本文選題：聚甲基丙烯酸甲酯(PMMA)　切入點(diǎn)：有機(jī)柵介質(zhì)　出處：《大連理工大學(xué)》2015年碩士論文

【摘要】：隨著微電子技術(shù)的高速發(fā)展,各個(gè)領(lǐng)域的微電子器件對(duì)材料的性能要求也不斷提高,有機(jī)薄膜晶體管(OTFT)作為一種新興的微電子器件,以其低廉的成本和良好的性能擁有巨大的市場(chǎng)價(jià)值。對(duì)于OTFT,影響器件性能的不僅是半導(dǎo)體材料,作為介質(zhì)層的絕緣材料的作用也是非常重要的。與無(wú)機(jī)絕緣材料相比,低生產(chǎn)成本而且更適合柔性襯底的有機(jī)絕緣材料更適用于新一代平板顯示中。聚甲基丙烯酸甲酯(PMMA)就是能夠應(yīng)用于OTFT生產(chǎn)的絕緣透明薄膜材料之一本文基于金屬-氧化層-半導(dǎo)體(MOS)結(jié)構(gòu)基本特性來(lái)研究PMMA薄膜的電學(xué)特性,采用旋涂的方法分別在N型硅和ITO玻璃襯底上制備一層聚甲基丙烯酸甲酯(PMMA),分別制備成金屬-絕緣層-半導(dǎo)體結(jié)構(gòu)(MIS)和金屬-絕緣層-導(dǎo)電薄膜結(jié)構(gòu)(MIM)。通過(guò)X射線衍射譜驗(yàn)證了PMMA的無(wú)定型非晶本質(zhì)；由金相顯微鏡觀察PMMA薄膜表面形貌,發(fā)現(xiàn)熱退火會(huì)對(duì)其有一定的影響；分別對(duì)兩種結(jié)構(gòu)進(jìn)行了電容-電壓(C-V)測(cè)試和電流-電壓(I-V)測(cè)試,研究PMMA薄膜的介電特性和擊穿場(chǎng)強(qiáng),得到與二氧化硅接近的相對(duì)介電常數(shù)(3.99)；隨著C-V測(cè)量頻率由5KHz升到2MHz,PMMA相對(duì)介電常數(shù)在不斷減��；由于襯底表面質(zhì)量的不同,基于MIS結(jié)構(gòu)測(cè)得擊穿場(chǎng)強(qiáng)為3.2MV/cm,而由MIM結(jié)構(gòu)得到的為5.8 MV/cm。由紫外可見(jiàn)吸收光譜儀得到PMMA/ITO玻璃結(jié)構(gòu)的透射率可到80%以上,PMMA薄膜對(duì)350nm-500nm范圍的光具有增透作用。
[Abstract]:With the rapid development of microelectronic technology, the performance requirements of microelectronic devices in various fields have been improved. Organic thin film transistor (OTFT) is a new kind of microelectronic devices.With its low cost and good performance has huge market value.For OTFT, it is not only the semiconductor material that affects the performance of the device, but also the function of the insulating material as the dielectric layer.Compared with inorganic insulating materials, organic insulating materials with low production cost and more suitable for flexible substrates are more suitable for the new generation flat panel display.Poly (methyl methacrylate) (PMMA) is one of the insulating and transparent thin film materials which can be used in OTFT production. In this paper, the electrical properties of PMMA thin films are studied based on the basic structural characteristics of metal-oxidation-semiconductor MOSs.A layer of polymethyl methacrylate (PMMA) was prepared on N-type silicon and ITO glass substrates by spin-coating method, and the metal-insulation-semiconductor structure and metal-insulation-conductive thin film structure were prepared respectively.The amorphous nature of PMMA was verified by X-ray diffraction, and the surface morphology of PMMA film was observed by metallographic microscope, and it was found that thermal annealing had a certain effect on it.The dielectric properties and breakdown field strength of PMMA thin films were investigated by capacitance-voltage C-V (C-V) and current-voltage I-V (I-V) measurements, respectively.The transmittance of PMMA/ITO glass structure was obtained by UV-Vis absorption spectrometer, and the transmittance of the glass structure can reach more than 80%, which has antireflection effect on the light in the range of 350nm-500nm.
【學(xué)位授予單位】：大連理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 湯慶鑫;李榮金;汪海風(fēng);李洪祥;胡文平;;小分子場(chǎng)效應(yīng)晶體管[J];化學(xué)進(jìn)展;2006年11期

相關(guān)碩士學(xué)位論文 前1條

1 黃金英;絕緣層對(duì)有機(jī)薄膜晶體管性能影響的研究[D];北京交通大學(xué);2008年

，

本文編號(hào)：1706761