本文選題：高溫超導(dǎo)帶材 + 缺陷分析　； 參考：《低溫與超導(dǎo)》2016年10期

【摘要】：實(shí)現(xiàn)二代高溫超導(dǎo)產(chǎn)業(yè)化的關(guān)鍵之一是提高良率。作者在實(shí)踐中發(fā)現(xiàn),影響帶材良率的一個(gè)重要因素是存在于帶材上的缺陷。對二代高溫超導(dǎo)帶材中缺陷的研究應(yīng)該是個(gè)一個(gè)重要的課題,但是還沒有見到過有關(guān)的報(bào)道,該文對帶材中大量出現(xiàn)的典型缺陷進(jìn)行SEM和EDS分析發(fā)現(xiàn),發(fā)現(xiàn)缺陷處有大量C元素,且該C元素存在于拋光基帶和緩沖隔離層之間的界面上。由此,推測缺陷產(chǎn)生的根源是拋光帶表面的有機(jī)物污染,并得到了證實(shí)。據(jù)此,在拋光工藝中的過濾系統(tǒng)得到了改進(jìn),最終良率得到了提高。同時(shí),作者認(rèn)為,使用SEM-EDS對缺陷進(jìn)行元素分析,是二代帶材開發(fā)生產(chǎn)中,對帶材缺陷進(jìn)行快速分析的一種可行方法。
[Abstract]:One of the keys to realize the industrialization of the second generation HTS is to improve the yield. In practice, the author found that one of the most important factors affecting the strip yield is the defect on the strip. The study of defects in the second generation HTS tapes should be an important subject, but no related reports have been seen. In this paper, the SEM and EDS analysis of the typical defects in the second generation HTS tapes are carried out. It is found that there are a large number of C elements in the defects, and the C element exists on the interface between the polished baseband and the buffer isolation layer. Therefore, it is assumed that the source of defects is organic contamination on the surface of the polished tape, which has been confirmed. Therefore, the filtration system in polishing process is improved and the yield is improved. At the same time, the author thinks that SEM-EDS is a feasible method for rapid analysis of defects in the second generation strip development and production.
【作者單位】： 蘇州新材料研究所有限公司;
【分類號】：TM26
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本文編號：1989641