本文選題：硅片　切入點(diǎn)：表面織構(gòu)　出處：《北京理工大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著微納機(jī)械器件結(jié)構(gòu)尺寸的微型化，導(dǎo)致表面積與體積之比增大，表面效應(yīng)明顯增強(qiáng)，由此帶來嚴(yán)重的粘著、摩擦和磨損問題，影響了器件的工作性能和使用壽命，阻礙了微納機(jī)電系統(tǒng)(MEMS/NEMS)的發(fā)展和應(yīng)用。對(duì)MEMS/NEMS表面進(jìn)行織構(gòu)化處理，是解決這一問題的有效途徑。為此，本文通過試驗(yàn)對(duì)微納尺度下織構(gòu)化硅片表面的摩擦學(xué)行為進(jìn)行了研究。本文主要工作和結(jié)論如下： 通過光學(xué)光刻和電感耦合等離子體刻蝕技術(shù)在單晶硅(100)晶面上進(jìn)行了柱狀織構(gòu)的構(gòu)筑，，分別使用掃描電子顯微鏡和原子力顯微鏡對(duì)織構(gòu)化硅片表面進(jìn)行了形貌表征。觀測(cè)結(jié)果表明：在硅片表面上形成了較為規(guī)則的圓柱陣列。當(dāng)相鄰織構(gòu)間的距離保持不變，而直徑逐漸增大時(shí)，織構(gòu)覆蓋率及表面均方根粗糙度均隨之增大。 使用配備有膠狀探針的原子力顯微鏡進(jìn)行了粘著試驗(yàn)，分別在室溫下的大氣和去離子水環(huán)境中對(duì)粘著力進(jìn)行了測(cè)量，考察了柱狀織構(gòu)對(duì)硅片表面粘著行為產(chǎn)生的影響。測(cè)量結(jié)果表明：柱狀織構(gòu)起到了顯著的減粘作用，同時(shí)降低了范德華力和毛細(xì)力的大小。當(dāng)間距一定時(shí)，具有較小直徑的織構(gòu)面更有利于粘著力的減小。另外，毛細(xì)力對(duì)表面粘著力的貢獻(xiàn)處于重要地位。 使用膠狀探針在原子力顯微鏡下進(jìn)行了摩擦試驗(yàn)，研究了織構(gòu)化硅片表面的摩擦行為。試驗(yàn)結(jié)果表明：柱狀織構(gòu)減小了探針與硅片表面之間的滑動(dòng)摩擦力。同樣地，當(dāng)織構(gòu)的間距一定時(shí)，直徑越小表面上的摩擦力也越小。此外，通過改變?cè)囼?yàn)中的載荷和滑動(dòng)速度還發(fā)現(xiàn)：織構(gòu)化表面上的摩擦力隨著載荷以及滑動(dòng)速度的增大而增大，而相對(duì)摩擦系數(shù)隨著載荷的增大而降低。 使用原子力顯微鏡測(cè)量硅片表面形貌，對(duì)多尺度特性進(jìn)行了研究，并建立了粗糙表面接觸的多尺度模型，探究了表面間的真實(shí)接觸面積與尺度數(shù)之間的關(guān)系。計(jì)算結(jié)果表明：當(dāng)尺度越來越小時(shí)，越來越多更小尺度下的粗糙峰開始出現(xiàn)，表面間的真實(shí)接觸面積隨著尺度數(shù)的增加而不斷減小。
[Abstract]:With the miniaturization of the structural dimensions of micro / nano mechanical devices, the ratio of surface area to volume is increased, and the surface effect is obviously enhanced. As a result, serious problems of adhesion, friction and wear are brought about, which affect the working performance and service life of the devices. This hinders the development and application of MEMS / NEMS. Texturing the surface of MEMS/NEMS is an effective way to solve this problem. In this paper, the tribological behavior of textured silicon wafers at micro- and nanoscale scale has been studied by experiments. The main work and conclusions are as follows:. By means of optical lithography and inductively coupled plasma etching technique, the columnar texture was constructed on the crystal plane of monocrystalline silicon (100). The morphology of textured silicon wafers was characterized by scanning electron microscope (SEM) and atomic force microscope (AFM). The results show that a regular cylindrical array is formed on the wafer surface, and the distance between adjacent textures remains constant. As the diameter increases, the texture coverage and RMS roughness increase. Adhesion tests were carried out using an atomic force microscope equipped with a colloidal probe, and the adhesion was measured in atmospheric and deionized water environments at room temperature, respectively. The effect of columnar texture on the adhesion behavior of silicon wafer surface is investigated. The results show that the columnar texture plays a significant role in reducing the viscosity and decreasing the van der Waals force and the capillary force. In addition, the contribution of capillary force to surface adhesion is important. The friction behavior of textured silicon wafer surface was studied by using a colloidal probe under atomic force microscope. The results show that the cylindrical texture reduces the sliding friction force between the probe and the wafer surface. When the spacing of texture is constant, the friction force on the surface of the smaller the diameter is also smaller. In addition, by changing the load and sliding velocity in the experiment, it is found that the friction force on the texture surface increases with the increase of the load and the sliding velocity. The relative friction coefficient decreases with the increase of load. The surface morphology of silicon wafer was measured by atomic force microscope (AFM) and the multi-scale model of rough surface contact was established. The relationship between the real contact area between surfaces and the number of scales is investigated. The results show that as the scale becomes smaller and smaller, more and more rough peaks begin to appear. The true contact area between surfaces decreases with the increase of the number of scales.
【學(xué)位授予單位】：北京理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB306;TN304.12

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 宋登元,王小平;光學(xué)光刻技術(shù)的研究進(jìn)展[J];半導(dǎo)體技術(shù);1998年02期

2 陳寶欽;趙珉;吳璇;牛潔斌;劉鍵;任黎明;王琴;朱效立;徐秋霞;謝常青;劉明;;電子束光刻在納米加工及器件制備中的應(yīng)用[J];微納電子技術(shù);2008年12期

3 趙文杰;曾志翔;王立平;陳建敏;薛群基;;規(guī)則織構(gòu)化硅片表面的制備及其潤(rùn)濕行為[J];中國(guó)表面工程;2011年03期

4 李新;唐禎安;徐軍;鮑海飛;;DLC膜用于解決MEMS黏附問題研究[J];大連理工大學(xué)學(xué)報(bào);2006年03期

5 紀(jì)敬虎;符永宏;華�？�;符昊;康正陽(yáng);;45鋼表面制備V形凹槽及其摩擦學(xué)特性[J];中國(guó)表面工程;2014年04期

6 田輝;楊泰生;陳玉清;;SiO_2超疏水薄膜的制備和性能表征[J];化工進(jìn)展;2008年09期

7 李群慶;張立輝;陳墨;范守善;;納米級(jí)電子束光刻技術(shù)及ICP深刻蝕工藝技術(shù)的研究[J];中國(guó)科學(xué)(E輯:技術(shù)科學(xué));2009年06期

8 余家欣;錢林茂;;一種改進(jìn)的原子力顯微鏡摩擦力標(biāo)定方法[J];摩擦學(xué)學(xué)報(bào);2007年05期

9 張曉亮;鐘小華;易戈文;賈均紅;;Au納米顆粒織構(gòu)化表面的黏著和摩擦學(xué)行為研究[J];摩擦學(xué)學(xué)報(bào);2010年06期

10 馬晨波;朱華;張文謙;姬翠翠;;往復(fù)條件下織構(gòu)表面的摩擦學(xué)性能研究[J];摩擦學(xué)學(xué)報(bào);2011年01期

本文編號(hào)：1651084