本文選題：金屬氧化物納米材料 + 微觀結(jié)構(gòu)　； 參考：《青島大學(xué)》2017年碩士論文

【摘要】：作為重要的功能材料,金屬氧化物納米半導(dǎo)體材料具有獨特的光、電、熱以及力學(xué)性能,在太陽能電池、催化劑、傳感器和磁存儲器中有著廣泛的應(yīng)用前景。材料的宏觀性能取決于其形貌和微觀結(jié)構(gòu),因此有必要對金屬氧化物納米半導(dǎo)體的性能與形貌和微觀結(jié)構(gòu)進(jìn)行關(guān)聯(lián)。本論文主要對金屬氧化物納米半導(dǎo)體材料的可控制備、微觀結(jié)構(gòu)和物理化學(xué)性能進(jìn)行了系統(tǒng)的研究。第一章首先對金屬氧化物納米半導(dǎo)體材料的制備方法、物理化學(xué)性能、應(yīng)用領(lǐng)域等方面進(jìn)行了綜述。此外,對納米半導(dǎo)體材料的光催化性能和濕敏性能的研究做了詳細(xì)的介紹。第二章利用真空加熱法還原氧化鐵納米刀片,成功地制備出含有氧空位、位錯以及孔洞等缺陷的還原氧化鐵納米刀片。在相同實驗條件下,還原后的氧化鐵納米刀片相比于氧化鐵粉末和納米刀片具有更高的光催化降解效率。缺陷的存在減少了氧化鐵納米刀片中電子-空穴對的復(fù)合,加速了有機(jī)物的分解,因此還原后的納米刀片的光催化性能得到大幅提升。第三章通過水熱法,成功地制備出不同形貌的二氧化錫納米結(jié)構(gòu),主要有三種形貌:納米顆粒、納米棒狀組成的三維結(jié)構(gòu)和納米十二面體組成的三維結(jié)構(gòu)。不同形貌二氧化錫納米結(jié)構(gòu)的濕敏性能研究表明,三維多級結(jié)構(gòu)二氧化錫納米十二面體具有響應(yīng)-恢復(fù)時間短、濕滯小、靈敏度高和穩(wěn)定性好等優(yōu)點。納米十二面體獨特的三維結(jié)構(gòu)以及暴露出高活性的{101}晶面顯著提升了其濕敏性能。第四章利用高分辨透射電子顯微鏡對氧化鐵納米線中兩種周期的調(diào)制結(jié)構(gòu)進(jìn)行研究。納米線中的調(diào)制結(jié)構(gòu)是由氧空位有序引起的,其周期分別為(30(?)0)晶面間距的10倍和(11(?)0)晶面間距的6倍。兩種調(diào)制結(jié)構(gòu)的納米線中鐵原子數(shù)與氧原子數(shù)之比分別為0.7407和0.7273,與四氧化三鐵的鐵和氧原子數(shù)之比(0.7500)非常接近。電子能量損失譜的研究表明,由于氧氣供應(yīng)不足,鐵原子數(shù)與氧原子數(shù)之比將趨近于四氧化三鐵的鐵、氧原子數(shù)之比,從而使氧化鐵納米線達(dá)到穩(wěn)定結(jié)構(gòu)。
[Abstract]:As important functional materials, metal oxide nano-semiconductor materials have unique optical, electrical, thermal and mechanical properties, and have a wide range of applications in solar cells, catalysts, sensors and magnetic memories. The macroscopic properties of the materials depend on their morphology and microstructure, so it is necessary to correlate the properties of metal oxide nano-semiconductors with their morphology and microstructure. In this paper, the controllable preparation, microstructure and physical and chemical properties of metal oxide nanocrystalline semiconductor materials are studied. In the first chapter, the preparation methods, physical and chemical properties and application fields of metal oxide nanocrystalline semiconductors are reviewed. In addition, the photocatalytic and hygroscopic properties of nanometer semiconductor materials are introduced in detail. In chapter 2, the reduction of iron oxide nanocrystalline blades containing oxygen vacancies, dislocations and voids was successfully prepared by using vacuum heating method to reduce iron oxide nanocrystalline inserts. Under the same experimental conditions, the photocatalytic degradation efficiency of the reduced iron oxide nano-blade is higher than that of the iron oxide powder and nano-blade. The defect reduces the combination of electron-hole pair and accelerates the decomposition of organic matter in the iron oxide nano-blade, so the photocatalytic performance of the reduced nano-blade is greatly improved. In chapter 3, tin dioxide nanostructures with different morphologies have been successfully prepared by hydrothermal method. There are three main morphologies: nanocrystalline particles, nanorods and nano-dodecahedrons. The study of humidity sensitivity of tin dioxide nanostructures with different morphologies shows that the three-dimensional multilevel tin dioxide nanododecahedrons have the advantages of short response-recovery time, low humidity lag, high sensitivity and good stability. The unique three-dimensional structure of the nano-dodecahedron and the exposure of highly active {101} crystal surface significantly improved its humidity sensitivity. In chapter 4, the modulation structures of two periods in iron oxide nanowires are studied by high resolution transmission electron microscope. The modulation structure of nanowires is caused by the order of oxygen vacancy. The periods of the modulation structure are 10 times and 6 times of the distance between the crystal plane and the crystal plane, respectively. The ratio of the number of iron atoms to the number of oxygen atoms in the two modulated nanowires is 0.7407 and 0.7273 respectively, which is very close to the ratio of iron atom to oxygen atom of iron trioxide (0.7500). The study of electron energy loss spectra shows that due to the shortage of oxygen supply, the ratio of the number of iron atoms to the number of oxygen atoms will be close to that of iron and oxygen atoms of iron trioxide, so that the structure of iron oxide nanowires will be stable.
【學(xué)位授予單位】：青島大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN304;TB383.1

