本文選題：磁控濺射 + 快速光熱退火�。� 參考：《云南師范大學(xué)》2017年碩士論文

【摘要】：太陽(yáng)能是一種可再生能源,其資源極為豐富。太陽(yáng)電池就是通過(guò)吸收太陽(yáng)能來(lái)進(jìn)行發(fā)電。硅量子點(diǎn)薄膜在太陽(yáng)電池領(lǐng)域具有重要的應(yīng)用前景。本論文以碳化硅基硅量子點(diǎn)薄膜為研究對(duì)象,主要工作集中在薄膜的制備及性能研究?jī)蓚�(gè)方面。本文利用磁控共濺射法結(jié)合快速光熱退火法制備出碳化硅基硅量子點(diǎn)薄膜。對(duì)不同襯底溫度下薄膜的性能進(jìn)行研究;結(jié)果表明,隨著襯底溫度從室溫(25℃)升至400℃,硅量子點(diǎn)數(shù)量先增多后減少、尺寸先增大后減小和晶化率先升高后降低,但薄膜的光學(xué)帶隙卻先減小后增大,最佳襯底溫度為300℃;研究了不同濺射功率和退火溫度下硅量子點(diǎn)薄膜的性能;研究表明,濺射功率和退火溫度對(duì)硅量子點(diǎn)數(shù)量、尺寸、晶化率、光學(xué)帶隙和光致發(fā)光峰等均有影響;當(dāng)濺射功率為100w時(shí),制備出的薄膜質(zhì)量最好;薄膜的最佳退火溫度為1100℃。利用磁控共濺射法,并與微波退火和快速光熱退火相結(jié)合制備出碳化硅基硅量子點(diǎn)薄膜;研究了兩種退火方法下薄膜的特性。由實(shí)驗(yàn)結(jié)果可知:微波退火可將生長(zhǎng)硅量子點(diǎn)所需的溫度降低200℃;在相同溫度條件下,微波退火生長(zhǎng)出的硅量子點(diǎn)數(shù)量更多、晶化率更高和光致發(fā)光峰更強(qiáng);當(dāng)微波退火溫度達(dá)到1000℃時(shí),硅量子點(diǎn)數(shù)量最多、尺寸最大(5.26nm)、晶化率最高(74.25%)和發(fā)光峰最強(qiáng),說(shuō)明微波退火能生長(zhǎng)出質(zhì)量好的硅量子點(diǎn)。
[Abstract]:Solar energy is a renewable energy, its resources are extremely rich. Solar cells generate electricity by absorbing solar energy. The silicon quantum dot thin film has the important application prospect in the solar cell domain. This thesis focuses on the preparation and properties of silicon carbide quantum dot films. Sic based silicon quantum dots thin films were prepared by magnetron co-sputtering and rapid photothermal annealing. The properties of the films at different substrate temperatures are studied. The results show that with the substrate temperature rising from 25 鈩，

本文編號(hào)：1924401