本文選題：銦錫氧化物 + 透明導(dǎo)電薄膜　； 參考：《昆明理工大學(xué)》2017年碩士論文

【摘要】：ITO(In_2O_3與SnO_2質(zhì)量比為9:1的銦錫氧化物)薄膜是一種非常重要的高度簡并N型半導(dǎo)體材料。ITO薄膜身兼低電阻率、高透光率、機(jī)械硬度高、良好的化學(xué)穩(wěn)定性以及強(qiáng)的附著能力等優(yōu)異性能,使得它在平板顯示,交通工具,防護(hù),發(fā)光隱身材料、高層建筑、太陽能利用和靈敏器件等領(lǐng)域具有極其廣泛的應(yīng)用。以往針對ITO薄膜的研究表明,生產(chǎn)優(yōu)質(zhì)的ITO薄膜工藝存在設(shè)備昂貴,生產(chǎn)周期長、工藝復(fù)雜等不利因素,本實(shí)驗(yàn)就上述問題在噴霧熱解技術(shù)的基礎(chǔ)上利用微波作為熱源設(shè)計(jì)了一種超聲波噴霧微波熱解直接沉積ITO透明導(dǎo)電薄膜的方法。主要研究內(nèi)容包括:(1)分析了前驅(qū)體物質(zhì)的差熱差重,發(fā)現(xiàn)四氯化錫(395.1 K)和三氯化銦(553 K)分解反應(yīng)的起始溫度不同,給后面的溫度實(shí)驗(yàn)提供理論依據(jù);探究了基片/基座在微波熱源下的升溫速率(max 91℃/min),研究了前驅(qū)體溶液的吸收微波特性,前驅(qū)體溶液介電常數(shù)略小于水,但是其介電損耗正切tanδ=0.3725,比水的介電特性大一個數(shù)量級,表明前驅(qū)體氯化物具有良好的吸波特性。(2)系統(tǒng)研究了微波熱解溫度、前驅(qū)體溶液濃度、基片與噴嘴距離等因素對ITO薄膜結(jié)構(gòu)和性能的影響。對比了傳統(tǒng)熱源和微波熱源熱解得到的薄膜的光學(xué)、電學(xué)性能,實(shí)驗(yàn)結(jié)果表明:微波熱解溫度在500 ℃,前驅(qū)體溶液濃度為0.05 mol/L,基片與噴嘴距離20 cm時制備的ITO薄膜晶粒細(xì)小,尺寸分布窄(16～32 nm),表面均勻光滑,同時該薄膜的可見光平均透過率為96.55%,電阻率為2.28×10-4Ω-cm。比傳統(tǒng)噴霧熱解有更好的表面結(jié)構(gòu),電阻率低一個數(shù)量級。(3)系統(tǒng)探究了不同Sn摻雜量對氧化銦錫薄膜的微觀及性能影響,結(jié)果表明:摻雜能夠降低氧化銦薄膜的電阻率兩個數(shù)量級,提高薄膜透光率3.85%,與此同時,薄膜的微觀形貌,表面粗糙度得到了很大的優(yōu)化,得到優(yōu)化的氧化錫摻雜濃度為5～15%。本研究用超聲波噴霧微波熱解一步法成功制備出了結(jié)構(gòu)、光學(xué)和電學(xué)性能優(yōu)異的ITO薄膜,同時可為其它薄膜材料的經(jīng)濟(jì)和綠色制備提供技術(shù)借鑒。
[Abstract]:Indium tin oxide film with 9:1 mass ratio of ITO(In_2O_3 to SnO_2 is a very important highly degenerate N-type semiconductor material. ITO thin film has low resistivity, high transmittance and high mechanical hardness. Due to its excellent chemical stability and excellent adhesion, it has been widely used in flat panel display, transportation, protection, luminous stealth materials, high-rise buildings, solar energy utilization and sensitive devices. Previous studies on ITO thin films have shown that there are some disadvantages such as expensive equipment, long production cycle, complex process and so on, in the process of producing high quality ITO films. Based on the technology of spray pyrolysis, a method of direct pyrolysis of ITO transparent conductive films by ultrasonic spray microwave pyrolysis was designed in this paper. The main research contents include: (1) the differential thermal differential weight (DTA) of the precursor is analyzed. It is found that the initial temperature of the decomposition reaction of tin tetrachloride (395.1 K) and indium trichloride (553 K) is different, which provides a theoretical basis for the subsequent temperature experiment. The heating rate of substrate / pedestal under microwave heat source is investigated. The microwave absorption characteristics of precursor solution are studied. The dielectric constant of precursor solution is slightly smaller than that of water, but its dielectric loss is tangent tan 未 0.3725, which is one order of magnitude larger than that of water. The results show that the precursor chloride has good absorbing property. The effects of microwave pyrolysis temperature, concentration of precursor solution and the distance between substrate and nozzle on the structure and properties of ITO films are studied. The optical and electrical properties of the films obtained by conventional and microwave pyrolysis are compared. The experimental results show that the ITO thin films prepared by microwave pyrolysis at 500 鈩，

本文編號：1912162