學(xué)元件的超快動(dòng)力學(xué)研究[D];西南科技大學(xué);2014年

6 邰佳麗;脈沖激光沉積法制備Mg_xZn_(1-x)O_(1-y)S_y四元合金薄膜及其性能研究[D];湖北大學(xué);2014年

7 陳俊;光纖激光修銳樹脂CBN砂輪試驗(yàn)研究[D];湖南大學(xué);2014年

8 李樂(lè);248nm準(zhǔn)分子激光與三種無(wú)機(jī)非金屬光學(xué)材料相互作用研究[D];武漢理工大學(xué);2014年

9 韓f，

本文編號(hào)：2111814