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 牛俊杰,沙健,馬向陽,張輝,楊青,楊德仁;光電子領(lǐng)域中的納米半導(dǎo)體材料[J];材料導(dǎo)報;2002年11期

2 王占國;納米半導(dǎo)體材料及其納米器件研究進(jìn)展[J];半導(dǎo)體技術(shù);2001年03期

3 蘇碧桃;慕紅梅;左顯維;王克;董娜;佟永純;;不同形貌摻雜態(tài)聚苯胺納米半導(dǎo)體材料的界面法合成[J];西北師范大學(xué)學(xué)報(自然科學(xué)版);2008年03期

4 周科衍，閻圣剛，高占先，侯毓汾;Ⅱ－Ⅵ族納米半導(dǎo)體材料的研究（Ⅰ）苯基硒化鎘的合成及其熱分解[J];功能材料;1994年03期

5 徐金枝;王大期;;透明隔熱玻璃涂料的現(xiàn)狀及發(fā)展[J];綠色建筑;2010年06期

6 ;新發(fā)明[J];廣州化工;2011年11期

7 劉引烽,陳靜,桑文斌,華家棟,孟中巖;聚合物在納米半導(dǎo)體材料中的應(yīng)用[J];高分子通報;2002年05期

8 林德娟,沈水發(fā),陳耐生,黃金陵;納米半導(dǎo)體材料SO~_4(2-)/La-α-Fe_2O_3的表面結(jié)構(gòu)與酒敏特性[J];應(yīng)用化學(xué);2002年10期

9 張義華,郭新聞,王祥生,王學(xué)勤,周卓華;氣相沉積法分子篩封裝SnO_2納米半導(dǎo)體材料的研究[J];功能材料;1999年06期

10 施慶和;氧化物[J];化學(xué)世界;1959年10期

相關(guān)會議論文 前10條

1 李志鴻;曹昆;崔金;徐小寶;魯建峰;白杰;王鳴魁;;納米半導(dǎo)體材料內(nèi)部與界面電荷傳輸與復(fù)合的研究[A];中國化學(xué)會第28屆學(xué)術(shù)年會第11分會場摘要集[C];2012年

2 馬臻;任瑜;盧巖斌;Peter G.Bruce;;介孔過渡金屬氧化物催化脫除環(huán)境污染物[A];第六屆全國環(huán)境化學(xué)大會暨環(huán)境科學(xué)儀器與分析儀器展覽會摘要集[C];2011年

3 櫖恅i，

本文編號：1778260