本文選題：TaN薄膜 + 玻璃釉　； 參考：《電子科技大學》2015年碩士論文

【摘要】：當今社會,星載、彈載系統(tǒng)中微波負載及器件的小型化和集成化是目前該領域的主要發(fā)展方向。在鐵氧體基片上通過光刻工藝和沉積薄膜技術來實現(xiàn)微波器件的集成化成為當前應用牽引的研究熱點。本論文基于這一背景,研究了基于鎳鋅鐵氧體基上制備Ta N薄膜并通過工藝調整、理論設計和器件制作來研究薄膜與集成器件的性能,并且通過在鎳鋅鐵氧體基片上設計涂覆CaO-Al2O3-SiO2玻璃釉來對基片進行表面處理,提高薄膜負載的功率密度,最后設計制備了微波集成隔離器,并對其性能進行了測試。第一,采用直流反應磁控濺射技術在鎳鋅鐵氧體基片上制備了TaN薄膜。通過研究濺射時間、氮氣分壓等工藝條件變化對TaN薄膜相結構、方塊電阻、電阻溫度系數(shù)等參數(shù)的影響,確定了最佳工藝參數(shù)范圍。背底真空度為7.8×10-5-8.85×10-5 Pa,濺射氣壓0.6-0.8 Pa,濺射Ar流量為50 sccm,N2流量為2 sccm,濺射功率45-50 W,濺射時間1000 s,所得的薄膜方阻為42-50Ω/□,電阻溫度系數(shù)TCR為50-61 ppm/℃,厚度約為350 nm。第二,鎳鋅鐵氧體基片表面大量孔洞的存在會影響TaN薄膜負載的散熱性能,不利于負載功率密度的提高。為改善這一性能,實驗設計研究了CaO-Al2O3-SiO2(CAS)玻璃釉,通過絲網印刷的方式在基片上涂覆一層玻璃釉,可有效改善基片表面平整性和散熱性能,有利于負載功率密度的提高。第三,利用HFSS軟件設計仿真和優(yōu)化了尺寸為10 mm×10 mm×0.5 mm的TaN薄膜微波負載的模型,負載在DC-20 GHz頻率范圍內電壓駐波比VSWR小于1.2,然后在鎳鋅鐵氧體基片上制備了Ta N薄膜負載。經測試,薄膜微波負載在DC-20 GHz頻率范圍內VSWR均小于1.5,回波損耗S11小于-10 dB,阻抗變化為42Ω-58Ω,功率密度僅為1 W/mm2左右。為提高微波負載的功率密度,實驗仿真制作了基于玻璃釉涂覆的鎳鋅鐵氧體基片的TaN薄膜微波負載,測試顯示負載功率密度提高到了2.5 W/mm2。第四,在TaN薄膜微波負載的基礎上設計仿真了微帶集成隔離器,在X波段8 GHz-12 GHz范圍內仿真的隔離器回波損耗和隔離度均高于-20 dB,插入損耗低于-0.8 dB。實驗制作的隔離器在X波段內回波損耗和隔離度均小于低于-14 dB,插入損耗低于 4 dB。制作的隔離器基本實現(xiàn)了隔離性能和集成化目標。
[Abstract]:Nowadays, miniaturization and integration of microwave loads and devices in spaceborne and missile-borne systems are the main development directions in this field. The integration of microwave devices by photolithography and thin film deposition on ferrite substrates has become a hot research area in recent years. Based on this background, the preparation of Ta N thin films on Ni-Zn ferrite substrates is studied in this paper. The properties of the films and integrated devices are studied by adjusting the process, designing the theory and fabricating the devices. The surface of the substrate was treated with CaO-Al2O3-SiO2 glass glaze to improve the power density of the film. Finally, the microwave integrated isolator was designed and fabricated, and its performance was tested. Firstly, TaN thin films were prepared on nickel zinc ferrite substrates by DC reactive magnetron sputtering. By studying the effects of sputtering time, nitrogen partial pressure and other technological conditions on the phase structure, block resistance and resistance temperature coefficient of TaN film, the optimum process parameters were determined. The vacuum of the film is 7.8 脳 10-5-8.85 脳 10-5 Pa. the sputtering pressure is 0.6-0.8 Pa. the sputtering ar flux is 50 sccm / n 2 flow rate is 2 sccm, the sputtering power is 45-50 W, the sputtering time is 1000 s, the square resistance of the film is 42-50 惟 / --, the resistance temperature coefficient TCR is 50-61 ppm/ 鈩，

本文編號：1804850