直流反應(yīng)磁控濺射沉積a-C:H薄膜的微結(jié)構(gòu)和摩擦磨損行為
發(fā)布時間:2018-05-20 03:21
本文選題:磁控濺射 + a-C; 參考:《有色金屬科學與工程》2016年01期
【摘要】:采用直流的反應(yīng)磁控濺射技術(shù),以高純石墨為濺射靶材和CH_4為反應(yīng)氣體,調(diào)節(jié)CH_4流量,在p(100)單晶硅和不銹鋼基底上成功制備出系列的含氫a-C:H薄膜.利用場發(fā)射掃描電子顯微鏡(FESEM)、原子力顯微鏡(AFM)、Raman光譜、納米壓痕儀、CSM劃痕測試儀、摩擦磨損試驗機等測試手段對所制備含氫a-C:H薄膜的微結(jié)構(gòu)、力學性能和摩擦磨損行為進行系統(tǒng)表征.結(jié)果表明:隨著CH_4流量的增加,含氫a-C:H薄膜的致密度呈現(xiàn)出微弱的先增加后減小的趨勢;薄膜的沉積速率隨著CH_4流量的增加逐漸增加,但增幅呈現(xiàn)出逐漸減小趨勢;隨著CH_4流量的增加,薄膜中sp~3雜化鍵含量及其納米硬度和楊氏模量也呈現(xiàn)出先增加后減小的規(guī)律;摩擦實驗結(jié)果表明當CH_4流量為8 sccm,所制備的含氫a-C:H薄膜的摩擦學性能最佳,摩擦系數(shù)為0.20,磨損率為6.48×10~(-7)mm~3/(N·m).
[Abstract]:A series of hydrogen-containing a-C:H thin films were successfully prepared on the substrate of pX100) by DC reactive magnetron sputtering with high purity graphite as the sputtering target and CH_4 as the reactive gas and adjusting the flow rate of CH_4. The microstructure of hydrogen-containing a-C:H films was investigated by means of field emission scanning electron microscope (SEM), atomic force microscope (AFM), nano-indentation instrument (CSM) scratch tester, friction and wear tester, etc. Mechanical properties and friction and wear behaviors were systematically characterized. The results show that the density of hydrogen-containing a-C:H films increases slightly and then decreases with the increase of CH_4 flow rate, and the deposition rate increases gradually with the increase of CH_4 flow rate, but decreases gradually with the increase of CH_4 flow rate. With the increase of the flow rate of CH_4, the content of sp~3 hybrid bond and its nano-hardness and Young's modulus in the films increased first and then decreased, and the tribological properties of the hydrogen-containing a-C:H films were the best when the flow rate of CH_4 was 8sccm. The friction coefficient is 0.20 and the wear rate is 6.48 脳 10~(-7)mm~3/(N.
【作者單位】: 江西理工大學材料科學與工程學院;
【基金】:國家自然科學基金資助項目(51302116) 中科學院蘭化所國家重點實驗室開放基金項目(LSL-1203)
【分類號】:TB383.2
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本文編號:1912975
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