本文選題：化學氣相沉積　切入點：化學氣相輸運　出處：《中國科學技術(shù)大學》2017年碩士論文　論文類型：學位論文

【摘要】：由于在電學、光學、機械以及催化方面具有優(yōu)異的性能,二維材料近年來受到了廣泛的關(guān)注,其中高質(zhì)量二維材料的可控生長是實現(xiàn)其眾多潛在應用的基礎�；瘜W氣法是當前國際上普遍使用的快速低成本的納米材料合成方法。本論文選取化學氣相沉積(Chemical Vapor Deposition,CVD)和化學氣相輸運(Chemical Vapor Transport,CVT)為合成手段,初步探索了以石墨烯和三元FePS3為代表的層狀二維材料的化學氣相可控合成、性能表征及其催化應用研究,主要內(nèi)容包括以下兩個方面:1.高質(zhì)量石墨烯的CVD生長及其電輸運性能的研究:對比傳統(tǒng)的銅和銅鎳基底,我們設計了一種新型的三元Cu2NiZn合金基底,通過低壓CVD手段,利用液態(tài)環(huán)己烷(C6H6)在合金基底上成功地生長出具有優(yōu)異電學性能的大面積單層石墨烯,并結(jié)合密度泛函理論計算解釋了合金生長機制:選取甲烷(CH4)為氣態(tài)碳源,我們通過常壓CVD手段,在傳統(tǒng)的銅基底上可控地生長出不同尺寸的石墨烯,并利用掃描隧道顯微鏡研究了晶界對其電學性能的影響,初步建立了電學性能和石墨烯尺寸之間的聯(lián)系。2.高質(zhì)量三元FePS3單晶的CVT生長及其OER性能的研究:利用CVT方法,通過調(diào)控Fe、P、S的單質(zhì)的化學計量比以及生長溫差、時間,我們成功地獲得了具有高度結(jié)晶性的FePS3單晶,并利用后續(xù)球磨工藝將其剝離成具有優(yōu)異電催化產(chǎn)氧性能(OER)的寡層FePS3納米片。結(jié)合第一性原理計算,我們發(fā)現(xiàn)球磨前后FePS3的費米面附近的態(tài)密度發(fā)生了很大的變化,球磨過程中產(chǎn)生了很多空穴,有利于催化活性位點的充分暴露,從而解釋了其電化學產(chǎn)氧效率提高的原因。
[Abstract]:Due to their excellent electrical, optical, mechanical and catalytic properties, two-dimensional materials have attracted extensive attention in recent years. The controllable growth of high quality two-dimensional materials is the basis of its many potential applications. Chemical gas method is a fast and low cost synthesis method of nanomaterials widely used in the world. Chemical vapor deposition (CVD) is selected in this paper. Chemical Vapor Transport (Vapor) and Chemical Vapor Transport (CVI). The chemical vapor controlled synthesis, performance characterization and catalytic application of layered two-dimensional materials, represented by graphene and ternary FePS3, were preliminarily explored. The main contents include the following two aspects: 1. Study on CVD growth and electrical transport properties of high quality graphene: a novel ternary Cu2NiZn alloy substrate was designed by low pressure CVD for copper and copper nickel substrates. A large area graphene monolayer with excellent electrical properties was successfully grown on the alloy substrate by liquid cyclohexane C6H6. The growth mechanism of the alloy was explained by density functional theory (DFT). The methane CH4 was selected as the gaseous carbon source. Graphene of different sizes was grown on conventional copper substrates by atmospheric pressure CVD, and the effect of grain boundary on its electrical properties was studied by scanning tunneling microscope (SEM). The relationship between electrical properties and graphene size was preliminarily established. 2. The CVT growth and OER properties of high quality ternary FePS3 single crystals were studied. By means of CVT method, the stoichiometric ratio, growth temperature difference and time of growth were regulated. We have successfully obtained highly crystallized FePS3 single crystals, and have been peeled off into oligodeoxygen-rich FePS3 nanocrystals with excellent electrocatalytic oxygen-producing properties by means of the following ball milling process. We found that the density of states near Fermi surface of FePS3 changed greatly before and after ball milling, and a lot of holes were produced in the milling process, which was beneficial to the full exposure of catalytic active sites, which explained the reason for the increase of electrochemical oxygen production efficiency.
【學位授予單位】：中國科學技術(shù)大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TB30

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