本文選題：人工電磁超材料 + 紅外吸波結(jié)構(gòu)　； 參考：《電子科技大學(xué)》2017年碩士論文

【摘要】：近年來,紅外吸波結(jié)構(gòu)由于具有獨(dú)特的電磁諧振特性成為了人工電磁超材料領(lǐng)域的研究熱點(diǎn)。同時(shí),隨著相變材料的快速發(fā)展,其在紅外吸波結(jié)構(gòu)中也得到了廣泛的應(yīng)用,使得該類材料不僅具有人工電磁超材料的功能特性,而且也變得更加智能化,其研究價(jià)值和應(yīng)用前景也越來越廣闊。本文以經(jīng)典的金屬-介質(zhì)-金屬的“三明治”吸波結(jié)構(gòu)為研究對象,采用具有熱致相變特性的VO2薄膜分別作為金屬層和介質(zhì)層材料,研究了VO2薄膜在不同狀態(tài)下相對介電常數(shù)的色散特性,據(jù)此設(shè)計(jì)了具有熱控制特性的智能紅外吸波結(jié)構(gòu)并對其工作機(jī)理進(jìn)行分析驗(yàn)證。本論文的創(chuàng)新性和相關(guān)研究成果主要有以下幾點(diǎn):(1)研究了相變材料VO2薄膜在金屬態(tài)、半導(dǎo)體態(tài)、相變過渡態(tài)以及復(fù)合態(tài)下相對介電常數(shù)的色散特性,通過非線性擬合和有效媒質(zhì)理論,得到所制備VO2薄膜在各狀態(tài)下的相對介電常數(shù)及其色散特性,認(rèn)為所采用的色散模型不僅擬合方法簡單、擬合結(jié)果準(zhǔn)確度高,而且還適用于具有復(fù)合相或雜質(zhì)相的復(fù)合材料。(2)以VO2薄膜分別作為吸波結(jié)構(gòu)的金屬層和介質(zhì)層,設(shè)計(jì)了具有熱調(diào)控吸波特性的金屬-介質(zhì)-金屬式的“三明治”式紅外吸波結(jié)構(gòu)。當(dāng)VO2薄膜為底層的金屬層時(shí),低溫時(shí)的吸波結(jié)構(gòu)無明顯吸收峰,且反射率都大于40%,高溫時(shí)的吸波結(jié)構(gòu)在3.2μm和7.5μm處存在駐波吸收峰和磁諧振吸收峰;當(dāng)VO2薄膜為介質(zhì)層時(shí),低溫時(shí)的吸波結(jié)構(gòu)在9.9μm處存在一個(gè)較強(qiáng)的寬帶吸收峰,高溫時(shí)的吸波結(jié)構(gòu)則在該波段表現(xiàn)出近似高反射的特性,且反射率都大于90%。(3)以雙介質(zhì)層的“三明治”紅外吸波結(jié)構(gòu)為研究對象,提出了基于駐波和磁諧振耦合機(jī)理的寬帶紅外吸波結(jié)構(gòu)設(shè)計(jì)方法,并制備出了在中心波長8.32μm處具有2.9μm吸收帶寬(吸收率大于80%)的熱控制寬帶紅外吸波結(jié)構(gòu)。這種方法對制備工藝要求簡單,并且能夠通過簡單地調(diào)整結(jié)構(gòu)參數(shù)來改變吸收峰的位置。(4)基于所設(shè)計(jì)的熱控制智能紅外吸波結(jié)構(gòu),制備了具有較高熱穩(wěn)定性和識別度的紅外“水印”,在VO2的相變過渡態(tài)中(61~71?C),圖形區(qū)域的輻射溫度差僅為1.4?C(44.1~45.5?C),其平均發(fā)射率的變化范圍為0.45~0.56;降溫過程中,圖形區(qū)域的輻射溫度差僅為0.4?C(42.6~43?C),平均發(fā)射率的變化范圍為0.4~0.51。而“水印”的非圖形區(qū)域在升溫和降溫過程中的輻射溫度變化范圍都為21.3~21.9?C,其平均發(fā)射率約為0.04。
[Abstract]:In recent years, infrared absorbing structure has become a research hotspot in the field of artificial electromagnetic supermaterial due to its unique electromagnetic resonance characteristics. At the same time, with the rapid development of phase change material, it has been widely used in infrared absorbing structure, which not only has the functional characteristics of artificial electromagnetic supermaterial, but also becomes more intelligent. Its research value and application prospect are more and more broad. In this paper, the classical "sandwich" absorbing structure of metal, dielectric and metal is studied, and the VO2 film with thermal phase transition property is used as the metal layer and the dielectric layer, respectively. The dispersion characteristics of the relative dielectric constant of VO2 thin films in different states are studied. Based on this, an intelligent infrared absorbing structure with thermal control characteristics is designed and its working mechanism is analyzed and verified. In this paper, the main innovations and related research results are as follows: 1) the dispersion characteristics of phase change VO2 films in metal, semiconductor, phase transition and composite states are investigated. Through nonlinear fitting and effective medium theory, the relative permittivity and dispersion characteristics of VO2 thin films in various states are obtained. It is considered that the dispersion model used is not only simple in fitting method, but also accurate in fitting results. It is also suitable for composite materials with composite phase or impurity phase. The VO2 film is used as the metal layer and the dielectric layer of the absorbing structure, respectively. A kind of "sandwich" infrared absorbing structure with the characteristics of thermally controlled wave absorption is designed. When the VO2 thin film is the bottom metal layer, the absorption structure has no obvious absorption peak at low temperature, and the reflectivity is greater than 40. At high temperature, there are standing wave absorption peaks and magnetic resonance absorption peaks at 3.2 渭 m and 7.5 渭 m, and when the VO2 thin film is the dielectric layer, At low temperature, there exists a strong broadband absorption peak at 9.9 渭 m, while at high temperature, the absorption structure exhibits the characteristic of approximately high reflectance. And the reflectivity is greater than 90. 3) taking the "sandwich" infrared absorbing structure of the double dielectric layer as the research object, a broadband infrared absorbing structure design method based on the mechanism of standing wave and magnetic resonance coupling is proposed. At the center wavelength of 8.32 渭 m, the thermal controlled broadband infrared absorption structure with 2.9 渭 m absorption bandwidth (absorptivity greater than 80) has been prepared. This method is simple for the preparation process, and can change the position of absorption peak by simply adjusting the structure parameters.) based on the designed thermal control intelligent infrared absorbing structure, Infrared "watermark" with high thermal stability and recognition has been prepared. In the transition state of VO2, the radiative temperature difference in the phase transition state of VO2 is only 1.4? C ~ (1) C ~ (1) ~ (4) ~ (4) ~ (4) ~ (5) ~ (5) C ~ (1), its average emissivity varies from 0.45 to 0.56, and during the cooling process, the average emissivity of the watermark is 0.45 ~ 0.56. The radiative temperature difference in the figure region is only 0.4C ~ (2 +) ~ (42.6m) ~ (43) C ~ (-1), and the average emissivity is in the range of 0.4 ~ 0.51C ~ (-1). However, the range of radiation temperature in the non-graphic region of "watermark" during heating and cooling is 21.3O21.9 C, and its average emissivity is about 0.04.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TB303

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