本文選題：ZnO薄膜　切入點(diǎn)：緩沖層　出處：《燕山大學(xué)》2015年碩士論文

【摘要】：近年來(lái),氧化鋅(Zn O)薄膜由于材料廉價(jià)且豐富,化學(xué)穩(wěn)定性和熱穩(wěn)定性好,無(wú)毒且有優(yōu)異的光電性能而廣受關(guān)注。目前,在眾多Zn O薄膜的制備方法中,溶劑熱法因其制備簡(jiǎn)便,設(shè)備要求低,反應(yīng)溫度低,形貌可控等優(yōu)點(diǎn)而越來(lái)越受到人們的青睞。本文采用溶劑熱法在有緩沖層的玻璃基底上生長(zhǎng)Zn O薄膜,緩沖層原料用二水合乙酸鋅作溶劑,乙醇胺作穩(wěn)定劑,乙二醇甲醚作溶劑,生長(zhǎng)前驅(qū)液以六水合硝酸鋅作鋅源,六次亞甲基四胺或尿素提供OH-根,考查生長(zhǎng)時(shí)間、前驅(qū)液濃度和溫度等反應(yīng)參數(shù)對(duì)Zn O薄膜表面形貌及光學(xué)性能的影響,并優(yōu)化最佳反應(yīng)條件;同時(shí)在六次亞甲基四胺條件下,探索高溫?zé)崽幚淼木彌_層(Ⅰ緩沖層)對(duì)Zn O薄膜形貌及性能的影響,證明低溫下在各種柔性襯底上可制備出Zn O薄膜。嘗試降低體系溫度,用有機(jī)緩沖層替換Zn O緩沖層制備Zn O薄膜。樣品通過(guò)X射線衍射儀(XRD)、熒光光譜儀、紫外-可見(jiàn)分光光度計(jì)(UV-Vis)、掃描電子顯微鏡(SEM)等測(cè)試手段進(jìn)行表征。由實(shí)驗(yàn)結(jié)果可知,所得薄膜均為纖鋅礦結(jié)構(gòu)Zn O。六次亞甲基四胺體系下得到c軸擇優(yōu)生長(zhǎng)的Zn O薄膜,生長(zhǎng)時(shí)間為9 h,溫度為90℃,前驅(qū)液濃度為0.065 mol/L是最佳的制備條件,此時(shí)結(jié)晶度最好,透過(guò)率也較大,形貌為六角納米棒,長(zhǎng)徑比最大,達(dá)到16。同時(shí)成功在未高溫?zé)崽幚淼木彌_層(Ⅱ緩沖層)上制備出Zn O薄膜,得到納米片及納米片堆疊成的棒狀等結(jié)構(gòu)。在柔性襯底上也制備出Zn O薄膜,形貌包括棒狀、鉛筆狀、筆筒狀和管狀。在尿素體系下得到的Zn O為多孔納米片狀,樣品的比表面積很大,甲基橙的光催化降解說(shuō)明隨著Zn O生長(zhǎng)溫度增加和前驅(qū)液濃度增大,降解率減小。
[Abstract]:In recent years, zinc oxide (ZnO) thin films have attracted much attention due to their cheap and abundant materials, good chemical stability and thermal stability, non-toxic and excellent optoelectronic properties.At present, solvothermal method is more and more popular among the preparation methods of Zno thin films because of its simple preparation, low equipment requirements, low reaction temperature, controllable morphology and so on.In this paper, ZnO thin films were grown on glass substrates with buffer layer by solvothermal method. The raw material of buffer layer was zinc acetate dihydrate as solvent, ethanolamine as stabilizer, ethylene glycol methyl ether as solvent, zinc nitrate hexahydrate as source, and zinc nitrate hexahydrate as source.The effects of reaction parameters such as growth time, precursor concentration and temperature on the surface morphology and optical properties of ZnO films were investigated, and the optimum reaction conditions were optimized.The effect of buffer layer (鈪，

本文編號(hào)：1711494