本文選題：濺射 + 馬賽克靶�。� 參考：《沈陽航空航天大學(xué)》2015年碩士論文

【摘要】：多孔材料由于其優(yōu)異的物理和力學(xué)性能現(xiàn)已成為一類廣為使用而又具有巨大應(yīng)用潛力的功能材料。本文基于Zn元素與許多元素在蒸發(fā)上的顯著差異，研究了ZnSi和ZnNi合金薄膜的制備、真空脫Zn及薄膜的潤(rùn)濕性，得到以下研究結(jié)果： 采用射頻磁控濺射沉積ZnSi和ZnNi合金薄膜，分析了馬賽克靶成分與薄膜成分產(chǎn)生差異的原因，并且研究了基片溫度和含鋅量對(duì)薄膜表面形貌的影響。研究結(jié)果表明：馬賽克靶中Zn:Si面積比在1:3-7:3時(shí)，可獲得含Zn量在47%-82%的ZnSi合金薄膜；馬賽克靶中Zn:Ni面積比在3:17-7:3時(shí),濺射沉積的ZnNi合金薄膜含Zn量為21%-74%。通過分析實(shí)驗(yàn)數(shù)據(jù)獲得了靶材料面積比與薄膜成分含量的經(jīng)驗(yàn)公式，依據(jù)該公式，可以通過調(diào)節(jié)馬賽克靶中材料面積比，來獲得不同成分含量的薄膜。 控制基片溫度為30℃-200℃，隨著基片溫度的增加，ZnSi薄膜晶粒尺寸變大，表面致密，但在200℃下由于晶粒生長(zhǎng)過大導(dǎo)致薄膜表面粗糙；隨著薄膜含鋅量的增加，在ZnSi薄膜表面出現(xiàn)球狀晶粒，并且使薄膜表面粗糙度增加。基片溫度或是含鋅量的變化均對(duì)ZnNi薄膜表面形貌影響不大。 經(jīng)過600℃、60min、真空度為410-3Pa的真空熱蒸發(fā)之后，ZnSi薄膜和ZnNi薄膜中的Zn元素絕大部分已被除去，可以獲得多孔結(jié)構(gòu)的Si薄膜和Ni薄膜。隨著薄膜中鋅含量的增加，熱蒸發(fā)后Si薄膜和Ni薄膜表面孔隙率增加。提高熱蒸發(fā)溫度，熱蒸發(fā)后薄膜的微孔尺寸增大。 本課題還研究了汞和蒸餾水分別在薄膜表面上的潤(rùn)濕行為。結(jié)果表明：熱蒸發(fā)前，隨著薄膜表面粗糙度增加，薄膜表面疏水性增強(qiáng)。熱蒸發(fā)后，兩種薄膜表面粗糙度均有較大增加，這令它們的表面疏水性更強(qiáng)。但薄膜表面粗糙度對(duì)汞滴在這兩種薄膜表面的潤(rùn)濕性影響很小。
[Abstract]:Porous materials have been widely used and have great potential for application because of their excellent physical and mechanical properties. Based on the significant differences between Zn and many elements in evaporation, the preparation of ZnSi and ZnNi alloy films, the vacuum deZn removal and the wettability of ZnSi and ZnNi alloy films were studied. The results are as follows: ZnSi and ZnNi alloy films were deposited by RF magnetron sputtering. The effects of substrate temperature and zinc content on the surface morphology of the films were also investigated. The results show that when the area ratio of Zn: Si in mosaic target is 1: 3-7: 3, ZnSi alloy films with Zn content of 47-2% and Zn: Ni area ratio of 3: 17-7: 3 in mosaic target can be obtained. The empirical formula of the ratio of target material area to the composition of film is obtained by analyzing the experimental data. According to this formula, the film with different composition can be obtained by adjusting the ratio of material area in mosaic target. Controlling substrate temperature from 30 鈩，

本文編號(hào)：2104612