發(fā)布時(shí)間：2018-05-23 23:31

  本文選題：金屬納米粒子點(diǎn)陣 + 量子輸運(yùn)　； 參考：《南京大學(xué)》2015年碩士論文

【摘要】：金屬納米粒子點(diǎn)陣中電子的傳輸機(jī)制不同于經(jīng)典接觸式的歐姆輸運(yùn)模式,而是以量子輸運(yùn)的形式進(jìn)行的。在這種輸運(yùn)模式下,納米粒子點(diǎn)陣的電導(dǎo)率對(duì)粒子間距的變化極其敏感。這導(dǎo)致了粒子間距的細(xì)微改變就會(huì)使材料整體的電導(dǎo)率產(chǎn)生較大變化。根據(jù)這一特點(diǎn),彈性襯底表面制備電極并覆蓋金屬納米粒子點(diǎn)陣,能夠得到新型的應(yīng)變傳感器。本論文研究基于金屬Cr納米粒子點(diǎn)陣的應(yīng)變傳感器的制備與傳感特性。論文采用團(tuán)簇束流沉積制備Cr納米粒子點(diǎn)陣,通過(guò)對(duì)沉積過(guò)程的實(shí)時(shí)電導(dǎo)監(jiān)控,實(shí)現(xiàn)對(duì)納米粒子點(diǎn)陣覆蓋率與初始電導(dǎo)的精確控制。選擇PET薄膜并在其上通過(guò)掩模蒸發(fā)鍍膜制作叉指電極作為襯底,在其上制備可控密度的Cr納米粒子點(diǎn)陣構(gòu)成應(yīng)變傳感器。對(duì)金屬Cr納米粒子點(diǎn)陣的變溫Ⅰ-Ⅴ曲線與電導(dǎo)測(cè)量表明,硅襯底上的Cr納米粒子點(diǎn)陣,直至室溫都能夠觀察到明顯的庫(kù)倫阻塞效應(yīng),而在PET襯底上的Cr納米粒子點(diǎn)陣中,即使在低溫下,也未庫(kù)倫阻塞現(xiàn)象,可能是PET襯底較大的熱脹冷縮效應(yīng)導(dǎo)致的納米粒子間距的變化掩蓋了溫度變化對(duì)量子電導(dǎo)的影響。但兩種襯底上測(cè)量的Cr納米粒子點(diǎn)陣的電導(dǎo)-溫度曲線,都呈現(xiàn)不同于塊狀金屬材料的負(fù)電阻溫度系數(shù),表明其電導(dǎo)都起源于量子輸運(yùn)。本文研究了Cr納米粒子點(diǎn)陣應(yīng)變傳感器對(duì)不同形式應(yīng)變的響應(yīng)特性。在拉伸測(cè)試中,傳感器的電導(dǎo)變化與應(yīng)變呈現(xiàn)了良好的線性關(guān)系,在彈性范圍內(nèi),傳感器的靈敏度系數(shù)可達(dá)6.1,優(yōu)于金屬應(yīng)變片。在彎曲測(cè)試中,傳感器的電導(dǎo)變化與應(yīng)變呈現(xiàn)指數(shù)關(guān)系,具有優(yōu)異的靈敏度系數(shù),在應(yīng)變?yōu)?.16%以?xún)?nèi),靈敏度系數(shù)可達(dá)到40以上。傳感器也具有大的量程,最大應(yīng)變能夠達(dá)到3%,對(duì)應(yīng)的靈敏度系數(shù)最高可達(dá)到近3000。在壓強(qiáng)測(cè)試中,Cr納米粒子點(diǎn)陣傳感器顯示了在大氣壓強(qiáng)附近進(jìn)行Pa量級(jí)高精度壓力測(cè)量的能力,可用于高精度大氣氣壓監(jiān)測(cè)、新一代車(chē)載導(dǎo)航、個(gè)人氣象站等應(yīng)用。本文還研究了納米粒子覆蓋率對(duì)所構(gòu)成應(yīng)變傳感器的靈敏度系數(shù)的影響,實(shí)驗(yàn)表明,在覆蓋率已達(dá)到滲流閾值的樣品中,納米粒子覆蓋率越低,應(yīng)變響應(yīng)的靈敏度系數(shù)越高。
[Abstract]:The mechanism of electron transport in metal nanoparticles lattice is different from the classical contact ohmic transport mode, but in the form of quantum transport. In this transport mode, the conductivity of nanoparticle lattice is very sensitive to the change of particle spacing. This leads to a slight change in the spacing of particles, resulting in a significant change in the overall conductivity of the material. According to this characteristic, a new strain sensor can be obtained by fabricating electrodes on the surface of elastic substrates and covering metal nanoparticles with lattice. In this paper, the fabrication and sensing characteristics of strain sensors based on metal Cr nanoparticles lattice are studied. In this paper, Cr nanoparticles lattice was prepared by cluster beam deposition, and the coverage and initial conductance of nano-particles were accurately controlled by monitoring the deposition process in real time. Cross finger electrode was fabricated on PET thin film by mask evaporation, on which Cr nanocrystalline lattice with controllable density was fabricated to form strain sensor. The variable-temperature I-鈪，

本文編號(hào)：1926818