本文選題：介電特性 + 寄生效應　； 參考：《桂林電子科技大學》2017年碩士論文

【摘要】：隨著集成電路微型化,薄膜化與高頻化的發(fā)展,介電薄膜得到廣泛應用。但至今為止,對于高頻下薄膜介電特性的精確提取,國內外還未有一個統(tǒng)一、完善的標準與技術。因此,介電薄膜電學特性的表征技術研究具有重要意義與較好的應用前景。高頻內采用金屬-絕緣-金屬(簡稱MIM)結構表征薄膜介電特性(介電常數εr、損耗角正切值tanδ)時,表征結果不可避免地會受到寄生效應的消極影響;而薄膜介電特性準確的提取主要依賴于寄生效應的剝離。為此本文以Si02薄膜作為研究對象,針對基于MIM結構的薄膜介電特性表征方法的精確性問題展開了一系列研究:1.深入研究了薄膜介電特性的差動法表征技術。借助射頻仿真軟件(ADS)設計了一系列內徑不同的MIM模型;并對比分析了單個結構直接表征薄膜介電特性結果,從而引出差動法表征技術的研究。文中主要探究了該方法中不同內徑的MIM組合,以及MIM結構中底部電極厚度和材料對表征結果的影響。研究結果表明:1)不同內徑的MIM組合得到的表征結果存在差異,其中組合DM65-55得到的εr均值為3.85,其表征精度高達98.7%;且tanδ值也在可接受范圍內;2)底部電極厚度的改變對εr的影響較小,而tanδ隨底部電極厚度的增加而減小;3)底部電極材料的改變對tanδ的影響較大,其值隨材料導電性增加而減小。2.探究了差動法的一個補充技術——Rs剝離技術,用于剝離差動法中沒作考慮的額外電阻。結果表明:經過該技術修正后的tanδ不再表現出較強的頻率依賴性,其值與參考值更接近。3.對R-L等效電路法與R-Cp等效電路法進行了探究,此類方法只需采用單個MIM結構便可對介電薄膜表征過程中的寄生效應進行剝離。其中,R-L等效電路法對寄生電阻R與寄生電感L進行了提取;而R-Cp等效電路法對寄生電阻R與寄生電容Cp進行提取;二者得到的寄生電阻值相近。4.將差動法的表征結果,Rs剝離技術修正的tanδ,以及R-L等效電路法與R-Cp等效電路法的表征結果進行了對比與分析。分析結果表明:寄生電容值Cp對εr的影響比寄生電感L對εr的影響大;因此,相比R-L等效電路法,R-Cp等效電路法提取的εr均值更為理想,且與差動法得到結果相近;就tanδ計算而言,R-L等效電路法與R-Cp等效電路法得到的tanδ都較理想,且與Rs剝離技術修正后tanδ相差不大。
[Abstract]:With the development of integrated circuit miniaturization, thin film and high frequency, dielectric thin film is widely used. But up to now, there is no uniform and perfect standard and technology for accurate extraction of dielectric properties of thin films at high frequency. Therefore, the study on the characterization of dielectric thin films has important significance and good application prospect. When the dielectric properties (dielectric constant 蔚 r, loss angle tangent tan 未) of the films are characterized by metal-insulation-metal structure in high frequency, the characterization results will inevitably be negatively affected by parasitic effects. The exact extraction of dielectric properties mainly depends on the exfoliation of parasitic effect. In this paper, SiO2 thin film is taken as the object of study, and a series of studies on the accuracy of the characterization method of dielectric properties based on MIM structure are carried out. The dielectric properties of thin films were characterized by differential method. A series of MIM models with different inner diameters are designed by radio frequency simulation software (ads), and the results of direct characterization of dielectric properties of thin films with a single structure are compared and analyzed. The MIM combinations with different inner diameters and the effects of the bottom electrode thickness and the material on the characterization results of the MIM structure are mainly discussed in this paper. The results show that there are differences in the characterization results of different MIM combinations with different internal diameters, in which the 蔚 r mean of DM65-55 is 3.85, and the accuracy of characterization is up to 98.70.The tan 未 value is also within the acceptable range, and the change of electrode thickness at the bottom of DM65-55 has little effect on 蔚 r. However, the tan 未 decreases with the increase of the thickness of the bottom electrode. (3) the change of the bottom electrode material has a great effect on the tan 未, and its value decreases with the increase of the conductivity of the material. In this paper, a supplementary technique of differential method, RS stripping technique, is explored, which is used to peel off the extra resistance which is not considered in the differential method. The results show that the modified tan 未 no longer shows a strong frequency dependence, and its value is closer to the reference value of .3. R-L equivalent circuit method and R-Cp equivalent circuit method are studied. The parasitic effect in the characterization process of dielectric thin films can be stripped by using only a single MIM structure. The parasitic resistance R and the parasitic inductance L were extracted by the R- L equivalent circuit method, while the parasitic resistance R and the parasitic capacitance CP were extracted by the R-Cp equivalent circuit method. The tan 未 modified by RS stripping technique and the characterization results of R-L equivalent circuit method and R-Cp equivalent circuit method were compared and analyzed. The results show that the effect of parasitic capacitance CP on 蔚 r is greater than that of parasitic inductor L on 蔚 r, therefore, the 蔚 r mean value extracted by R-L equivalent circuit method is more ideal than that by R-L equivalent circuit method, and the result is similar to that obtained by differential method. For the calculation of tan 未, the tan 未 obtained by the R-L equivalent circuit method and the R-Cp equivalent circuit method are both ideal, and the tan 未 is not different from the modified tan 未 by the RS stripping technique.
【學位授予單位】：桂林電子科技大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TB383.2

【參考文獻】

相關期刊論文 前5條

1 秦臻;陳文彬;王曉磊;楊道國;蔡苗;;MIM測試結構表征介電薄膜高頻特性的研究分析[J];電子元件與材料;2016年12期

2 陳文彬;，

本文編號：2070365