發(fā)布時間：2018-05-16 05:14

  本文選題：硅納米線 + 碲薄膜　； 參考：《電子科技大學(xué)》2017年碩士論文

【摘要】：硅納米線具有優(yōu)于體硅和非晶硅材料的光學(xué)和電學(xué)特性,如高的陷光效應(yīng)、載流子收集效率、量子限域效應(yīng)和帶隙可調(diào)等優(yōu)點,因而在光電器件領(lǐng)域具有廣泛的應(yīng)用價值。本文首次使用射頻磁控濺射法成功地在ITO玻璃上制備出硅納米線(SiNWs),通過控制生長溫度、Ar/H2及沉積時間實現(xiàn)了對硅納米線的直徑、長度與密度的可控生長。系統(tǒng)地研究了生長溫度和Ar/H2對硅納米線的表面形貌、內(nèi)部晶體結(jié)構(gòu)、光學(xué)和電學(xué)特性的影響。此外,在硅納米線的基礎(chǔ)上制備了碲/硅納米線(Te/SiNWs)結(jié)構(gòu),研究了Te/SiNWs結(jié)構(gòu)的微觀結(jié)構(gòu)、光學(xué)和電學(xué)性能,并得到以下結(jié)論:1,SEM圖表明SiNWs的最佳生長溫度和Ar/H2流量比分別為300℃和75/25。Raman圖表明260℃時制備的SiNWs中納米晶比例最大,300℃制備的SiNWs的短程有序性最高。FTIR譜表明SiNWs中不存在Si-H鍵,只存在少量的Si-H2鍵。SiNWs的吸收峰隨襯溫度和H2/Ar流量比的增加而先向紫外后向紅外波段偏移。SiNWs的光學(xué)帶隙分別在襯溫為300℃和Ar/H2流量比為65/35時達到最大的1.89 eV和2.04 eV,其明暗電導(dǎo)率與襯溫不成線性變化,與Ar/H2流量呈先增后減的趨勢,明電導(dǎo)率在襯溫為300℃時達到最大(10-4?-1cm-1)。I-V曲線表明SiNWs具有整流特性,整流值約為50 mA和-50 mA。2,室溫下制備的Te薄膜連續(xù)性好,高于室溫制備的Te膜表面形成了納米結(jié)構(gòu)。室溫下制備的Te膜(不同厚度)均在中紅外波段有高透射率(=67%)。Te/SiNWs結(jié)構(gòu)的樣品均在2150 nm出現(xiàn)明顯的反射峰,而僅在100℃的制備溫度下出現(xiàn)了570 nm和750 nm兩處反射峰。Te/SiNWs結(jié)構(gòu)樣品的透射率均在中紅外波段隨波長同步增加,與制備溫度呈先增后減的趨勢,在可見-近紅外波段,Te/SiNWs有低透射率(=17%)。在中紅外波段,所有Te/SiNWs結(jié)構(gòu)樣品的吸收率均隨波長的增加而減小,而在可見-近紅外波段,Te/SiNWs吸收峰僅在制備溫度為100℃時出現(xiàn)了兩處。Te/SiNWs結(jié)構(gòu)的I-V曲線同樣表現(xiàn)出了整流特性。SEM和TEM圖譜均表明:Te/SiNWs結(jié)構(gòu)表面Te膜附著在SiNWs表面。XRD,Raman和HRTEM圖均表明:附著在SiNWs表面的Te薄膜的內(nèi)部晶體結(jié)構(gòu)為多晶結(jié)構(gòu)。
[Abstract]:Silicon nanowires have better optical and electrical properties than bulk silicon and amorphous silicon materials, such as high trapping effect, carrier collection efficiency, quantum limiting effect and tunable band gap, so they have wide application value in the field of optoelectronic devices. In this paper, Si nanowires have been successfully prepared on ITO glass by RF magnetron sputtering for the first time. The controllable growth of the diameter, length and density of Si nanowires has been achieved by controlling the growth temperature and the deposition time. The effects of growth temperature and Ar/H2 on the surface morphology, internal crystal structure, optical and electrical properties of silicon nanowires were systematically studied. In addition, the Te / SiNWs structure was prepared on the basis of silicon nanowires. The microstructure, optical and electrical properties of Te/SiNWs structure were studied. The following conclusions are obtained: the best growth temperature and Ar/H2 flow ratio of SiNWs are 300 鈩，

本文編號：1895597