本文選題：水熱法 + 磷摻雜��； 參考：《哈爾濱工業(yè)大學》2015年碩士論文

【摘要】：ZnO是典型的第三代寬帶隙半導體,是II-VI族直接帶隙半導體,其禁帶寬度為3.37e V,室溫下激子束縛能高達60me V,遠大于室溫的熱離化能26me V,因此ZnO是制備室溫紫外激光器的優(yōu)良材料;而由于ZnO材料熱穩(wěn)定性高、外延溫度低、鋅元素價格便宜等特點,使得.ZnO成為了研究者們關(guān)注的焦點。雖然ZnO有著諸多優(yōu)點,但是由于未摻雜的ZnO為n型半導體,其摻雜雜質(zhì)的低固溶度和ZnO本身的自補償效應(yīng)使得ZnO的p型摻雜十分困難,這也大大的阻礙了ZnO在半導體領(lǐng)域的應(yīng)用。研究者們對ZnO的p型摻雜進行了大量的研究,但是仍.然有很多問題沒有解決。本文采用水熱法,制備出未摻雜的ZnO納米柱,并在制備本征ZnO納米柱的基礎(chǔ)上,以磷酸二氫銨為磷源制備出了磷摻雜p型ZnO納米柱,利用掃描電子顯微鏡、能譜儀、和光致發(fā)光測試系統(tǒng)對其進行表征,研究了不同水熱條件對磷摻雜ZnO納米柱的影響,并初步的研究了磷摻雜ZnO納米柱的摻雜機理。具體的研究內(nèi)容如下:1、首先對在襯底上利用溶膠-凝膠提拉法制備ZnO種子層進行改進,減少制備種子層過程中暴露在空氣中的時間,減少制備的ZnO納米柱中的污染雜質(zhì);并改進種子層提拉技術(shù),增加種子層提拉次數(shù),并對在提拉后對種子進行退火處理,使得制備的ZnO納米柱尺寸均勻、長徑比均一、有良好的c軸取向。2、以水熱法制備本征ZnO納米柱為基礎(chǔ),以磷酸二氫銨作為磷源,制備出了磷摻雜ZnO納米柱。用SEM、EDS對制備的磷摻雜ZnO納米柱進行表征,研究了不同的水熱條件,對磷摻雜ZnO納米柱形貌、尺寸、磷含量等的影響。制備出了尺寸均勻、長徑比均一的磷摻雜ZnO納米柱。3、通過對磷摻雜ZnO納米柱進行不同溫度的退火處理,成功制備出了磷摻雜p型ZnO納米柱。通過SEM、EDS等測試方法對p型ZnO納米柱進行表征,對磷摻雜ZnO納米柱的生長及摻雜機理進行了解釋。并通過低溫PL和變溫PL測試對磷摻雜p型ZnO納米柱進行了表征,研究了磷摻雜ZnO中導電類型的轉(zhuǎn)變及磷元素在ZnO中的摻雜能級,從而證明了制備出的磷摻雜ZnO納米柱為p型半導體。
[Abstract]:ZnO is a typical third generation wide band gap semiconductor, which is a direct band gap semiconductor of II-VI family. Its band gap width is 3.37e V. the exciton binding energy is as high as 60me V at room temperature, which is much larger than the thermal ionization energy 26me V at room temperature. Therefore, ZnO is an excellent material for preparing room temperature ultraviolet lasers. Because of its high thermal stability, low epitaxial temperature and low price of zinc, ZnO has become the focus of researchers. Although ZnO has many advantages, because the undoped ZnO is n-type semiconductor, the low solid solubility of doping impurity and the self-compensation effect of ZnO make the p-type doping of ZnO very difficult. This also greatly hinders the application of ZnO in semiconductor field. Researchers have done a lot of research on p-type doping of ZnO, but still. There are, however, many unsolved problems. In this paper, undoped ZnO nanorods were prepared by hydrothermal method. On the basis of the preparation of intrinsic ZnO nanorods, P-doped p-type ZnO nanorods were prepared with ammonium dihydrogen phosphate as phosphorus source. Scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS) were used to prepare P-doped p-type ZnO nanorods. The effects of hydrothermal conditions on phosphorus-doped ZnO nanorods were studied. The doping mechanism of phosphorus-doped ZnO nanorods was also preliminarily studied. The specific research contents are as follows: 1. Firstly, the preparation of ZnO seed layer by sol-gel Czochralski method on the substrate is improved to reduce the time of exposure to air during the preparation of the seed layer, and to reduce the polluted impurities in the prepared ZnO nano-column. The technique of seed layer Czochralski was improved to increase the number of seed layer Czochralski and to annealing the seed after Czochralski. The results showed that the ZnO nano-column was uniform in size and the aspect ratio was uniform. It has good c-axis orientation. Based on the intrinsic ZnO nanocolumn prepared by hydrothermal method and ammonium dihydrogen phosphate as phosphorus source, phosphorus-doped ZnO nanocolumn was prepared. Phosphorus-doped ZnO nanocolumns were characterized by SEMS-EDS. The effects of different hydrothermal conditions on the morphology, size and phosphorus content of P-doped ZnO nanocolumns were studied. Phosphorus-doped ZnO nanorods with uniform size and uniform aspect ratio were prepared. P-doped ZnO nanorods were successfully prepared by annealing at different temperatures. The p-type ZnO nanorods were characterized by means of SEM-EDS, and the growth and doping mechanism of P-doped ZnO nanocolumns were explained. The P-doped p-type ZnO nanorods were characterized by low temperature PL and variable temperature PL measurements. The transition of conducting type and the doping level of phosphorus in ZnO were studied. It is proved that the P-doped ZnO nanocrystals are p-type semiconductors.
【學位授予單位】：哈爾濱工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TB383.1;TQ132.41

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