發(fā)布時間：2018-05-27 16:11

  本文選題：銀納米線 + 透明電極　； 參考：《國防科學技術(shù)大學》2015年碩士論文

【摘要】：銀納米線可用于制備光電性能優(yōu)異且具柔性的透明電極,是最有希望替代ITO導(dǎo)電玻璃的新一代透明導(dǎo)電材料。理論研究表明,制備性能優(yōu)異透明電極的銀納米線應(yīng)具有細且長的特性,直徑應(yīng)小于30nm,長徑比應(yīng)不小于800。本文以合成細長銀納米線和制備高性能透明電極為目標,研究不同尺寸銀納米線的可控合成以及透明電極的制備、性能優(yōu)化和表征。研究發(fā)現(xiàn),用一鍋多醇法工藝制備銀納米線易于實現(xiàn)其直徑及長徑比的可控。形核條件、生長阻力、生長速率、二次形核等是影響細長銀納米線合成的因素。論文系統(tǒng)研究了一鍋多醇法制備細長銀納米線的反應(yīng)體系及工藝參數(shù),實現(xiàn)了直徑40~100nm平均長度0.04~40μm范圍內(nèi)銀納米線的尺寸可控。重點研究各類鹵化物成核控制劑對銀納米線合成反應(yīng)中形核和生長過程的影響。建立了成核控制劑——成核大小——產(chǎn)物尺寸的物理模型。實驗表明,選用NaCl/KBr體系混合形核劑,可合成出平均直徑26nm,平均長度21μm,長徑比超過800,滿足高性能透明電極要求的細長銀納米線。分析認為,氯離子對反應(yīng)活度的降低和溴離子對成核尺寸的控制是制備細長銀納米線的關(guān)鍵。在掌握銀納米線分離分散工藝的基礎(chǔ)上,制備了銀納米線分散液(不含樹脂粘接劑)及銀納米線墨水(含低體積分數(shù)樹脂粘接劑),并用旋涂法分別在玻璃和PET兩種基材表面制備出透明導(dǎo)電膜層。在玻璃和PET表面用優(yōu)化的分散液配方制得的導(dǎo)電膜層在90%透過率下的方阻分別為17.6Ω/sq和29.5Ω/sq。而由墨水制備的膜層光電性能與分散液制備的膜層相當,經(jīng)膠帶粘揭后導(dǎo)電性能基本不變。旋涂法制得的銀納米線導(dǎo)電膜層經(jīng)洗滌、加熱、加壓、介質(zhì)還原等后處理可進一步提高透明電極的光電性能。各種處理的基本原理均為在不降低透光性能的基礎(chǔ)上降低銀納米線網(wǎng)絡(luò)節(jié)點的接觸電阻,以提高膜層的導(dǎo)電性能。結(jié)果表明,在玻璃和PET基底上制備的細長銀納米線透明電極經(jīng)加熱處理后,在90%的透過率下方阻可低至10Ω/sq左右,顯著優(yōu)于ITO透明電極的光電性能。PET基底的銀納米線透明電極在加熱后導(dǎo)電膜層的附著力明顯提升。玻璃基底銀納米線透明電極經(jīng)樹脂覆蓋后基底附著力大幅提高,經(jīng)多次膠帶粘揭方阻增大率小于10%。
[Abstract]:Silver nanowires can be used to prepare transparent electrodes with excellent optoelectronic properties and flexible properties. Silver nanowires are the most promising new generation transparent conductive materials to replace ITO conductive glass. The theoretical study shows that the silver nanowires with excellent properties should be fine and long, the diameter should be less than 30 nm and the aspect ratio should be not less than 800. In this paper, the controllable synthesis of silver nanowires with different sizes and the preparation, performance optimization and characterization of transparent electrodes were studied, aiming at the synthesis of thin silver nanowires and the preparation of high performance transparent electrodes. It is found that the diameter and aspect ratio of silver nanowires prepared by one pot polyol process are easy to be controlled. Nucleation conditions, growth resistance, growth rate and quadratic nucleation are the factors affecting the synthesis of thin silver nanowires. The reaction system and process parameters of thin silver nanowires prepared by one-pot polyol method were systematically studied in this paper. The size of silver nanowires was controlled in the range of 0.04 ~ 40 渭 m in the average diameter of 40~100nm. The effect of various halide nucleating agents on nucleation and growth of silver nanowires was studied. A physical model of nucleation control agent-nucleation size-product size was established. The experimental results show that the thin silver nanowires with an average diameter of 26 nm, an average length of 21 渭 m and a aspect ratio of more than 800 can be synthesized by using the mixed nucleating agent of NaCl/KBr system. It is considered that the reduction of the activity of chloride ion pair reaction and the control of the nucleation size of bromine ions are the key to the preparation of thin silver nanowires. On the basis of mastering the separation and dispersion process of silver nanowires, Silver nanowire dispersions (without resin adhesives) and silver nanowire inks (containing low volume fraction resin adhesives) were prepared. Transparent conductive films were prepared on glass and PET substrates by spin coating. At 90% transmittance, the square resistance of the conductive films prepared on glass and PET surfaces with optimized dispersion formula is 17.6 惟 / sq and 29.5 惟 / sqsqrespectively. The photovoltaic property of the film prepared by ink is similar to that of the film prepared by dispersions, and the conductivity of the film is basically unchanged after the adhesive of adhesive tape. After washing, heating, pressurizing and medium reduction, the silver nanowire film prepared by spin-coating method can further improve the photoelectric performance of transparent electrode. The basic principle of all kinds of processing is to reduce the contact resistance of the silver nanowire network nodes without reducing the transmittance of the silver nanowires in order to improve the conductivity of the film. The results show that the thin silver nanowire transparent electrode prepared on glass and PET substrate is heated, and the resistance can be as low as 10 惟 / sq at 90% transmittance. The photovoltaic properties of the silver nanowire transparent electrode which is obviously superior to that of the ITO transparent electrode. The adhesion of the conductive film layer of the silver nanowire transparent electrode after heating is obviously improved. The adhesion of glass substrate silver nanowire transparent electrode covered by resin was greatly improved, and the increase rate of square resistance was less than 100.The increase rate of glass substrate silver nanowire transparent electrode was less than 10%.
【學位授予單位】：國防科學技術(shù)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TB383.1;TQ131.22

【參考文獻】

相關(guān)碩士學位論文 前2條

1 李曉曉;銀納米線和銀納米支狀材料的制備與應(yīng)用[D];浙江大學;2012年

2 顏光清;銀納米線和網(wǎng)的制備及其應(yīng)用[D];浙江大學;2011年

，

本文編號：1942855