本文選題：等離子束源 + 氫化非晶硅��； 參考：《壓電與聲光》2017年05期

【摘要】：采用等離子束源化學(xué)氣相沉積(CVD)設(shè)備制備氫化非晶硅薄膜。使用臺階儀、UV-Vis-NIR分光光度計(jì)、X線衍射儀(XRD)及掃描電子顯微鏡(SEM)等手段表征樣品。分析了該設(shè)備沉積的薄膜均勻度,并比較了本設(shè)備與普通電子束蒸發(fā)設(shè)備制備的薄膜表面形貌。實(shí)驗(yàn)結(jié)果表明,當(dāng)設(shè)備功率為300 W,硅烷/氫氣流量比為15∶10,設(shè)備腔室氣壓為7×10-5 MPa,上、下線圈電流比為6∶2時(shí),薄膜沉積速率最大。
[Abstract]:Hydrogenated amorphous silicon thin films were prepared by iso-ion beam chemical vapor deposition (CVD) equipment. The samples were characterized by means of step spectrometer UV-Vis-NIR spectrophotometer X-ray diffractometer (XRD) and scanning electron microscope (SEM). The uniformity of the films deposited by this equipment was analyzed, and the surface morphology of the films prepared by this equipment was compared with that prepared by the conventional electron beam evaporation equipment. The experimental results show that when the power of the equipment is 300 W, the flow ratio of silane to hydrogen is 15: 10, the pressure of the chamber is 7 脳 10 ~ (-5) MPa, and the current ratio of the upper and lower coils is 6:2, the deposition rate of the film is the highest.
【作者單位】： 上海交通大學(xué)電子信息與電氣工程學(xué)院;
【基金】：國家自然科學(xué)基金資助項(xiàng)目(61310306053)
【分類號】：TB383.2
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本文編號：1777918