本文選題：Fe-Si-Al吸波薄膜 + 磁控濺射��； 參考：《深圳大學(xué)》2015年碩士論文

【摘要】：電子產(chǎn)品帶來方便的同時也帶來電磁污染等問題,對設(shè)備的正常運行和人類的健康帶來負面影響。解決這類問題的有效的方法是使用吸波材料,研究發(fā)現(xiàn),Fe-Si-Al合金的質(zhì)量比為85%Fe-9.5%Si-5.5%Al時,可獲得高初始磁導(dǎo)率和電阻率,具有良好的吸波性能。但Fe-Si-Al合金硬且脆,傳統(tǒng)吸波材料的制備方法為壓制成型,即添加樹脂、橡膠等粘接劑再壓制成涂層或貼片使用,但粘接劑的添加會影響其吸波效果。本次研究采用磁控濺射法直接沉積得到Fe-Si-Al薄膜,不需要添加任何粘結(jié)劑,克服了添加劑對吸波性能的影響,進一步提高了吸波材料的應(yīng)用范圍。由于薄膜材料具有鐵磁性,這種材料具有電磁屏蔽作用,因此在制備薄膜之前,先要研究靶材磁屏蔽的解決方案。再根據(jù)靶材性能特點以及靶材上各元素的濺射產(chǎn)額設(shè)計出合理的靶材尺寸、結(jié)構(gòu)以及成分配比,并對三元合金靶和Fe靶加Si-Al靶的濺射方式進行比較,且對靶材的成分做優(yōu)化調(diào)整。結(jié)果表明:改進后的濺射陰極具有高強度磁場,可滿足鐵磁性靶材磁控濺射的需要。相對Fe靶加Si-Al靶的濺射方式,三元合金靶具有更高的濺射速率,更符合實驗需要。靶材成分經(jīng)過優(yōu)化后獲得接近于Sendust成分的Fe-Si-Al吸波薄膜材料。在探索Fe-Si-Al薄膜的制備工藝的過程中發(fā)現(xiàn)發(fā)現(xiàn):通入Ar氣的流量與濺射電壓呈負相關(guān)關(guān)系。襯底溫度在50°C以下得到細晶或非晶等過渡態(tài)結(jié)構(gòu),150°C時峰強均勻,而200°C以上則在某一晶面上出現(xiàn)較強的峰。由于磁導(dǎo)率的測量對薄膜厚度有一定的要求,當(dāng)濺射時間少于3h則厚度較薄,不利于磁導(dǎo)率的測試,沉積時間為3h可獲得厚度為4um左右的薄膜材料,該厚度比較適合磁導(dǎo)率的測量。Fe含量百分比、濺射電流、薄膜厚度均隨濺射電壓的增大而增大,并在550-565V時可獲得接近于Sendust成分的鐵硅鋁薄膜。因此得到制備Fe-Si-Al吸波薄膜材料的最佳工藝條件為:Ar氣流量20sccm、襯底溫度150°C、濺射電壓550V、濺射電流0.9A、濺射時間3h。再采用不同表征手段,如高分辨率掃描電鏡、X射線衍射分析儀、光譜儀、X射線熒光光譜分析儀、射頻阻抗/材料分析儀、四探針電阻測量儀、等設(shè)備分別對薄膜材料進行表面微觀形貌、物相結(jié)構(gòu)、成分配比、磁導(dǎo)率、電阻率等進行性能分析兵探究其機理,結(jié)果發(fā)現(xiàn):在Sendust成分點附近的鐵硅鋁薄膜顆粒尺寸較大,類似于橢圓形狀,且薄膜呈柱狀生長形態(tài)。樣品的物相結(jié)構(gòu)為穩(wěn)定的α-Fe(Si,Al)置換固溶體,其電阻率隨著硅含量的增加而升高。且μ′、μ″值均比現(xiàn)有市場上抽檢的樣品值大。
[Abstract]:Electronic products not only bring convenience, but also bring electromagnetic pollution and other problems, which have negative effects on the normal operation of equipment and human health. The effective method to solve this kind of problem is to use absorbing materials. It is found that when the mass ratio of Fe-Si-Al alloy is 85-9.5Si-5.5Al, the high initial permeability and resistivity can be obtained. But Fe-Si-Al alloy is hard and brittle. The traditional preparation method of absorbing material is compaction molding, that is, adding resin, rubber and other adhesive agents to be used as coating or patch, but the addition of adhesive will affect the absorbing effect of Fe-Si-Al alloy. In this study, Fe-Si-Al thin films were prepared by magnetron sputtering without adding any binder, which overcame the influence of additives on the absorbing properties and further improved the range of application of the absorbing materials. Because the thin film material has ferromagnetism and this material has electromagnetic shielding effect, it is necessary to study the solution of target magnetic shielding before preparing the film. According to the characteristics of the target and the sputtering yield of each element on the target, the reasonable size, structure and composition ratio of the target are designed, and the sputtering methods of the ternary alloy target and the Fe target with Si-Al target are compared. The composition of the target material was optimized and adjusted. The results show that the improved sputtering cathode has a high intensity magnetic field and can meet the needs of ferromagnetic target magnetron sputtering. Compared with Fe target with Si-Al target, the ternary alloy target has higher sputtering rate and meets the need of experiment. The Fe-Si-Al thin film material which is close to the Sendust component is obtained after the target composition is optimized. It is found that the flux of ar gas is negatively related to the sputtering voltage in the process of preparing Fe-Si-Al thin films. When the substrate temperature is below 50 擄C, the peak intensity is uniform at 150 擄C in the transition structure of fine or amorphous structure, and a strong peak appears on a certain crystal plane above 200 擄C. The thickness of thin films is required by the measurement of permeability. When the sputtering time is less than 3 h, the thickness of thin films is thin, which is not good for the measurement of permeability. The film with thickness of about 4um can be obtained when the deposition time is 3 h. The thickness is suitable for the measurement of permeability. The percentage of Fe content, the sputtering current and the thickness of the film increase with the increase of sputtering voltage, and the Fe-Si-Al thin films with close to Sendust composition can be obtained at 550-565V. Therefore, the optimum conditions for preparing Fe-Si-Al films are as follows: flow rate of 20 sccm, substrate temperature of 150 擄C, sputtering voltage of 550 V, sputtering current of 0.9 A, sputtering time of 3 h. Different characterization methods were used, such as high resolution scanning electron microscope X-ray diffraction analyzer, spectrometer X ray fluorescence spectrum analyzer, radio frequency impedance / material analyzer, four probe resistance measuring instrument, The surface microstructure, phase structure, composition ratio, permeability, resistivity and so on of the thin film materials were analyzed respectively. The results showed that the particle size of the Fe-SiAl film near the Sendust composition point was larger. It is similar to elliptical shape, and the film is columnar. The phase structure of the sample is a stable 偽 -FeSI-Si-Al replacement solid solution, and its resistivity increases with the increase of silicon content. Moreover, the values of 渭 "and 渭" are higher than those of samples sampled in the existing market.
【學(xué)位授予單位】：深圳大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TB383.2

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相關(guān)期刊論文 前10條

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本文編號：2033118